ADVANCED APT8065BVR POWER TECHNOLOGY 800V 13A 0.6500 me) id =n Oso aa Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching * 100% Avalanche Tested Lower Leakage * Popular TO-247 Package G i) MAXIMUM RATINGS All Ratings: Tg = 25C unless otherwise specified. Symbol | Parameter APT8065BVR UNIT Voss Drain-Source Voltage 800 Volts Ib Continuous Drain Current @ Tg = 25C 13 @) Amps lom Pulsed Drain Current 52 Vas Gate-Source Voltage Continuous +30 Vol olts Vesm Gate-Source Voltage Transient +40 p Total Power Dissipation @ Tc, = 25C 280 Watts p Linear Derating Factor 2.24 wc TT stg | Operating and Storage Junction Temperature Range -55 to 150 C Ty, Lead Temperature: 0.063" from Case for 10 Sec. 300 laR Avalanche Current (Repetitive and Non-Repetitive) 13 Amps Ear Repetitive Avalanche Energy O 30 J m Eas Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT BVgg | Drain-Source Breakdown Voltage (V,. = OV, |, = 250A) 800 Volts lb(on) On State Drain Current @ (Vig > | (on) X Rosion) Max, Vas = 10V) 13 Amps Roscon) Drain-Source On-State Resistance @ (Vos = 10V, 0.5 | prcont?) 0.65 Ohms Zero Gate Voltage Drain Current (Vos = Vase? Vos = 0V) 95 Dss - = HA Zero Gate Voltage Drain Current (V). = 0.8 Vigg,s Vag = OV, T, = 125C) 250 lass Gate-Source Leakage Current (Vos = +30V, Vos = 0V) +100 nA Vesith) Gate Threshold Voltage (Vig = Vas? Ly = 1.0mA) 2 4 Volts Was CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA ( APT Website - http:/www.advancedpower.com } 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadra Nord F-33700 Merignac - France Phone: (33) 557921515 FAX: (33) 5 56 47 97 61 050-5571 Rev B 050-5571 Rev B DYNAMIC CHARACTERISTICS APT8065BVR Symbol | Characteristic Test Conditions MIN TYP MAX UNIT Co. Input Capacitance Vg = OV 3050 | 3700 Cos, | Output Capacitance Vog = 25V 300 420 pF C., | Reverse Transfer Capacitance f= 1 MHz 150 225 Q, Total Gate Charge Vag = 10V 150 225 Qs Gate-Source Charge Vop = 9-5 Vigs 17 25 nc Qo Gate-Drain ("Miller") Charge lb = loicont] @ 25C 70 105 ton) | Turn-on Delay Time Veg = 15V 12 24 t Rise Time Vop = 9-5 Voss 1 22 ; l= @ 25C ns tyoty | Turn-off Delay Time b= 'piCont] 60 90 t, Fall Time Rg = 1.62 42 24 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT Is Continuous Source Current (Body Diode) 13 A mps lon Pulsed Source Current (Body Diode) 52 P Vsp Diode Forward Voltage @ (Vag = OV, Is = lotcont) 1.3 Volts t. Reverse Recovery Time (I, = lorconty dl/dt = 100A/us) 650 ns tr Reverse Recovery Charge (I, = lorcontp dl./dt = 100A/ps) 9 uC THERMAL CHARACTERISTICS Symbol | Characteristic MIN TYP MAX UNIT Rojc | Junction to Case 0.45 CAN Roja | Junction to Ambient 40 @ Repetitive Rating: Pulse width limited by maximum junction Pp 9g y J temperature. Pulse Test: Pulse width < 380 nS, Duty Cycle < 2% @ See MIL-STD-750 Method 3471 @ Starting T= +25C, L = 14.32mH, Rg = 259, Peak I, = 13A APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 = l 0.1 o Zz <= 0.05 a Ww a = ol S 2 0.01 lu ~= 0.005 SINGLE PULSE & 3 N 0.001 10% 10-4 108 betp | Duty Factor D = itp Peak Ty =Ppm x Zocot+Teo 102 107 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT8065BVR Vagg=5V, 5.5V, 6V, 7V, 10V & 15V 16 Ip DRAIN CURRENT (AMPERES) 0 100 200 300 400 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 30 Ty = -55C a Vps> Ip (ON) x Rpg (ON)MAX. i 24 250nSEC. PULSE TEST Ww @ <0.5% DUTY CYCLE a = < ~ 18 Zz uw oc oc 3 12 oO z Fg Ty =4125C a 6 a Ty = 425C Ty = -55C 0 0 2 4 6 8 Vag GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 14 oO 12 uw oc ac 10 = x 5 8 uw c 6 oO z = 4 oc a 3 2 0 25 50 75 100 125 150 Tg, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 Ip = 05 |, [Cont] Veg = 10V 2.0 1.5 1.0 0.5 Ryg(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0.0 0 -25 O 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 16 TV, 10V & 15V a Ww i 12 Vag=5V & 5.5V ao | = z 4.5V kK i a 8 oc 2 oO Zz f 4 a 7 0 0 2 4 6 8 10 12 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.3 NORMALIZED TO Veg = 10V @ 05 Ip [Cont] to o Rpg(ON), DRAIN-TO-SOURCE ON RESISTANCE 2 ~o 5 10 15 20 Ip, DRAIN CURRENT (AMPERES) FIGURE 5, R,,(ON) vs DRAIN CURRENT a ua on 1.05 1.00 0.95 BV gg, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.90 0 -25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 a ua 1.0 0.9 0.8 0.7 Veg(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.6 0 -25 0 25 50 75 100 125 150 Tg, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5571 Rev B 050-5571 Rev B APT8065BVR 60 15,000 sous 10,000 a OPERATION or LIMITED BY Rog 5.000 lu c , S 10 5 <x 5 1ms Hi 5 Zz 2 < W EF cc 10ms 2 1,000 o 1 < z S500 bs 5 HT =+25C 100mS O a Ty =+150C pc 4 SINGLE PU Crss A 100 1 5 10 50 100 800 04 ad 1 10 50 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE ~ 20 a 50 @ Ip = lp [Cont] wo ; i g Vpg=100V c tu 16 = Ty =+150C Ty =+25C g Vpg=250V = 10 A Vpg=400V i 5 Oo 12 oa > a Da O 3 x Zz g e fy a Oo Bos Lu 4 rc EB Ww s a o cr nO a oO o > 0 a 1 0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1.0 1.2 Qg, TOTAL GATE CHARGE (nC) Vp SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247 Package Outline 4.69 (.185) na 5.31 (.209) < 15.49 (.610) 5) 1.49 (.059) 16.26 (.640) mK | 2.49 (.098) v 7 A 5.38 (.212 6.15 (.242) BSC 620 (544) 20.80 (.819) rs 21.46 (845) a 1 3.50 (.138) i 3.81 (.150) v Y A 4.50 (.177) Max. < 342 C123) R 1.65 (.065) 0.40 (.016) |< > <_ 0.79 (.031) 19.81 (.780) 2.13 (.084) 20.32 (800) Ul 1.01 (.040) | Gate 1.40 (.055 | ( ) -~ Drain i = Source L Y 2.21 (.087) +>! kk 5% (102) 5.45 (.215) BSC |< 2-Ples. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058