Logic Controlled,
High-Side Power Switches
Data Sheet
ADP190/ADP191
Rev. E Document Feedback
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FEATURES
Low RDSON of 105 mΩ at 1.8 V
Internal output discharge resistor (ADP191)
Turn-on slew rate limiting (ADP191)
Low input voltage range: 1.1 V to 3.6 V
500 mA continuous operating current
Built-in level shift for control logic that can be operated
by 1.2 V logic
Low 2 μA (maximum) ground current
Ultralow shutdown current: <1 μA
Ultrasmall 0.8 mm × 0.8 mm, 4-ball, 0.4 mm pitch WLCSP
APPLICATIONS
Mobile phones
Digital cameras and audio devices
Portable and battery-powered equipment
TYPICAL APPLICATIONS CIRCUIT
GND
EN
+
–
LOAD
VIN VOUT
ADP190
LEVEL SHIFT
AND SLE W
RATE CONT ROL
OFF
ON
07874-001
Figure 1.
GND
EN
+
–
LOAD
VIN VOUT
ADP191
LEVEL SHIFT
AND SLE W
RATE CONT ROL
AND LO AD
DISCHARGE
OFF
ON
07874-102
Figure 2.
GENERAL DESCRIPTION
The ADP190/ADP191 are high-side load switches designed for
operation from 1.1 V to 3.6 V. These load switchs provide power
domain isolation for extended power battery life. The devices
contain a low on-resistance P-channel MOSFET that supports
more than 500 mA of continuous current and minimizes power
loss. The low 2 μA (maximum) of ground current and ultralow
shutdown current make the ADP190/ADP191 ideal for battery-
operated portable equipment. The built-in level shifter for enable
logic makes the ADP190/ADP191 compatible with modern
processors and GPIO controllers.
The ADP191 controls the turn-on slew rate of the switch to
reduce the input inrush current. The ADP191 also incorporates
an internal output discharge resistor to discharge the output
capacitance when the ADP191 output is disabled.
Beyond operating performance, the ADP190/ADP191 occupy
minimal printed circuit board (PCB) space with an area less than
0.64 mm2 and a height of 0.60 mm. It is available in an ultrasmall
0.8 mm × 0.8 mm, 4-ball, 0.4 mm pitch W L C S P.
ADP190/ADP191 Data Sheet
Rev. E | Page 2 of 16
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Typical Applications Circuit ............................................................ 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Timing Diagram ........................................................................... 4
Absolute Maximum Ratings ............................................................ 5
Thermal Data ................................................................................ 5
Thermal Resistance ...................................................................... 5
ESD Caution .................................................................................. 5
Pin Configuration and Function Descriptions ..............................6
Typical Performance Characteristics ..............................................7
Theory of Operation .........................................................................9
Applications Information .............................................................. 10
Ground Current .......................................................................... 10
Enable Feature ............................................................................ 10
Timing.......................................................................................... 10
Thermal Considerations ............................................................ 12
PCB Layout Considerations ...................................................... 14
Outline Dimensions ....................................................................... 15
Ordering Guide .......................................................................... 15
REVISION HISTORY
2/13—Rev. D to Rev. E
Changes to Logic High Voltage Parameter, Table 1 ..................... 3
Updated Outline Dimensions ....................................................... 15
11/10—Rev. C to Rev. D
Changed 4 mΩ to 4 MΩ in Theory of Operation Section .......... 9
3/10—Rev. B to Rev. C
Change to Low Input Voltage Range Value ................ Throughout
1/10—Rev. A to Rev. B
Added ADP191 .............................................................. Throughout
Changes to Table 1 ............................................................................. 3
Changes to Table 3 ............................................................................. 5
Changes to Ordering Guide .......................................................... 15
9/09—Rev. 0 to Rev. A
Changes to Ordering Guide .......................................................... 13
1/09—Revision 0: Initial Version
Data Sheet ADP190/ADP191
Rev. E | Page 3 of 16
SPECIFICATIONS
VIN = 1.8 V, VEN = VIN, ILOAD = 200 mA, TA = 25°C, unless otherwise noted.
Table 1. ADP190
Parameter Symbol Test Conditions Min Typ Max Unit
INPUT VOLTAGE RANGE VIN TJ = −40°C to +85°C 1.1 3.6 V
EN INPUT
EN Input Threshold VEN_TH 1.1 V ≤ VIN ≤ 1.3 V, TJ = −40°C to +85°C 0.3 1.0 V
1.3 V < VIN < 1.8 V, TJ = −40°C to +85°C 0.4 1.2 V
1.8 V ≤ VIN ≤ 3.6 V, TJ = −40°C to +85°C 0.45 1.2 V
Logic High Voltage VIH 1.1 V ≤ VIN ≤ 1.3 V 1.0 V
1.3 V < VIN ≤ 3.6 V 1.2
Logic Low Voltage VIL 1.1 V ≤ VIN ≤ 3.6 V 0.3 V
EN Input Pull-Down Resistance REN 4 MΩ
CURRENT
Ground Current1 IGND VIN = 3.6 V, VOUT open, TJ = −40°C to +85°C 2 µA
Shutdown Current IOFF EN = GND 0.1 µA
EN = GND, TJ = −40°C to +85°C 2 µA
VIN to VOUT RESISTANCE RDSON
VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V 80 mΩ
VIN = 2.5 V, ILOAD = 200 mA, EN = 1.5 V 90 mΩ
VIN = 1.8 V, ILOAD = 200 mA, EN = 1.5 V 105 130 mΩ
VIN = 1.5 V, ILOAD = 200 mA, EN = 1.5 V 125 mΩ
VIN = 1.2 V, ILOAD = 200 mA, EN = 1 V 160 mΩ
VOUT TIME
Turn-On Delay Time tON_DLY ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 μF 5 μs
Turn-On Delay Time tON_DLY VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 μF 1.5 μs
1 Ground current includes EN pull-down current.
Table 2. ADP191
Parameter Symbol Test Conditions Min Typ Max Unit
INPUT VOLTAGE RANGE VIN TJ = −40°C to +85°C 1.1 3.6 V
EN INPUT
EN Input Threshold VEN_TH 1.1 V ≤ VIN ≤ 1.3 V, TJ = −40°C to +85°C 0.3 1.0 V
1.3 V < VIN < 1.8 V, TJ = −40°C to +85°C 0.4 1.2 V
1.8 V ≤ VIN ≤ 3.6 V, TJ = −40°C to +85°C 0.45 1.2 V
Logic High Voltage VIH 1.1 V ≤ VIN ≤ 3.6 V 1.1 V
Logic Low Voltage VIL 1.1 V ≤ VIN ≤ 3.6 V 0.3 V
EN Input Pull-Down Resistance
R
EN
4
MΩ
CURRENT
Ground Current1 IGND VIN = 3.6 V, VOUT open, TJ = −40°C to +85°C 2 µA
Shutdown Current IOFF EN = GND 0.1 µA
EN = GND, TJ = −40°C to +85°C 2 µA
VIN to VOUT RESISTANCE RDSON
VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V 80 mΩ
VIN = 2.5 V, ILOAD = 200 mA, EN = 1.5 V 90 mΩ
VIN = 1.8 V, ILOAD = 200 mA, EN = 1.5 V 105 130 mΩ
VIN = 1.5 V, ILOAD = 200 mA, EN = 1.5 V 125 mΩ
VIN = 1.2 V, ILOAD = 200 mA, EN = 1 V 160 mΩ
VOUT DISCHARGE RESISTANCE RDIS 215 Ω
VOUT TIME
Turn-On Delay Time tON_DLY ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 μF 80 μs
Turn-On Delay Time tON_DLY VIN = 3.6 V, ILOAD = 200 mA, EN = 1.5 V, CLOAD = 1 μF 50 μs
1 Ground current includes EN pull-down current.
ADP190/ADP191 Data Sheet
Rev. E | Page 4 of 16
TIMING DIAGRAM
V
EN
V
OUT
TURN-ON
RISE
90%
10%
TURN-OFF
DELAY
TURN-OFF
FALL
TURN-ON
DELAY
07874-003
Figure 3. Timing Diagram
Data Sheet ADP190/ADP191
Rev. E | Page 5 of 16
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
VIN to GND Pins −0.3 V to +4.0 V
VOUT to GND Pins −0.3 V to VIN
EN to GND Pins −0.3 V to +4.0 V
Continuous Drain Current
TA = 25°C ±1 A
TA = 85°C ±500 mA
Continuous Diode Current −50 mA
Storage Temperature Range
−65°C to +150°C
Operating Junction Temperature Range −40°C to +125°C
Soldering Conditions JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination. The ADP190/ADP191 can be damaged when the
junction temperature limits are exceeded. Monitoring ambient
temperature does not guarantee that TJ is within the specified
temperature limits. In applications with high power dissipation
and poor PCB thermal resistance, the maximum ambient
temperature may need to be derated.
In applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (TJ) of
the device is dependent on the ambient temperature (TA), the
power dissipation of the device (PD), and the junction-to-ambient
thermal resistance of the package (θJA).
Maximum junction temperature (TJ) is calculated from the
ambient temperature (TA) and power dissipation (PD) using the
formula
TJ = TA + (PD × θJA)
Junction-to-ambient thermal resistance (θJA) of the package is
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent on
the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θJA may vary, depending on
PCB material, layout, and environmental conditions. The speci-
fied values of θJA are based on a 4-layer, 4 inch × 3 inch PCB.
See JESD51-7 and JESD51-9 for detailed information regarding
board construction. For additional information, see the AN-617
application note, MicroCSPTM Wafer Level Chip Scale Package.
ΨJB is the junction-to-board thermal characterization parameter
with units of °C/ W. ΨJB of the package is based on modeling and
calculation using a 4-layer board. The JESD51-12 document,
Guidelines for Reporting and Using Electronic Package Thermal
Information, states that thermal characterization parameters are
not the same as thermal resistances. ΨJB measures the component
power flowing through multiple thermal paths rather than through
a single path, as in thermal resistance (θJB). Therefore, ΨJB thermal
paths include convection from the top of the package as well as
radiation from the package, factors that make ΨJB more useful
in real-world applications. Maximum junction temperature (TJ)
is calculated from the board temperature (TB) and the power
dissipation (PD) using the formula
TJ = TB + (PD × ΨJB)
See JESD51-8, JESD51-9, and JESD51-12 for more detailed
information about ΨJB.
THERMAL RESISTANCE
θJA and ΨJB are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type θJA ΨJB Unit
4-Ball, 0.4 mm Pitch WLCSP 260 58.4 °C/W
ESD CAUTION
ADP190/ADP191 Data Sheet
Rev. E | Page 6 of 16
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
VIN VOUT
12
EN
A
BGND
TOP VIEW
(Not to Scale)
07874-002
Figure 4. Pin Configuration
Table 5. Pin Function Descriptions
Pin No. Mnemonic Description
A1 VIN Input Voltage.
B1 EN Enable Input. Drive EN high to turn on the switch; drive EN low to turn off the switch.
A2 VOUT Output Voltage.
B2 GND Ground.
Data Sheet ADP190/ADP191
Rev. E | Page 7 of 16
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 1.8 V, VEN = VIN > VIH, ILOAD = 100 mA, TA = 25°C, unless otherwise noted.
200
180
160
140
120
100
80
60 12585
25–5–40 JUNCTION T E M P E RATURE, T
J
(° C)
RDS
ON
(mΩ)
V
IN
= 1.2V
V
IN
= 1.8V
07874-004
V
IN
= 3.6V
Figure 5. RDSON vs. Temperature (Includes ~15 mΩ Trace Resistance)
200
180
160
140
120
100
80
1.2 2.01.6 2.4 2.8 3.2 3.6
V
IN
(V)
RDS
ON
(mΩ)
I
LOAD
= 10mA
I
LOAD
= 100mA
I
LOAD
= 250mA
I
LOAD
= 350mA
I
LOAD
= 500mA
07874-005
Figure 6. RDSON vs. Input Voltage, VIN (Includes ~15 mΩ Trace Resistance)
100
80
60
40
20
0
–20010050 150 200 250 300 350
LOAD (mA)
DIFFE RE NCE ( mV )
VIN = 1.2V
VIN = 2.5V
VIN = 3.6V
VIN = 1.8V
07874-006
Figure 7. Voltage Drop vs. Load Current (Includes ~15 mΩ Trace Resistance)
CH1 500mV CH2 2V M1.00µs A CH1 990mV
T 3.0µ s
1
2
T
V
EN
V
OUT
V
OUT
= 3.6V
I
LOAD
= 200mA
C
LOAD
= 1µF
V
EN
= 1.5V
07874-007
Figure 8. ADP190 Turn-On Delay, Input Voltage = 3.6 V
2
CH1 500mV CH2 1V M4µs A CH1 990mV
T 12µs
1
T
V
OUT
= 1.8V
I
LOAD
= 200mA
C
LOAD
= 1µF
V
EN
= 1.5V
07874-008
V
EN
V
OUT
Figure 9. ADP190 Turn-On Delay, Input Voltage = 1.8 V
2
3
CH1 2.00V CH2 100mA
CH3 2.00V M20.0µs A CH1 1. 24V
T 10.20%
1
V
EN
I
IN
V
OUT
T
07874-110
Figure 10. ADP191 Turn-On Delay and Inrush Current
vs. Input Voltage = 3.6 V
ADP190/ADP191 Data Sheet
Rev. E | Page 8 of 16
2
3
CH1 2.00V CH2 50.0mA
CH3 1.00V M40.0µs A CH1 1.24V
T 10.20%
1
V
EN
I
IN
V
OUT
T
07874-111
Figure 11. ADP191 Turn-On Delay and Inrush Current
vs. Input Voltage = 1.8 V
3
CH1 2.00V CH2 50.0mA
CH3 1.00V M200µs A CH1 600mV
T 10.20%
1
V
EN
V
OUT
T
07874-112
Figure 12. ADP191 Turn-Off Delay, Input Voltage = 3.6 V
3
CH1 2.00V CH2 50.0mA
CH3 500mV M200µs A CH1 600mV
T 10.20%
1
V
EN
V
OUT
T
07874-113
Figure 13. ADP191 Turn-Off Delay, Input Voltage = 1.8 V
1.3
1.2
1.1
1.0
0.9
0.8
0.7 1258525
–5
–40 JUNCTION TEMP E RATURE, T
J
(° C)
GROUND CURRENT ( µA)
I
LOAD
= 10mA
I
LOAD
= 100mA
I
LOAD
= 250mA
I
LOAD
= 350mA
I
LOAD
= 500mA
07874-009
Figure 14. Ground Current vs. Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6 3.2 3.61.2 1.7 2.2 2.7
V
IN
(V)
GROUND CURRENT ( µA)
I
LOAD
= 10mA
I
LOAD
= 100mA
I
LOAD
= 250mA
I
LOAD
= 350mA
I
LOAD
= 500mA
07874-010
Figure 15. Ground Current vs. Input Voltage, VIN
0.7
0.6
0.5
0.4
0.3
0.2
0
0.1
1251007550250–25–50 JUNCTION TEM P E RATURE, T
J
(° C)
SHUT DOWN CURRE NT (µ A)
V
IN
= 1.2V
V
IN
= 1.8V
V
IN
= 2.5V
V
IN
= 3.6V
07874-011
Figure 16. Shutdown Current vs. Temperature
Data Sheet ADP190/ADP191
Rev. E | Page 9 of 16
THEORY OF OPERATION
The ADP190/ADP191 are high-side PMOS load switches. They
are designed for supply operation from 1.1 V to 3.6 V. The PMOS
load switch is designed for low on resistance, 105 mΩ at VIN =
1.8 V, and supports 500 mA of continuous current. It is a low
ground current device with a nominal 4 MΩ pull-down resistor
on its enable pin. The package is a space-saving 0.8 mm ×
0.8 mm, 4-ball WLCSP.
The ADP191 incorporates an internal output discharge resistor
to discharge the output capacitance when the ADP191 output is
disabled. The ADP191 also contains circuitry to limit the switch
turn-on slew rate to limit the inrush current.
GND
EN
VIN VOUT
ADP190
LEVEL SHIFT
AND SLE W
RATE CONT ROL
07874-030
Figure 17. ADP190 Functional Block Diagram
GND
EN
VIN VOUT
ADP191
LEVEL SHIFT
AND SLE W
RATE CONT ROL
AND LO AD
DISCHARGE
07874-118
Figure 18. ADP191 Functional Block Diagram
ADP190/ADP191 Data Sheet
Rev. E | Page 10 of 16
APPLICATIONS INFORMATION
GROUND CURRENT
The major source for ground current in the ADP190/ADP191 is
the 4 MΩ pull-down on the enable (EN) pin. Figure 19 shows
typical ground current when VEN = VIN and VIN varies from 1.1 V
to 3.6 V.
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
350300
250200
150100
500LOAD (mA)
GROUND CURRENT ( µA)
07874-013
V
IN
= 1.2V
V
IN
= 1.8V
V
IN
= 2.5V
V
IN
= 3.6V
Figure 19. Ground Current vs. Load Current
As shown in Figure 20, an increase in ground current can occur
when VEN ≠ VIN. This is caused by the CMOS logic nature of the
level shift circuitry as it translates an EN signal ≥ 1.1 V to
a logic high. This increase is a function of the VIN − VEN delta.
14
12
10
8
6
4
2
03.50.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 3.33.12.9
V
EN
(V)
I
GND
(µA)
07874-014
V
OUT
= 1.8V
V
OUT
= 3.6V
Figure 20. Typical Ground Current when VEN ≠ VIN
ENABLE FEATURE
The ADP190/ADP191 use the EN pin to enable and disable the
VOUT pin under normal operating conditions. As shown in
Figure 21, when a rising voltage on EN crosses the active
threshold, VOUT turns on. When a falling voltage on EN
crosses the inactive threshold, VOUT turns off.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
01.200.4 0.5 0.6 0.70.1 0.2 0.3 0.8 0.9 1.0 1.1
V
EN
(V)
V
OUT
(V)
07874-015
Figure 21. Typical EN Operation
As shown in Figure 21, the EN pin has built-in hysteresis. This
prevents on/off oscillations that can occur due to noise on the
EN pin as it passes through the threshold points.
The EN pin active/inactive thresholds derive from the VIN
voltage; therefore, these thresholds vary with changing input
voltage. Figure 22 shows typical EN active/inactive thresholds
when the input voltage varies from 1.1 V to 3.6 V.
1.15
1.05
0.95
0.85
0.75
0.65
0.55
0.45
0.35
3.60
1.20
1.35
1.50
1.65
1.80
1.95
2.10
2.25
2.40
2.55
2.70
2.85
3.00
3.15
3.30
3.45
V
IN
(V)
TYPICAL EN THRESHOLDS (V)
EN ACT IVE
EN I NACTIV E
07874-016
Figure 22. Typical EN Pin Thresholds vs. Input Voltage, VIN
TIMING
Turn -on delay is defined as the delta between the time that EN
reaches >1.1 V until VOUT rises to ~10% of its final value. The
ADP190/ADP191 include circuitry to set the typical 1.5 μs turn-
on delay at 3.6 V VIN to limit the VIN inrush current. As shown in
Figure 23, the turn-on delay is dependent on the input voltage.
Data Sheet ADP190/ADP191
Rev. E | Page 11 of 16
2
CH1 1V CH2 1V M4µs A CH1 2.34V
T 15.96µ s
1
T
I
LOAD
= 100mA
C
LOAD
= 1µF
V
EN
= 3.6V
V
OUT
= 1.2V
V
OUT
= 1.8V
V
OUT
= 2.5V
V
EN
07874-017
Figure 23. ADP190 Typical Turn-On Delay Time with Varying Input Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
05000100 200 300 400
TIME (µs)
INPUT VOLTAGE (V)
V
EN
= 1.8V
V
OUT
= 1.2V
V
OUT
= 1.8V
V
OUT
= 3.6V
07874-124
Figure 24. ADP191 Typical Turn-On Delay Time with Varying Input Voltage
The rise time is defined as the delta between the time from 10%
to 90% of VOUT reaching its final value. It is dependent on the
RC time constant where C = load capacitance (CLOAD) and R =
RDSON||RLOAD. Because RDSON is usually smaller than RLOAD, an
adequate approximation for RC is RDSON × CLOAD. The ADP190/
ADP191 do not need any input or load capacitor, but capacitors
can be used to suppress noise on the board. If significant load
capacitance is connected, inrush current is a concern.
The ADP191 contains circuitry to limit the slew rate of the
switch turn to reduce the turn on inrush current. See Figure 25
and Figure 26 for a comparison of rise time and inrush current.
2
3
CH1 2V
CH3 2.00mA Ω
CH2 2V M10µs A CH1 2.32V
T 40.16µ s
1
T
VOUT = 1. 8V
ILOAD = 200mA
CLOAD = 1µF
VEN = 3.6V
VEN
VOUT
IIN
07874-029
Figure 25. ADP190 Typical Rise Time and Inrush Current with CLOAD = 1 μF
2
3
CH1 2.00V CH2 100mA
CH3 2.00V M20.0µs A CH1 1. 24V
T 10.20%
1
V
EN
I
IN
V
OUT
T
07874-126
Figure 26. ADP191 Typical Rise Time and Inrush Current with CLOAD = 1 μF
2
3
CH1 2V
CH3 2.00mA Ω
CH2 2V M10µs A CH1 1.00V
T 39.8µ s
1
VOUT = 1. 8V
ILOAD = 200mA
CLOAD = 4.7µF
VEN= 3.6V
VEN
VOUT
IIN
T
07874-019
Figure 27. ADP190 Typical Rise Time and Inrush Current with CLOAD = 4.7 µF
ADP190/ADP191 Data Sheet
Rev. E | Page 12 of 16
The turn-off time is defined as the delta between the time from
90% to 10% of VOUT reaching its final value. It is also dependent
on the RC time constant.
The ADP191 incorporates an internal output discharge resistor
to discharge the output capacitance when the ADP191 output is
disabled. See Figure 28 and Figure 29 for a comparison of turn-
off times.
2
CH1 1V CH2 500mV M10µs A CH1 1V
T 30.36µ s
1
TVOUT = 1. 8V
VEN = 3.6V
ILOAD = 200mA,
CLOAD = 1µF
ILOAD = 100mA,
CLOAD = 1µF
ILOAD = 100mA,
CLOAD = 4.7µF
VEN
07874-020
Figure 28. ADP190 Typical Turn-Off Time, Various Load Currents
3
CH1 2.00V
CH3 500mV M200µs A CH1 600mV
T 10.20%
1
V
EN
V
OUT
T
07874-129
Figure 29. ADP191 Typical Turn-Off Time, Load Current = 0 mA
THERMAL CONSIDERATIONS
In most applications, the ADP190/ADP191 do not dissipate
much heat due to their low on-channel resistance. However, in
applications with high ambient temperature and load current,
the heat dissipated in the package can be large enough to cause
the junction temperature of the die to exceed the maximum
junction temperature of 125°C.
The junction temperature of the die is the sum of the ambient
temperature of the environment and the temperature rise of the
package due to the power dissipation, as shown in Equation 1.
To guarantee reliable operation, the junction temperature of
the ADP190/ADP191 must not exceed 125°C. To ensure that
the junction temperature stays below this maximum value, the
user must be aware of the parameters that contribute to junction
temperature changes. These parameters include ambient temper-
ature, power dissipation in the power device, and thermal
resistances between the junction and ambient air (θJA). The θJA
value is dependent on the package assembly compounds that
are used and the amount of copper used to solder the package
GND pin to the PCB. Table 6 shows typical θJA values of the 4-ball
WLCSP for various PCB copper sizes. Table 7 shows the typical
ΨJB value of the 4-ball WLCSP.
Table 6. Typical θJA Values for WLCSP
Copper Size (mm2) θJA (°C/W)
01 260
50 159
100 157
300 153
500 151
1 Device soldered to minimum size pin traces.
Table 7. Typical ΨJB Values
Package ΨJB Unit
4-Ball WLCSP 58.4 °C/W
The junction temperature of the ADP190/ADP191 can be
calculated from the following equation:
TJ = TA + (PD × θJA) (1)
where:
TA is the ambient temperature.
PD is the power dissipation in the die, given by
PD = [(VIN − VOUT) × ILOAD] + (VIN × IGND) (2)
where:
ILOAD is the load current.
IGND is the ground current.
VIN and VOUT are the input and output voltages, respectively.
Power dissipation due to ground current is quite small and
can be ignored. Therefore, the junction temperature equation
simplifies to the following:
TJ = TA + {[(VIN − VOUT) × ILOAD] × θJA} (3)
As shown in Equation 3, for a given ambient temperature, input-
to-output voltage differential, and continuous load current, there
exists a minimum copper size requirement for the PCB to ensure
that the junction temperature does not rise above 125°C. Figure 30
to Figure 35 show junction temperature calculations for different
ambient temperatures, load currents, VIN to VOUT differentials,
and areas of PCB copper.
Data Sheet ADP190/ADP191
Rev. E | Page 13 of 16
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VIN – VOUT (V)
JUNCTION TEM P E RATURE, TJ (°C)
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
MAX JUNCTION TE M P E RATURE
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
07874-021
Figure 30. 500 mm2 of PCB Copper, TA = 25°C
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VIN – VOUT (V)
JUNCTION TEM P E RATURE, TJ (°C)
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
MAX JUNCTION TE M P E RATURE
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
07874-022
Figure 31. 100 mm2 of PCB Copper, TA = 25°C
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VIN – VOUT (V)
JUNCTION TEM P E RATURE, TJ (°C)
MAX JUNCTION
TEMPERATURE
LOAD CURRENT = 1mA
LOAD CURRENT =
10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
07874-023
Figure 32. 0 mm2 of PCB Copper, TA = 25°C
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VIN – VOUT (V)
JUNCTION TEM P E RATURE, TJ (°C)
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
MAX JUNCTION TE M P E RATURE
07874-024
Figure 33. 500 mm2 of PCB Copper, TA = 50°C
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VIN – VOUT (V)
JUNCTION TEM P E RATURE, TJ (°C)
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
MAX JUNCTION TE M P E RATURE
07874-025
Figure 34. 100 mm2 of PCB Copper, TA = 50°C
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VIN – VOUT (V)
JUNCTION TEM P E RATURE, TJ (°C)
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
MAX JUNCTION
TEMPERATURE
07874-026
Figure 35. 0 mm2 of PCB Copper, TA = 50°C
ADP190/ADP191 Data Sheet
Rev. E | Page 14 of 16
In cases where the board temperature is known, use the thermal
characterization parameter, ΨJB, to estimate the junction temper-
ature rise. Maximum junction temperature (TJ) is calculated
from the board temperature (TB) and power dissipation (PD)
using the formula
TJ = TB + (PD × ΨJB) (4)
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VIN – VOUT (V)
JUNCTION TEM P E RATURE, TJ (°C)
MAX JUNCTION TE M P E RATURE
LOAD CURRENT = 1mA
LOAD CURRENT = 10mA
LOAD CURRENT = 25mA
LOAD CURRENT = 50mA
LOAD CURRENT = 75mA
LOAD CURRENT = 100mA
LOAD CURRENT = 150mA
07874-027
Figure 36. TB = 85°C
PCB LAYOUT CONSIDERATIONS
Improve heat dissipation from the package by increasing the
amount of copper attached to the pins of the ADP190/ADP191 .
However, as listed in Table 6, a point of diminishing returns is
eventually reached, beyond which an increase in the copper size
does not yield significant heat dissipation benefits.
It is critical to keep the input and output traces as wide and as
short as possible to minimize the circuit board trace resistance.
07874-028
Figure 37. ADP190 PCB Layout
07874-200
Figure 38. ADP191 PCB Layout
Data Sheet ADP190/ADP191
Rev. E | Page 15 of 16
OUTLINE DIMENSIONS
0.800
0.760 S Q
0.720
BOTTOM VIEW
(BALL SI DE UP)
TOP VIEW
(BALL SIDE DOW N)
A
1
2
B
BALLA1
IDENTIFIER
0.40
REF
0.660
0.600
0.540 END VIEW
0.280
0.260
0.240
0.430
0.400
0.370
SEATING
PLANE 0.230
0.200
0.170
COPLANARITY
0.05
04-18-2012-A
Figure 39. 4-Ball Wafer Level Chip Scale Package [WLCSP]
(CB-4-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option Branding
ADP190ACBZ-R7 −40°C to +85°C 4-Ball Wafer Level Chip Scale Package [WLCSP] CB-4-3 4D
ADP191ACBZ-R7 −40°C to +85°C 4-Ball Wafer Level Chip Scale Package [WLCSP] CB-4-3 4G
ADP190CB-EVALZ Evaluation Board
ADP191CB-EVALZ Evaluation Board
1 Z = RoHS Compliant Part.
ADP190/ADP191 Data Sheet
Rev. E | Page 16 of 16
NOTES
©2009–2013 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D07874-0-2/13(E)
