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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDG332PZ tm P-Channel PowerTrench(R) MOSFET -20V, -2.6A, 97m: Features General Description Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A This P-Channel MOSFET uses Fairchild's advanced low voltage PowerTrench(R) process. It has been optimized for battery power management applications. Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A Max rDS(on) = 330m: at VGS = -1.5V, ID = -1.0A Applications Very low level gate drive requirements allowing operation in 1.5V circuits Battery management Load switch Very small package outline SC70-6 RoHS Compliant S D D D D D G S D G D D SC70-6 Pin 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TJ, TSTG Units V 8 V -2.6 -Pulsed PD Ratings -20 -9 Power Dissipation (Note 1a) 0.75 Power Dissipation (Note 1b) 0.48 Operating and Storage Junction Temperature Range -55 to +150 A W C Thermal Characteristics RTJA Thermal Resistance, Junction to Ambient Single operation (Note 1a) 170 RTJA Thermal Resistance, Junction to Ambient Single operation (Note 1b) 260 C/W Package Marking and Ordering Information Device Marking .2P Device FDG332PZ (c)2008 Fairchild Semiconductor Corporation FDG332PZ Rev.B1 Package SC70-6 1 Reel Size 7'' Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDG332PZ P-Channel PowerTrench(R) MOSFET December 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient -20 ID = -250PA, referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V IGSS Gate to Source Leakage Current VGS = 8V, VDS= 0V V -13 mV/C -1 PA 10 PA -1.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250PA, referenced to 25C 2.5 VGS = -4.5V, ID = -2.6A 73 95 VGS = -2.5V, ID = -2.2A 90 115 VGS = -1.8V, ID = -1.9A 117 160 VGS = -1.5V, ID = -1.0A 147 330 VGS = -4.5V, ID = -2.6A , TJ = 125C 100 133 rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -0.4 VDD = -5V, ID = -2.6A -0.7 mV/C 9 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10V, VGS = 0V, f = 1MHZ 420 560 pF 85 115 pF 75 115 pF 5.2 10 ns 4.8 10 ns 59 95 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 28 45 ns Qg Total Gate Charge 7.6 10.8 nC Qgs Gate to Source Charge Qgd Gate to Drain "Miller" Charge VDD = -10V, ID = -2.6A, VGS = -4.5V, RGEN = 6: VGS = -4.5V, VDD = -10V, ID = -2.6A 0.9 nC 1.9 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -0.6A IF = 2.6A, di/dt = 100A/Ps (Note 2) -0.6 A -0.7 -1.2 V 28 45 ns 8 13 nC Notes: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 170C/W when mounted on a 1 in2 pad of 2 oz copper . b. 260C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. (c)2008 Fairchild Semiconductor Corporation FDG332PZ Rev.B1 2 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted 9 -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.5 VGS = -4.5V VGS = -3V VGS = -2.5V 6 VGS = -1.8V 3 VGS = -1.5V PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 0 0.0 0.4 0.8 1.2 1.6 2.0 VGS = -1.5V 2.0 VGS = -1.8V 1.5 VGS = -2.5V 1.0 0.5 0 3 Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.2 1.0 0.8 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 300 ID = -2.6A VGS = -4.5V -25 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 250 200 TJ = 125oC 150 100 TJ = 25oC 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 9 -IS, REVERSE DRAIN CURRENT (A) 4 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) ID = -2.6A 50 150 Figure 3. Normalized On - Resistance vs Junction Temperature VDD = -5V 6 3 TJ = 150oC 0 0.0 9 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -50 6 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 VGS = -4.5V VGS = -3V PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX TJ = 25oC TJ = -55oC 0.5 1.0 1.5 2.0 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 0.0 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics (c)2008 Fairchild Semiconductor Corporation FDG332PZ Rev.B1 VGS = 0V 1 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 1000 Ciss ID = -2.6A VDD = -5V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 4.5 3.0 VDD = -10V VDD = -15V 1.5 Coss 100 30 0.1 0.0 0 2 4 6 8 1 20 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 5 10 10 100us -Ig, GATE LEAKAGE CURRENT(uA) -ID, DRAIN CURRENT (A) Crss f = 1MHz VGS = 0V 1ms 1 10ms THIS AREA IS LIMITED BY rDS(on) 0.1 100ms SINGLE PULSE TJ = MAX RATED 1s 10s DC RTJA = 260oC/W TA = 25oC 4 VGS = 0V 10 3 10 2 10 TJ = 150oC 1 10 0 10 -1 10 TJ = 25oC -2 10 -3 10 -4 10 0.01 0.1 1 10 50 0 5 10 15 20 -VGS, GATE TO SOURCE VOLTAGE (V) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 P(PK), PEAK TRANSIENT POWER (W) VGS = -4.5V 10 SINGLE PULSE o RTJA = 260 C/W o TA = 25 C 1 0.1 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 11. (c)2008 Fairchild Semiconductor Corporation FDG332PZ Rev.B1 Transient Thermal Response Curve 4 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZqJA x RqJA + TA SINGLE PULSE o RTJA = 260 C/W 0.01 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve (c)2008 Fairchild Semiconductor Corporation FDG332PZ Rev.B1 5 www.fairchildsemi.com FDG332PZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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