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tm
December 2008
FDG332PZ P-Channel PowerTrench®MOSFET
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
www.fairchildsemi.com
1
FDG332PZ
P-Channel PowerTrench® MOSFET
-20V, -2.6A, 97m:
Features
Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A
Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A
Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A
Max rDS(on) = 330m: at VGS = -1.5V, ID = -1.0A
Very low level gate drive requirements allowing operation
in 1.5V circuits
Very small package outline SC70-6
RoHS Compliant
General Description
This P-Channel MOSFET uses Fairchild’s advanced low
voltage PowerTrench® process. It has been optimized for
battery power management applications.
Applications
Battery management
Load switch
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -20 V
VGS Gate to Source Voltage ±8 V
ID
Drain Current -Continuous -2.6 A
-Pulsed -9
PD
Power Dissipation (Note 1a) 0.75 W
Power Dissipation (Note 1b) 0.48
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RTJA Thermal Resistance, Junction to Ambient Single operation (Note 1a) 170 °C/W
RTJA Thermal Resistance, Junction to Ambient Single operation (Note 1b) 260
Device Marking Device Package Reel Size Tape Width Quantity
.2P FDG332PZ SC70-6 7’’ 8 mm 3000 units
D
D
G
D
D
S
D
S
D
D
G
D
Pin 1
SC70-6
FDG332PZ P-Channel PowerTrench®MOSFET
www.fairchildsemi.com
2
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V -20 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient ID = -250PA, referenced to 25°C -13 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -16V, VGS = 0V -1 PA
IGSS Gate to Source Leakage Current VGS = ±8V, VDS= 0V ±10 PA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250PA -0.4 -0.7 -1.5 V
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = -250PA, referenced to 25°C 2.5 mV/°C
rDS(on) Static Drain to Source On Resistance
VGS = -4.5V, ID = -2.6A 73 95
m:
VGS = -2.5V, ID = -2.2A 90 115
VGS = -1.8V, ID = -1.9A 117 160
VGS = -1.5V, ID = -1.0A 147 330
VGS = -4.5V, ID = -2.6A , TJ = 125°C 100 133
gFS Forward Transconductance VDD = -5V, ID = -2.6A 9 S
Dynamic Characteristics
Ciss Input Capacitance
VDS = -10V, VGS = 0V, f = 1MHZ
420 560 pF
Coss Output Capacitance 85 115 pF
Crss Reverse Transfer Capacitance 75 115 pF
Switching Characteristics
td(on) Turn-On Delay Time
VDD = -10V, ID = -2.6A,
VGS = -4.5V, RGEN = 6:
5.2 10 ns
trRise Time 4.8 10 ns
td(off) Turn-Off Delay Time 59 95 ns
tfFall Time 28 45 ns
QgTotal Gate Charge
VGS = -4.5V, VDD = -10V, ID = -2.6A
7.6 10.8 nC
Qgs Gate to Source Charge 0.9 nC
Qgd Gate to Drain “Miller” Charge 1.9 nC
Drain-Source Diode Characteristics
ISMaximum Continuous Drain-Source Diode Forward Current -0.6 A
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS= -0.6A (Note 2) -0.7 -1.2 V
trr Reverse Recovery Time IF = 2.6A, di/dt = 100A/Ps28 45 ns
Qrr Reverse Recovery Charge 8 13 nC
and Maximum Ratings
Notes:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
a. 170°C/W when mounted on
a 1 in2pad of 2 oz copper .
b. 260°C/W when mounted on
a minimum pad of 2 oz copper.
FDG332PZ P-Channel PowerTrench®MOSFET
www.fairchildsemi.com
3
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1.
0.0 0.4 0.8 1.2 1.6 2.0
0
3
6
9
VGS = -2.5V
VGS = -4.5V
VGS = -1.5V
VGS = -1.8V
VGS = -3V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0369
0.5
1.0
1.5
2.0
2.5
VGS = -2.5V
VGS = -1.8V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID,DRAIN CURRENT (A)
VGS = -3V
VGS = -1.5V
VGS = -4.5V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
Figure 3. Normalized On - Resistance
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = -2.6A
VGS = -4.5V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ,JUNCTION TEMPERATURE (oC)
vs Junction Temperature
Figure 4.
12345
50
100
150
200
250
300
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ= 125oC
TJ= 25oC
ID= -2.6A
rDS(on),DRAIN TO
SOURCE ON-RESISTANCE (m:)
-VGS, GATE TO SOURCE VOLTAGE (V)
O n -R es is ta nc e v s G a t e to
Source Voltage
Figure 5. Transfer Characteristics
0.0 0.5 1.0 1.5 2.0 2.5
0
3
6
9
VDD = -5V
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ= 150oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1E-3
0.01
0.1
1
4
TJ = -55oC
TJ = 25oC
TJ= 150oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
S ou rc e t o Dr ai n D i od e
Forward Voltage vs Source Current
FDG332PZ P-Channel PowerTrench®MOSFET
www.fairchildsemi.com
4
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
Figure 7.
02468
0.0
1.5
3.0
4.5
ID= -2.6A
VDD = -15V
VDD = -5V
-VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE (nC)
VDD = -10V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
30
20
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.1 1 10
0.01
0.1
1
10
10s
1s
100ms
DC
10ms
1ms
100us
THIS AREA IS
LIMITED BY rDS(on)
50
SINGLE PULSE
TJ = MAX RATED
RTJA = 260oC/W
TA=25oC
-ID, DRAIN CURRENT (A)
-VDS, DRAIN to SOURCE VOLTAGE (V)
F or w a r d B ia s S af e
Operating Area
Figure 10.
0 5 10 15 20
10-4
10-3
10-2
10-1
100
101
102
103
104
105
VGS = 0V
TJ= 25oC
TJ= 150oC
-VGS,GATE TO SOURCE VOLTAGE (V)
-Ig,GATE LEAKAGE CURRENT(uA)
Gate Leakage Current vs Gate to
Source Voltage
Figure 11. Transient Thermal Response Curve
10-3 10-2 10-1 100101102103
0.1
1
10
100
P(PK), PEAK TRANSIENT POWER (W)
VGS = -4.5V
SINGLE PULSE
RTJA = 260oC/W
TA = 25oC
t, PULSE WIDTH (s)
Typical Characteristics TJ = 25°C unless otherwise noted
FDG332PZ P-Channel PowerTrench®MOSFET
www.fairchildsemi.com
5
©2008 Fairchild Semiconductor Corporation
FDG332PZ Rev.B1
Figure 12.
10-3 10-2 10-1 100101102103
0.01
0.1
1
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZTJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RTJA = 260oC/W
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZqJA x RqJA + TA
Transient Thermal Response Curve
Typical Characteristics TJ = 25°C unless otherwise noted
Rev. I37
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