ABA-51563
3.5 GHz Broadband Silicon RFIC Amplifier
Data Sheet
Description
Avago’s ABA-51563 is an economical, easy-to-
use, internally 50-ohm matched silicon monolithic
broadband amplifier that offers excellent gain and flat
broadband response from DC to 3.5 GHz. Packaged in
an ultraminiature industry-standard SOT-363 package, it
requires half the board space of a SOT-143 package.
At 2 GHz, the ABA-51563 offers a small-signal gain of
21.5 dB, output P1dB of 1.8 dBm and 11.4 dBm output
third order intercept point. It is suitable for use as buffer
amplifiers for wideband applications. They are designed
for low cost gain blocks in cellular applications, DBS tuners,
LNB and other wireless communications systems.
ABA-51563 is fabricated using Avago’s HP25 silicon
bipolar process, which employs a double-diffused single
polysilicon process with self-aligned submicron emitter
geometry. The process is capable of simultaneous high
fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The
process utilizes industry standard device oxide isolation
technologies and submicron aluminum multilayer
interconnect to achieve superior performance, high
uniformity, and proven reliability.
Features
• Operating frequency: DC ~ 3.5 GHz
• 21.5 dB gain
• VSWR < 2.0 throughout operating frequency
• 1.8 dBm output P1dB
• 3.7 dB noise figure
• Unconditionally stable
• Single 5V supply (Id = 18 mA)
• Lead-free option available
Applications
•
Amplifier for cellular, cordless, special mobile radio, PCS,
ISM, wireless LAN, DBS, TVRO, and TV tuner applications
Surface Mount Package: SOT-363/SC70
Pin Connections and Package Marking Simplified Schematic
Note:
Top View. Package marking provides orientation and identification.
“x” is character to identify date code.
Vcc
GND 3
AHx
Input
GND 1
GND 2 Output
& Vcc
Vcc
Ground 1
Ground 2
Ground 3
RF
Input
RF
Output
& Vcc
Attention:
Observe precautions for handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
2
ABA-51563 Absolute Maximum Ratings[1]
Symbol Parameter Units Absolute Max.
Vcc Device Voltage, RF output to ground (T = 25°C) V +7
Pin CW RF Input Power (Vcc = 5V) dBm +20
Pdiss Total Power Dissipation[3] W 0.3
Tj Junction Temperature °C 150
TSTG Storage Temperature °C -65 to 150
Notes:
1. Operation of this device in excess of any
of these limits may cause permanent
damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 2.3 mW/°C for Tb > 120.8°C.
Electrical Specifications
Tc = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 5V, Freq = 2 GHz, unless stated otherwise.
Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev.
Gp[1] Power Gain (|S21|2) dB 20 21.5 0.2
∆Gp Power Gain Flatness, f = 0.1 ~ 2.5 GHz dB 1.0
f = 0.1 ~ 3.5 GHz 1.3
NF[1] Noise Figure dB 3.7 4 0.12
P1dB[1] Output Power at 1dB Gain Compression dBm 1.8 0.13
OIP3[1] Output Third Order Intercept Point dBm 11.4 0.24
VSWRin[1] Input VSWR 1.2
VSWRout[1] Output VSWR 1.2
Icc[1] Device Current mA 18 28 0.3
td[1] Group Delay ps 140
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal
values anywhere within the upper and lower spec limits.
Figure 1. ABA-51563 Production Test Circuit.
RF Outpu
t
RF Input Vcc
RFC
C
block
C
block
C
bypass
AHx
Thermal Resistance[2] (Vcc = 5V)
θjc = 104°C/W
3
ABA-51563 Typical Performance
Tc = +25°C, Zo = 50Ω, Vcc = 5V unless stated otherwise.
FREQUENCY (GHz)
Figure 9. Output IP3 vs. Frequency and
Temperature.
OIP3 (dBm)
0
16
12
8
4
0
41
0.5 2 2.5 31.5 3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 8. Output IP3 vs. Frequency and Voltage.
OIP3 (dBm)
0
20
16
12
8
4
0
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
P1dB (dBm)
0
6
4
2
0
-2
-4
-6
41
0.5 2 2.5 31.5 3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
P1dB (dBm)
0
6
4
2
0
-2
-4
-6
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Temperature.
NF (dB)
0
6
5
4
3
2
41
0.5 2 2.5 31.5 3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 4. Noise Figure vs. Frequency and
Voltage.
NF (dB)
0
4.5
4
3.5
3
2.5
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency and Temperature.
GAIN (dB)
0
23
22
21
20
19
18
17
41
0.5 2 2.5 31.5 3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
GAIN (dB)
0
23
22
21
20
19
18
17
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
4
FREQUENCY (GHz)
Figure 10. Input and Output VSWR vs.
Frequency.
VSWR
0
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
6
13425
VSWR IN
VWSR OUT
VOLTAGE (V)
Figure 11. Supply Current vs. Voltage and
Temperature.
Icc (mA)
0
60
50
40
30
20
10
0
2
145637
+25C
-40C
+85C
ABA-51563 Typical Performance, continued
Tc = +25°C, Zo = 50Ω, Vcc = 5V unless stated otherwise.
FREQUENCY (GHz)
Figure 9. Output IP3 vs. Frequency and
Temperature.
OIP3 (dBm)
0
16
12
8
4
0
41
0.5 2 2.5 31.5 3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 8. Output IP3 vs. Frequency and Voltage.
OIP3 (dBm)
0
20
16
12
8
4
0
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
P1dB (dBm)
0
6
4
2
0
-2
-4
-6
41
0.5 2 2.5 31.5 3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
P1dB (dBm)
0
6
4
2
0
-2
-4
-6
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Temperature.
NF (dB)
0
6
5
4
3
2
41
0.5 2 2.5 31.5 3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 4. Noise Figure vs. Frequency and
Voltage.
NF (dB)
0
4.5
4
3.5
3
2.5
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency and Temperature.
GAIN (dB)
0
23
22
21
20
19
18
17
41
0.5 2 2.5 31.5 3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
GAIN (dB)
0
23
22
21
20
19
18
17
41
0.5 2 2.5 31.5 3.5
4.5V
5V
5.5V
5
ABA-51563 Typical Scattering Parameters
TC = +25°C, VCC = 5V, ZO = 50 Ω, unless stated otherwise
Freq S11 S
11 S
21 S
21 S
21 S
12 S
12 S
12 S
22 S
22 K
(GHz) Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. Factor
0.05 0.06 175.8 20.8 10.93 -2.3 -27.3 0.04 -0.8 0.08 -2.3 1.294
0.10 0.06 174.1 20.7 10.88 -4.4 -27.3 0.04 -1.4 0.08 -6.0 1.297
0.20 0.06 170.4 20.8 10.93 -8.6 -27.5 0.04 -2.5 0.07 -11.5 1.313
0.30 0.06 166.0 20.8 10.93 -12.8 -27.5 0.04 -3.3 0.07 -15.1 1.313
0.40 0.06 160.6 20.8 10.97 -17.1 -27.7 0.04 -3.8 0.07 -17.7 1.331
0.50 0.07 161.9 20.8 10.97 -21.4 -27.7 0.04 -4.1 0.07 -17.7 1.330
0.60 0.07 160.0 20.8 10.99 -25.6 -28.0 0.04 -4.6 0.07 -17.8 1.351
0.70 0.07 155.8 20.9 11.04 -30.0 -28.0 0.04 -4.8 0.07 -18.9 1.346
0.80 0.08 153.5 20.9 11.10 -34.2 -28.2 0.04 -5.0 0.07 -18.5 1.365
0.90 0.08 150.4 20.9 11.13 -38.6 -28.2 0.04 -4.9 0.07 -14.7 1.361
1.00 0.08 148.0 21.0 11.20 -43.0 -28.4 0.04 -4.9 0.08 -9.9 1.380
1.20 0.08 132.5 21.1 11.35 -52.0 -28.6 0.04 -4.4 0.08 11.6 1.391
1.40 0.09 118.9 21.2 11.51 -61.1 -28.9 0.04 -3.8 0.08 26.1 1.403
1.60 0.09 102.9 21.4 11.69 -70.7 -28.9 0.04 -2.7 0.08 37.7 1.386
1.80 0.10 86.5 21.5 11.85 -80.6 -29.1 0.04 -1.3 0.09 44.3 1.399
2.00 0.10 69.6 21.5 11.94 -90.7 -29.1 0.04 0.3 0.10 47.9 1.391
2.20 0.11 50.6 21.6 12.04 -101.2 -29.1 0.04 1.9 0.11 45.1 1.382
2.40 0.10 38.4 21.7 12.15 -112.1 -29.1 0.04 3.0 0.13 41.1 1.369
2.60 0.10 30.1 21.7 12.14 -123.5 -28.9 0.04 4.3 0.16 36.7 1.339
2.80 0.10 17.8 21.6 12.00 -135.3 -28.9 0.04 5.7 0.19 31.6 1.341
3.00 0.09 10.2 21.4 11.70 -147.3 -28.9 0.04 7.4 0.21 26.7 1.354
3.20 0.10 -1.1 21.0 11.27 -158.9 -28.6 0.04 9.8 0.24 21.4 1.352
3.40 0.09 -15.7 20.6 10.73 -170.5 -28.2 0.04 10.8 0.25 14.4 1.343
3.50 0.08 -20.5 20.4 10.45 -176.2 -28.0 0.04 11.4 0.26 11.2 1.337
4.00 0.05 -52.8 18.9 8.86 157.4 -27.1 0.04 12.4 0.27 -4.6 1.389
4.50 0.00 -179.7 17.4 7.40 133.1 -26.2 0.05 12.3 0.27 -18.4 1.457
5.00 0.04 127.8 15.6 6.06 112.1 -25.2 0.06 11.0 0.24 -32.2 1.568
5.50 0.10 114.7 14.1 5.09 92.7 -24.0 0.06 7.2 0.24 -47.4 1.597
6.00 0.16 105.3 12.7 4.30 75.7 -23.0 0.07 1.9 0.20 -62.0 1.657
6
Device Models
Refer to Avago’s web site
www.avagotech.com/view/rf
Package Dimensions
Outline 63 (SOT-363/SC-70)
Recommended PCB Pad Layout for
Avago’s SC70 6L/SOT-363 Products
E
HE
D
e
A1
b
A
A2
Q1
L
c
DIMENSIONS (mm)
MIN.
1.15
1.80
1.80
0.80
0.80
0.00
0.10
0.15
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.30
0.20
0.30
SYMBOL
E
D
HE
A
A2
A1
Q1
e
b
c
L
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.
0.650 BCS
0.026
0.079
0.018
0.039
Dimensions in inches.
Ordering Information
Part Number Devices per Container Container
ABA-51563-TR1 3000 7” reel
ABA-51563-TR2 10000 13” reel
ABA-51563-BLK 100 antistatic bag
ABA-51563-TR1G 3000 7” reel
ABA-51563-TR2G 10000 13” reel
ABA-51563-BLKG 100 antistatic bag
Note: For lead-free option,the part number will have the character “G” at the end.
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-1970EN
AV02-1784EN - February 11, 2009
Device Orientation
Tape Dimensions and Product Orientation for Outline 63
P
P0
P2
F
W
C
D1
D
E
A0
10° MAX.
t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
10° MAX.
B0
K0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P0
E
1.50 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012
0.0100 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
COVER TAPE