MAXIMUM RATINGS: (TA=25°C unless otherwise noted) MJE15028 MJE15030
SYMBOL MJE15029 MJE15031 UNITS
Collector-Base Voltage VCBO 120 150 V
Collector-Emitter Voltage VCEO 120 150 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC8.0 A
Peak Collector Current ICM 16 A
Base Current IB2.0 A
Power Dissipation PD2.0 W
Power Dissipation (TC=25°C) PD50 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 62.5 °C/W
Thermal Resistance ΘJC 2.5 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO VCB=Rated VCBO 10 μA
ICEO VCE=Rated VCEO 100 μA
IEBO VEB=5.0V 10 μA
BVCEO IC=10mA (MJE15028, MJE15029) 120 V
BVCEO IC=10mA (MJE15030, MJE15031) 150 V
VCE(SAT) IC=1.0A, IB=100mA 0.5 V
VBE(ON) VCE=2.0V, IC=1.0A 1.0 V
hFE VCE=2.0V, IC=100mA 40
hFE VCE=2.0V, IC=2.0A 40
hFE VCE=2.0V, IC=3.0A 40
hFE VCE=2.0V, IC=4.0A 20
fTVCE=10V, IC=500mA, f=10MHz 30 MHz
MJE15028 MJE15030 NPN
MJE15029 MJE15031 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
TO-220 CASE
Central
Semiconductor Corp.
TM
R0 (17-February 2009)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MJE15028/MJE15029
Series types are Complementary Silicon Power Transistors
designed for use in audio amplifier applications.
MARKING: FULL PART NUMBER
Central
Semiconductor Corp.
TM
MJE15028 MJE15030 NPN
MJE15029 MJE15031 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
R0 (17-February 2009)
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
TAB) COLLECTOR
MARKING:
FULL PART NUMBER
