COMSET SEMICONDUCT ORS 1/5
BD643/645/647/649/651
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BD644 60
BD646 80
BD648 100
BD650 120
VCBO Collector-Base Voltage
BD652 140
V
BD644 45
BD646 60
BD648 80
BD650 100
VCEO Collector-EmitterVoltage
BD652 120
V
ICCollector Current
BD644
BD646
BD648
BD650
BD652
8A
ICM Collector Peak Current
BD644
BD646
BD648
BD650
BD652
12 A
SILICON NPN DAELINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a
TO-220 enveloppe. They are intended for output stages in audio equipment,
general amplif iers , and analo gue s w itchi ng app lic a t io n.
PNP complements are BD644, BD646, BD648, BD650 and BD652
COMSET SEMICONDUCT ORS 2/5
BD643/645/647/649/651
Symbol Ratings Value Unit
IBBase Current
BD644
BD646
BD648
BD650
BD652
150 mA
PTPower Dissipation @ Tmb < 25°
BD644
BD646
BD648
BD650
BD652
62.5 Watts
TJ TsJunction
Storage Temperature
BD644
BD646
BD648
BD650
BD652
150
-65 to +150 °C
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
RthJ-MB From junction to mounting base
BD644
BD646
BD648
BD650
BD652
2K/W
RthJ-A From junction to ambient in free air
BD644
BD646
BD648
BD650
BD652
70 K/W
COMSET SEMICONDUCT ORS 3/5
BD643/645/647/649/651
EL ECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
IE=0,VCB =VCEOMAX
BD644
BD646
BD648
BD650
BD652
--0.1mA
ICBO Collector Cutoff Current
IE=0,VCB =1/2 VCBOMAX,
TJ=150°C
BD644
BD646
BD648
BD650
BD652
--1mA
ICEO Collector Cutoff Current IE=0, VCE =1/2 VCEOMAX
BD644
BD646
BD648
BD650
BD652
--0.2mA
IEBO Emitter Cutoff Current VEB=5 V, IC=0
BD644
BD646
BD648
BD650
BD652
--5.0mA
BD644 --2
BD646 ---
BD648 ---
BD650 ---
IC=4 A, IB=16 mA
BD652 ---
BD644 ---
BD646 --2
BD648 --2
BD650 --2
IC=3 A, IB=12 mA
BD652 --2
BD644 --2.5
BD646 --2.5
BD648 --2.5
BD650 --2.5
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=5 A, IB=50 mA
BD652 --2.5
V
VBE(SAT)
Base-E mitter Saturation
Voltage (*) IC=12 A, IB=120 mA
BD644
BD646
BD648
BD650
BD652
--3V
COMSET SEMICONDUCT ORS 4/5
BD643/645/647/649/651
Symbol Ratings Value Unit
BD644 --2.5
BD646 ---
BD648 ---
BD650 ---
IC=4 A, VCE=3 V
BD652 ---
BD644 ---
BD646 --2.5
BD648 --2.5
BD650 --2.5
VBE Base-Emitter Voltage (*)
IC=3 A, VCE=3 V
BD652 --2.5
V
BD644 --
BD646 --
BD648 --
BD650 --
VCE=3.0 V, IC=0.5 A
BD652 -
1900
-
BD644 750 --
BD646 ---
BD648 ---
BD650 ---
VCE=3.0 V, IC=4 A
BD652 ---
BD644 ---
BD646 --
BD648 --
BD650 --
VCE=3.0 V, IC=3 A
BD652
750
--
BD644 --
BD646 --
BD648 --
BD650 --
hFE DC Current Gain (*)
VCE=3.0 V, IC=8 A
BD652 -
1800
-
-
BD644 10 --
BD646 ---
BD648 ---
BD650 ---
VCE=3.0 V, IC=4 A, f=1MHz
BD652 ---
BD644 ---
BD646 10 --
BD648 10 --
BD650 10 --
hfe Small Signal Current Gain
VCE=3.0 V, IC=3 A, f=1MHz
BD652 10 --
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
COMSET SEMICONDUCT ORS 5/5
BD643/645/647/649/651
MECHANICAL DATA CAS E TO-220
DIMENSIONS
mm inches
A 9,86 0,39
B 15,73 0,62
C 13,37 0,52
D 6,67 0,26
E 4,44 0,17
F 4,21 0,16
G 2,99 0,11
H 17,21 0,68
L 1,29 0,05
M 3,6 0,14
N 1,36 0,05
P 0,46 0,02
R 2,1 0,08
S 5 0,19
T 2,52 0,098
U 0,79 0,03
Pin 1 : Anode 1
Pin 2 : Anode 2
Pin 3 : Gate
