
GG72120
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
ABSORPTIVE SPDT SWITCH MODULES with Bias Circuit
www.MICROSEMI.com
TM ®
RoHS Com
liant
Copyright 2006
Rev.: 2009-02-02
GUARANTEED ELECTRICAL PARAMETER S @ 25C (unless otherwise specified)
SWITCHING
SPEED2 (uS)
Model Number Frequency
Range
Insertion Loss1 (dB)
(Max) Isolation(dB)
(Min) VSWR
(Max) TRISE
(Max) TFALL
(Max)
GG72120-01 0.5 - 4.0 1.4 60 1.5:1 1.0 1.0
GG72120-02 2.0 - 8.0 1.8 55 1.7:1 1.0 1.0
GG72120-03 4.0 - 12.4 2.0 50 1.8:1 1.0 1.0
GG72120-04 8.0 - 18.0 2.5 40 1.9:1 1.0 1.0
GG72120-05 2.0 - 18.0 2.5 40 2.0:1 1.0 1.0
Notes:
1. RF Power Handling; 0.5W CW.
2. Speed: Rise time and Fall time, 1.0µS (max).
3. Required D.C. Bias: Insertion Loss, -35 mA; Isolation, +30 mA.
4. Switching Speed is measured from 10%-90% and from 90%-10% of the detected RF pulse with a 100 kHz maximum switching rate.
5. Temperature Rating: Operating, -55 to +95°C; Storage, -55 to +125°C.
6. Only the outputs are matched in the isolated state. The input is m atched only when one path is in the loss state.
ENVIRONMENTAL
These units are designed to withstand the following
environmental conditions without damag e.
ENVRONMENTAL CONDITIONS
TEST MIL-PRF METHOD CONDITION
Internal Visual 883 2017 - -
Stabilization Bake 883 1008 B
Thermal Cycle 883 1010 B
Constant Acceleration 883 2001 1 (Y1 Axis)
Seal – Fine Leak 883 1014 A1
Seal – Gross Leak 883 1014 C1
External Visual 883 2009 -
OUTLINE 210005
NOTES
1. All pins are 0.012 ±0.001" dia, 0.100" (min) long.
May be supplied with tabs, 0.025 ±0.01 x 0.006
±0.002, upon request.
2. Tolerance on 3 place decimal, ±0.003" unless
otherwise specified.
3. Case and leads gol d plated per MIL-G-45204,
Type 3, Grade A 50 µinch (min).
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