BAS116,235 - NXP - Pdf.Support

DATA SH EET

Product data sheet

Supersedes data of 1999 May 26

2003 Dec 12

DISCRETE SEMICONDUCTORS

BAS116

Low-leakage diode

ook, halfpage

M3D088

2003 Dec 12 2

NXP Semiconductors Product data sheet

Low-leakage diode BAS116

FEATURES

•Plastic SMD package

•Low leakage current: typ. 3 pA

•Switching time: typ. 0.8 µs

•Continuous reverse voltage: max. 75 V

•Repetitive peak reverse voltage: max. 85 V

•Repetitive peak forward current: max. 500 mA.

APPLICATION

•Low leakage curr ent applications in surface mounte d

circuits.

DESCRIPTION

Epitaxial medium-speed switching diode with a low

leakage curr en t in a sm all SO T2 3 plastic SMD package.

PINNING

PIN DESCRIPTION

1anode

2not connected

3cathode

lum

ns 21

Top view

MAM106

n.c. 1

Fig.1 Simplified outline (SOT23) and sy mbol.

Marking code:

JVp = made in Hong Kong; JVt = made in Malaysia;

JVW = Made in China.

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Ratin g S ystem (IEC 60134).

Note

1. Device mounted on an FR4 printed-circuit board.

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

BAS116 −plastic surfac e mounted package; 3 leads SOT23

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRRM repetitive peak rev erse voltage −85 V

VRcontinuous re ve rse volta ge −75 V

IFcontinuous for ward current see Fig.2; note 1 −215 mA

IFRM repetitive peak forward current −500 mA

IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge;

see Fig.4

tp = 1 µs−4 A

tp = 1 ms −1 A

tp = 1 s −0.5 A

Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW

Tstg storage tempe ra t u re −65 +150 °C

Tjjunction temperature −150 °C

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NXP Semiconductors Pr oduct data sheet

Low-leakage diode BAS116

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTE RISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VFforward voltage see Fig.3

IF = 1 mA −0.9 V

IF = 10 mA −1 V

IF = 50 mA −1 .1 V

IF = 150 mA −1. 25 V

IRreverse current see Fig.5

VR = 75 V 0.003 5nA

VR = 75 V; Tj = 150 °C 3 80 nA

Cddiode capacitance f = 1 MHz; VR = 0; see Fig.6 2−pF

trr reverse recove ry time when switched from IF = 10 mA to IR = 10 mA;

RL = 100 Ω; measured at IR = 1 mA; see Fig.7 0.8 3µs

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-tp) thermal resistance from junction to tie-point 330 K/W

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

2003 Dec 12 4

NXP Semiconductors Pr oduct data sheet

Low-leakage diode BAS116

GRAPHICAL DATA

handbook, halfpage

0 200

300

100

200

MLB755

100 T ( C)

amb o

(mA)

Device mounted on an FR4 printed-circuit board.

Fig.2 Maximum permissible continuo us forward

current as a function of ambient temperature. Fig.3 Forward current as a function of forward

voltage.

handbook, halfpage

0 1.6

300

100

200

MLB752 - 1

0.8 1.20.4

(mA)

V (V)

(1) (2) (3)

(1) Tj = 150 °C; typical values.

(2) Tj = 25 °C; typical values.

(3) Tj = 25 °C; maximum values.

handbook, full pagewidth

MBG704

10 tp (µs)

IFSM

(A)

102

10−1104

102103

Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of puls e duration.

Based on square wave currents; Tj = 25 °C prior to surge.

2003 Dec 12 5

NXP Semiconductors Pr oduct data sheet

Low-leakage diode BAS116

102

150 200

500

mlb754

100

10−1

10−2

10−3

(nA)

Tj (°C)

(1)

(2)

(1) Maximum values.

(2) Typical values.

VR = 75 V.

Fig.5 Reverse current as a fun ction of junc tion

temperature. Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj = 25 °C.

handbook, halfpage

01020155

MBG526

(V)

(pF)

handbook, full pagewidth

trr

(1)

IFt

output signal

trt

10%

90%

input signal

V = V I x R

RF S

R = 50

SΩIF

D.U.T.

R = 50

iΩ

SAMPLING

OSCILLOSCOPE

MGA881

Fig.7 Reverse reco very time test circuit and waveforms.

(1) IR = 1 mA.

2003 Dec 12 6

NXP Semiconductors Pr oduct data sheet

Low-leakage diode BAS116

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2003 Dec 12 7

NXP Semiconductors Pr oduct data sheet

Low-leakage diode BAS116

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this do cument was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tion.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificati on .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onv eyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property righ ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

For additional information p lease visit: http://www.nxp.com

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this documen t d oes not fo rm p ar t o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged

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under patent- or other industrial or intellectual pr operty righ ts.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the tech nical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R76/04/pp8 Date of release: 2003 Dec 12 Document orde r number: 9397 750 12391