January 1995 3
Philips Semiconductors Product specification
Quadruple exclusive-OR gate HEF4070B
gates
AC CHARACTERISTICS
VSS = 0 V; Tamb =25°C; CL= 50 pF; input transition times ≤20 ns
VDD
VSYMBOL TYP. MAX. TYPICAL EXTRAPOLATION
FORMULA
Propagation delays
In→On5 85 175 ns 58 ns +(0,55 ns/pF) CL
HIGH to LOW 10 tPHL 35 75 ns 24 ns +(0,23 ns/pF) CL
15 30 55 ns 21 ns +(0,16 ns/pF) CL
5 75 150 ns 48 ns +(0,55 ns/pF) CL
LOW to HIGH 10 tPLH 30 65 ns 19 ns +(0,23 ns/pF) CL
15 25 50 ns 17 ns +(0,16 ns/pF) CL
Output transition times 5 60 120 ns 10 ns +(1,0 ns/pF) CL
HIGH to LOW 10 tTHL 30 60 ns 9 ns +(0,42 ns/pF) CL
15 20 40 ns 6 ns +(0,28 ns/pF) CL
5 60 120 ns 10 ns +(1,0 ns/pF) CL
LOW to HIGH 10 tTLH 30 60 ns 9 ns +(0,42 ns/pF) CL
15 20 40 ns 6 ns +(0,28 ns/pF) CL
VDD
VTYPICAL FORMULA FOR P (µW)
Dynamic power 5 1100 fi+∑(foCL)×VDD2where
dissipation per 10 4900 fi+∑(foCL)×VDD2fi= input freq. (MHz)
package (P) 15 14 400 fi+∑(foCL)×VDD2fo= output freq. (MHz)
CL= load capacitance (pF)
∑(foCL) = sum of outputs
VDD = supply voltage (V)