
LESHAN RADIO COMPANY, LTD.
LMUN5311DW–1/29
1
3
2
LMUN5311DW1T1
Series
SOT-363/SC-88
6
4
5
The BR T (Bias Resistor T ransistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-
sistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
13
2
64
5
Q1
Q2
R1
R2
R1R2
XX
MARKING DIAGRAM
132
645
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
xx = Device Marking
=(See Page 2)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
MAXIMUM RATINGS (T A= 25°C unless otherwise noted, common for Q 1
and Q 2, – minus sign for Q 1(PNP) omitted)
Rating Symbol Value Unit
Collector-Base Voltage V CBO 50 Vdc
Collector-Emitter Voltage V CEO 50 Vdc
Collector Current I C100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation P D187 (Note 1.) mW
TA= 25°C
Derate above 25°C mW/°C
Thermal Resistance – R θJA 670 (Note 1.) °C/W
Junction-to-Ambient 490 (Note 2.)
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
TA= 25°C
Derate above 25°C
PD250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient RθJA 493 (Note 1.)
325 (Note 2.) °C/W
Thermal Resistance –
Junction-to-Lead RθJL 188 (Note 1.)
208 (Note 2.) °C/W
Junction and Storage
Temperature TJ, T stg –55 to +150 °C
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad