UNISONIC TECHNOLOGIES CO., LTD
2SA1837 PNP EPITAXIAL SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2013 Unisonic Technologies Co., Ltd QW-R219-002.C
POWER AMPLIFIER
APPLICATIONS DRIVER
STAGE AMPLIFIER
APPLICATIONS
FEATURES
* High Transition Frequency: fT=70MHZ (Typ.)
* Complementary to UTC 2SC4793
ORDERING INFORMATION
Order Number Package Pin Assignment Packing
Lead Free Halogen-Free 1 2 3
2SA1837L-TF3-T 2SA1837G-TF3-T TO-220F B C E Tube
2SA1837L-TF1-T 2SA1837G-TF1-T
TO-220F1 B C E Tube
Note: Pin Assignment: B: Base C: Collector E: Emitter
2SA1837 PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R219-002.C
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -230 V
Collector-Emitter Voltage VCEO -230 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1 A
Base Current IB -0.1 A
Collector Power Dissipation TA=25°C PC 2 W
TC=25°C 20
Junction Temperature TJ 150 °C
Storage Temperature Range TSTG -55 ~ 150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage BVCEO I
C= -10mA, IB=0 -230 V
Collector Cut-off Current ICBO V
CB = -230V, IE=0 -1.0 μA
Emitter Cut-off Current IEBO V
EB= -5V, IC=0 -1.0 μA
DC Current Gain hFE V
CE= -5V, IC= -100mA 100 320
Collector-Emitter Saturation Voltage VCE
(
SAT
)
I
C= -500mA, IB= -50mA -1.5 V
Base-Emitter Saturation Voltage VBE
(
SAT
)
V
CE= -5V, IC= -500mA -1.0 V
Transition Frequency fT V
CE= -10V, IC= -100mA 70 MHz
Collector Output Capacitance Cob VCB= -10V, IC=0, f=1MHz 30 pF
2SA1837 PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 4
www.unisonic.com.tw QW-R219-002.C
TYPICAL CHARACTERISTICS
0-1.4
-0.2
0
-25
-0.8
-1.0
-1.2
-0.4
-0.6
-0.2 -0.4 -0.6 -0.8 -1.0
25
Collector Current vs. Base-Emitter Voltage
TC=100°C
COMMON
EMITTER
VCE= -5V
-5
30
10
300
500
50
100
-10 -30 -100 -300 -1000
COMMON EMITTER
VCE= -10V
TC=25°C
Transition Frequency vs. Collector Current
Transition Frequency, fT (MHz)
Collector Current, IC (mA)
Collector Current, IC(A)
Base-Emitter Voltage, VBE (V)
DC Current Gain, hFE
Collector-Emitter Saturation
Voltage, VCE (sat) (V)
IC MAX. (PULSED)
IC MAX.
(CONTINUOUS)
-0.1
-0.03
-3
-5
-0.3
-0.5
-0.01
-0.05
-1
-1 -10 -100-30 -300
-3
SINGLE NONREPETITIVE
PULSE TC=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
DC OPERATION
1ms 10ms
100ms
0-4 -8
-0.2
0
-6 -10
Collector Current vs. Collector-Emitter Voltage
-0.8
-1.0
-2
-0.4
-20
-0.6
IB= -2mA
COMMON EMITTER
TC=25°C
-10
-8
-6
-4
Collector-Emitter Voltage, VCE (V)
Safe Operating Area
Collector-Emitter Voltage, VCE (V)
2SA1837 PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw QW-R219-002.C
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
