MCP73861-I/SL - MICROCHIP TECHNOLOGY

 2004-2013 Microchip Technology Inc. DS21893F-page 1

MCP73861/2/3/4

Features:

• Linear Charge Management Controllers:

- Integrated Pass Transistor

- Integrated Current Sense

- Reverse-Blocking Protection

• High-Accuracy Preset Voltage Regulation: + 0.5%

• Four Selectable Voltage Regulation Options:

- 4.1V, 4.2V – MCP73861/3

- 8.2V, 8.4V – MCP73862/4

• Programmable Charge Current: 1.2A Maximum

• Programmable Safety Charge Timers

• Preconditioning of Deeply Depleted Cells

• Automatic End-of-Charge Control

• Optional Continuous Cell Temperature Monitoring

• Charge Status Output for Direct LED Drive

• Fault Output for Direct LED Drive

• Automatic Power-Down

• Thermal Regulation

• Temperature Range: -40°C to +85°C

• Packaging: 16-Pin, 4 x 4 QFN

16-Pin SOIC

Applications:

• Lithium-Ion/Lithium-Polymer Battery Chargers

• Personal Data Assistants (PDAs)

• Cellular Telephones

• Hand-Held Instruments

• Cradle Chargers

•Digital Cameras

• MP3 Players

Description:

The MCP7386X family of devices features highly

advanced linear charge management controllers for

use in space-limited, cost-sensitive applications. The

devices combine high-accuracy, constant voltage and

current regulation, cell preconditioning, cell

temperature monitoring, advanced safety timers,

automatic charge termination, internal current sensing,

reverse-blocking protection, charge status and fault

indication in either a space-saving 16-pin 4 x 4 QFN

package, or a 16-pin SOIC package. The MCP7386X

provides a complete, fully functional, stand-alone

charge management solution with a minimum number

of external components.

The MCP73861/3 is intended for applications utilizing

single-cell Lithium-Ion or Lithium-Polymer battery

packs, while the MCP73862/4 is intended for dual

series cell Lithium-Ion or Lithium-Polymer battery

packs. The MCP73861/3 has two selectable

voltage-regulation options available (4.1V and 4.2V),

for use with either coke or graphite anodes and operate

with an input voltage range of 4.5V to 12V. The

MCP73862/4 has two selectable voltage-regulation

options available (8.2V and 8.4V), for use with coke or

graphite anodes, and operate with an input voltage

range of 8.7V to 12V.

The MCP73861/2 and MCP73863/4 differ only in the

function of the charge status output (STAT1) when a

charge cycle has been completed. The MCP73861/2

flashes the output, while the MCP73863/4 turns the

output off. Refer to Section 5.2.1 “Charge Status

Outputs (STAT1, STAT2)”.

The MCP7386X family of devices are fully specified

over the ambient temperature range of -40°C to +85°C.

Advanced Single or Dual Cell, Fully Integrated Li-Ion/Li-Polymer

Charge Management Controllers

MCP73861/2/3/4

DS21893F-page 2  2004-2013 Microchip Technology Inc.

Package Types

VDD1

VBAT3

THERM

TIMER

STAT1

STAT2 1

PROG

VDD2

VSET

VSS1

THREF

VBAT1

VBAT2

VSS2

VSS3

16-Pin SOIC16-Pin QFN

VDD2

VSS1

VSET VBAT3

VBAT2

PROG

VBAT1

THREF

THERM

TIMER

VSS3

STAT1

STAT2

VSS2

VDD2 EP

15 14 13

5678

 2004-2013 Microchip Technology Inc. DS21893F-page 3

MCP73861/2/3/4

Typical Application

Functional Block Diagram

STAT1

STAT2

VSET

VDD

VSS

TIMER

PROG

THERM

THREF

VBAT3

VBAT

–

Single

Lithium-Ion

Cell

2, 3

MCP73861/3

4, 9, 13

10, 11

6.19 kΩ

4.7µF

1.2A Lithium-Ion Battery Charger

4.7 µF

7.32 kΩ

0.1

µF Note: Pin numbers shown are for QFN

package. Please refer to Section 6.0

“Applications” for details.

–

Charge

Termination

Comparator

Voltage Control

Amplifier

–

UVLO

COMPARATOR

VUVLO

–

Temperature

Comparators

–

Bias and

Reference

Generator

VUVLO

VREF (1.2V)

Power-On

Delay

–

VREF

Oscillator

IREG/12

Constant-Voltage/

Recharge Comp.

Precondition

Control

Charge_OK

Precon

VDD

Charge Current

Control Amplifier

–

VREF

–

Precondition

Comp.

Charge Control,

Charge Timers

And Status Logic Drv Stat 2

Drv Stat 1

Charge_OK

IREG/12

VDD1

THERM

TIMER

STAT1

STAT2

VBAT3

VSS1

PROG

VSET

THREF

VBAT1

110 k Ω

10 kΩ

100 kΩ

50 kΩ

G = 0.001

11 kΩ

1kΩ

600 kΩ

(1.65 MΩ)

148.42 kΩ

1.58 kΩ

VDD2 VBAT2

300.04 kΩ

10.3 kΩ

(8.58 kΩ)

4kΩ

Direction

Control

kΩ

VSS2

VSS3

Values in ( )

reflect the

MCP73862/4

devices

MCP73861/2/3/4

DS21893F-page 4  2004-2013 Microchip Technology Inc.

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings†

VDDN...............................................................................13.5V

VBATN, VSET

, EN, STAT1, STAT2 w.r.t. VSS

.................................................................-0.3 to (VDD + 0.3)V

PROG, THREF, THERM, TIMER w.r.t. VSS............. -0.3 to 6V

Maximum Junction Temperature, TJ............Internally Limited

Storage temperature .....................................-65°C to +150°C

ESD protection on all pins:

Human Body Model (1.5 kΩ in series with 100 pF)4kV

Machine Model (200 pF, No series resistance) ...........300V

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typ.) + 0.3V] to 12V,

TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

Supply Input

Supply Voltage VDD 4.5 — 12 V MCP73861/3

8.7 — 12 V MCP73862/4

Supply Current ISS — 0.17 4 µA Disabled

— 0.53 4 mA Operating

UVLO Start Threshold VSTART 4.25 4.5 4.65 V MCP73861/3

8.45 8.8 9.05 V MCP73862/4

VDD Low-to-High

UVLO Stop Threshold VSTOP 4.20 4.4 4.55 V MCP73861/3

8.40 8.7 8.95 V MCP73862/4

VDD High-to-Low

Voltage Regulation (Constant-Voltage Mode)

Regulated Output Voltage VREG 4.079 4.1 4.121 V MCP73861/3, VSET = VSS

4.179 4.2 4.221 V MCP73861/3,VSET = VDD

8.159 8.2 8.241 V MCP73862/4, VSET = VSS

8.358 8.4 8.442 V MCP73862/4, VSET = VDD

VDD = [VREG(typ.) + 1V],

IOUT =10mA

TA = -5°C to +55°C

Line Regulation ΔVBAT/

VBAT)| /

ΔVDD

— 0.025 0.25 %/V VDD = [VREG(typ.)+1V] to 12V

IOUT = 10 mA

Load Regulation ΔVBAT/

VBAT|

—0.010.25%I

OUT = 10 mA to 150 mA

VDD = [VREG(typ.)+1V]

Supply Ripple Attenuation PSRR — 60 — dB IOUT = 10 mA, 10 Hz to 1 kHz

—42—dBI

OUT = 10 mA, 10 Hz to 10 kHz

—28—dBI

OUT = 10 mA, 10 Hz to 1 MHz

Output Reverse Leakage

Current

IDISCHARGE —0.231µAV

DD < VBAT = VREG(typ.),

VDD = 1.5 kΩ to Ground

Output Reverse Leakage

Switchover Time

IDISCHARGE

_SW

— 0 1000 ms VDD < VBAT

VDD <= 1.5 kΩ to Ground

 2004-2013 Microchip Technology Inc. DS21893F-page 5

MCP73861/2/3/4

Current Regulation (Fast Charge Constant-Current Mode)

Fast Charge Current

Regulation

IREG 85 100 115 mA PROG = OPEN

1020 1200 1380 mA PROG = VSS

425 500 575 mA PROG = 1.6 kΩ

TA= -5°C to +55°C

Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)

Precondition Current

Regulation

IPREG 5 10 15 mA PROG = OPEN

60 120 180 mA PROG = VSS

25 50 75 mA PROG = 1.6 kΩ

TA=-5°C to +55°C

Precondition Threshold

Voltage

VPTH 2.70 2.80 2.90 V MCP73861/3, VSET = VSS

2.75 2.85 2.95 V MCP73861/3, VSET = VDD

5.40 5.60 5.80 V MCP73862/4, VSET = VSS

5.50 5.70 5.90 V MCP73862/4, VSET = VDD

VBAT Low-to-High

Charge Termination

Current

ITERM 6 8.5 11 mA PROG = OPEN

70 90 120 mA PROG = VSS

32 41 50 mA PROG = 1.6 kΩ

TA=-5°C to +55°C

Automatic Recharge

Recharge Threshold

Voltage

VRTH VREG -300 mV VREG -200 mV VREG -100 mV V MCP73861/3

VREG -600 mV VREG -400 mV VREG -200 mV V MCP73862/4

VBAT High-to-Low

Thermistor Reference

Output Voltage

VTHREF 2.475 2.55 2.625 V TA = 25°C,

VDD = VREG(typ.) + 1V,

ITHREF = 0 mA

Thermistor Reference

Source Current

ITHREF 200 — — µA

Thermistor Reference Line

Regulation

ΔVTHREF/

VTHREF)|/

ΔVDD

— 0.1 0.25 %/V VDD = [VREG(typ.) + 1V] to 12V

Thermistor Reference

Load Regulation

ΔVTHREF/

VTHREF|

0.01 0.10 % ITHREF = 0 mA to 0.20 mA

Thermistor Comparator

Upper Trip Threshold VT1 1.18 1.25 1.32 V

Upper Trip Point Hysteresis VT1HYS —-50—mV

Lower Trip Threshold VT2 0.59 0.62 0.66 V

Lower Trip Point Hysteresis VT2HYS —80—mV

Input Bias Current IBIAS ——2µA

Status Indicator – STAT1, STAT2

Sink Current ISINK 4812mA

Low Output Voltage VOL — 200 400 mV ISINK = 1 mA

Input Leakage Current ILK —0.011µAI

SINK = 0 mA, VSTAT1,2 = 12V

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typ.) + 0.3V] to 12V,

TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

MCP73861/2/3/4

DS21893F-page 6  2004-2013 Microchip Technology Inc.

TEMPERATURE SPECIFICATIONS

Enable Input

Input High Voltage Level VIH 1.4 — — V

Input Low Voltage Level VIL ——0.8V

Input Leakage Current ILK —0.011µAV

ENABLE = 12V

Thermal Shutdown

Die Temperature TSD — 155 — °C

Die Temperature

Hysteresis

TSDHYS —10—°C

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typ.) + 0.3V] to 12V,

TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

AC CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typ.) + 0.3V] to 12V,

TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

UVLO Start Delay tSTART —— 5 msV

DD Low-to-High

Current Regulation

Transition Time Out of

Preconditioning

tDELAY —— 1 msV

BAT < VPTH to VBAT > VPTH

Current Rise Time Out of

Preconditioning

tRISE —— 1 msI

OUT Rising to 90% of IREG

Fast Charge Safety Timer

Period

tFAST 1.1 1.5 1.9 Hours CTIMER = 0.1 µF

Preconditioning Current Regulation

Preconditioning Charge Safety

Timer Period

tPRECON 45 60 75 Minutes CTIMER = 0.1 µF

Charge Termination

Elapsed Time Termination

Period

tTERM 2.2 3 3.8 Hours CTIMER = 0.1 µF

Status Indicators

Status Output turn-off tOFF — — 200 µs ISINK = 1mA to 0mA

Status Output turn-on tON — — 200 µs ISINK = 0mA to 1mA

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typ.) + 0.3V] to 12V.

Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V]

Parameters Sym. Min. Typ. Max. Units Conditions

Temperature Ranges

Specified Temperature Range TA-40 — +85 °C

Operating Temperature Range TJ-40 — +125 °C

Storage Temperature Range TA-65 — +150 °C

Thermal Package Resistances

Thermal Resistance, 16-lead,

4 mm x 4 mm QFN

JA — 47 — °C/W 4-Layer JC51-7 Standard Board,

Natural Convection

Thermal Resistance, 16-lead SOIC JA — 86.1 — °C/W 4-Layer JC51-7 Standard Board,

Natural Convection

 2004-2013 Microchip Technology Inc. DS21893F-page 7

MCP73861/2/3/4

2.0 TYPICAL PERFORMANCE CURVES

NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.

FIGURE 2-1: Battery Regulation Voltage

(VBAT) vs. Charge Current (IOUT).

FIGURE 2-2: Battery Regulation Voltage

(VBAT) vs. Supply Voltage (VDD).

FIGURE 2-3: Battery Regulation Voltage

(VBAT) vs. Supply Voltage (VDD).

FIGURE 2-4: Supply Current (ISS) vs.

Charge Current (IOUT).

FIGURE 2-5: Supply Current (ISS) vs.

Supply Voltage (VDD).

FIGURE 2-6: Supply Current (ISS) vs.

Supply Voltage (VDD).

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

4.193

4.195

4.197

4.199

4.201

4.203

4.205

4.207

10 100 1000

Charge Current (mA)

Battery Regulation Voltage (V)

MCP73861/3

VSET = VDD

VDD = 5.2V

3.80

3.90

4.00

4.10

4.20

4.30

4.40

4.5 6.0 7.5 9.0 10.5 12.0

Supply Voltage (V)

Battery Regulation Voltage (V)

MCP73861/3

VSET = V

IOUT

= 1000 m

4.193

4.195

4.197

4.199

4.201

4.203

4.205

4.207

4.5 6.0 7.5 9.0 10.5 12.0

Supply Voltage (V)

Battery Regulation Voltage (V)

MCP73861/3

VSET = VDD

IOUT = 10 mA

0.40

0.50

0.60

0.70

0.80

0.90

1.00

10 100 1000

Charge Current (mA)

Supply Current (mA)

MCP73861/3

VSET = V

VDD = 5.2V

0.40

0.60

0.80

1.00

1.20

1.40

1.60

4.5 6.0 7.5 9.0 10.5 12.0

Supply Voltage (V)

Supply Current (mA)

MCP73861/3

VSET = V

IOUT

= 1000 m

0.40

0.50

0.60

0.70

0.80

0.90

1.00

4.5 6.0 7.5 9.0 10.5 12.0

Supply Voltage (V)

Supply Current (mA)

MCP73861/3

VSET = V

IOUT = 10 mA

MCP73861/2/3/4

DS21893F-page 8  2004-2013 Microchip Technology Inc.

NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.

FIGURE 2-7: Output Leakage Current

(IDISCHARGE) vs. Battery Regulation Voltage

(VBAT).

FIGURE 2-8: Thermistor Reference

Voltage (VTHREF) vs. Supply Voltage (VDD).

FIGURE 2-9: Thermistor Reference

Voltage (VTHREF) vs. Thermistor Bias Current

(ITHREF).

FIGURE 2-10: Supply Current (ISS) vs.

Ambient Temperature (TA).

FIGURE 2-11: Battery Regulation Voltage

(VBAT) vs. Ambient Temperature (TA).

FIGURE 2-12: Thermistor Reference

Voltage (VTHREF) vs. Ambient Temperature (TA).

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

2.0 2.4 2.8 3.2 3.6 4.0 4.4

Battery Regulation Voltage (V)

Output Leakage Current (µA)

MCP73861/3

VSET = VDD

VDD = VSS

+25°C

-40°C

+85°C

2.500

2.510

2.520

2.530

2.540

2.550

4.56.07.59.010.512.0

Supply Voltage (V)

Therm. Reference Voltage (V)

MCP73861/3

VSET = VDD

ITHREF = 100 µA

2.500

2.505

2.510

2.515

2.520

0 25 50 75 100 125 150 175 200

Therm. Bias Current (µA)

Therm. Reference Voltage (V)

MCP73861/3

VSET = VDD

0.40

0.60

0.80

1.00

1.20

1.40

1.60

-40

-30

-20

-10

Ambient Temperature (°C)

Supply Current (mA)

MCP73861/3

VSET = VDD

IOUT = 10 mA

4.193

4.195

4.197

4.199

4.201

4.203

4.205

4.207

-40

-30

-20

-10

Ambient Temperature (°C)

Battery Regulation Voltage (V)

MCP73861/3

VSET = VDD

IOUT = 10 mA

2.500

2.505

2.510

2.515

2.520

-40

-30

-20

-10

Ambient Temperature (°C)

Therm. Reference Voltage (V)

MCP73861/3

VSET = VDD

ITHREF = 100 µA

 2004-2013 Microchip Technology Inc. DS21893F-page 9

MCP73861/2/3/4

NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.

FIGURE 2-13: Battery Regulation Voltage

(VBAT) vs. Charge Current (IOUT).

FIGURE 2-14: Battery Regulation Voltage

(VBAT) vs. Supply Voltage (VDD).

FIGURE 2-15: Battery Regulation Voltage

(VBAT) vs. Supply Voltage (VDD).

FIGURE 2-16: Supply Current (ISS) vs.

Charge Current (IOUT).

FIGURE 2-17: Supply Current (ISS) vs.

Supply Voltage (VDD).

FIGURE 2-18: Supply Current (ISS) vs.

Supply Voltage (VDD).

8.393

8.395

8.397

8.399

8.401

8.403

8.405

8.407

10 100 1000

Charge Current (mA)

Battery Regulation Voltage (V)

MCP73862/4

VSET = VDD

VDD = 9.4V

8.393

8.395

8.397

8.399

8.401

8.403

8.405

8.407

10.0 10.4 10.8 11.2 11.6 12.0

Supply Voltage (V)

Battery Regulation Voltage (V)

MCP73862/4

VSET = VDD

IOUT = 1000 mA

8.398

8.400

8.402

8.404

8.406

8.408

8.410

8.412

9.0 9.5 10.0 10.5 11.0 11.5 12.0

Supply Voltage (V)

Battery Regulation Voltage (V)

MCP73862/4

VSET = VDD

IOUT = 10 mA

0.40

0.50

0.60

0.70

0.80

0.90

1.00

10 100 1000

Charge Current (mA)

Supply Current (mA)

MCP73862/4

VSET = VDD

VDD = 9.4V

0.40

0.60

0.80

1.00

1.20

1.40

1.60

9.0 9.5 10.0 10.5 11.0 11.5 12.0

Supply Voltage (V)

Supply Current (mA)

MCP73862/4

VSET = VDD

IOUT = 1000 mA

0.40

0.50

0.60

0.70

0.80

0.90

1.00

9.0 9.5 10.0 10.5 11.0 11.5 12.0

Supply Voltage (V)

Supply Current (mA)

MCP73862/4

VSET = VDD

IOUT = 10 mA

MCP73861/2/3/4

DS21893F-page 10  2004-2013 Microchip Technology Inc.

NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.

FIGURE 2-19: Output Leakage Current

(IDISCHARGE) vs. Battery Regulation Voltage

(VBAT).

FIGURE 2-20: Thermistor Reference

Voltage (VTHREF) vs. Supply Voltage (VDD).

FIGURE 2-21: Thermistor Reference

Voltage (VTHREF) vs. Thermistor Bias Current

(ITHREF).

FIGURE 2-22: Supply Current (ISS) vs.

Ambient Temperature (TA).

FIGURE 2-23: Battery Regulation Voltage

(VBAT) vs. Ambient Temperature (TA).

FIGURE 2-24: Thermistor Reference

Voltage (VTHREF) vs. Ambient Temperature (TA).

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

4.0 4.8 5.6 6.4 7.2 8.0 8.8

Battery Regulation Voltage (V)

Output Leakage Current (µA)

MCP73862/4

VSET = VDD

VDD = VSS

+25°C

-40°C

+85°C

2.530

2.540

2.550

2.560

2.570

9.0 9.5 10.0 10.5 11.0 11.5 12.0

Supply Voltage (V)

Therm. Reference Voltage (V)

MCP73862/4

VSET = VDD

ITHREF = 100 µA

2.540

2.542

2.544

2.546

2.548

2.550

0 25 50 75 100 125 150 175 200

Thermistor Bias Current (µA)

Therm. Reference Voltage (V)

MCP73862/4

VSET = VDD

0.40

0.60

0.80

1.00

1.20

1.40

1.60

-40

-30

-20

-10

Ambient Temperature (°C)

Supply Current (mA)

MCP73862/4

VSET = VDD

IOUT = 10 mA

8.386

8.390

8.394

8.398

8.402

8.406

8.410

8.414

-40

-30

-20

-10

Ambient Temperature (°C)

Battery Regulation Voltage (V)

MCP73862/4

VSET = V

IOUT

= 10 m

2.530

2.534

2.538

2.542

2.546

2.550

-40

-30

-20

-10

Ambient Temperature (°C)

Therm. Reference Voltage (V)

MCP73862/4

VSET = V

ITHREF

= 100 µ

 2004-2013 Microchip Technology Inc. DS21893F-page 11

MCP73861/2/3/4

NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.

FIGURE 2-25: Line Transient Response.

FIGURE 2-26: Load Transient Response.

FIGURE 2-27: Power Supply Ripple

Rejection.

FIGURE 2-28: Line Transient Response.

FIGURE 2-29: Load Transient Response.

FIGURE 2-30: Power Supply Ripple

Rejection.

VDD

VBAT

MCP73861

VDD Stepped from 5.2V to 6.2V

IOUT = 10 mA

COUT = 10 µF, X7R, Ceramic

VBAT

IOUT

MCP73861

VDD 5.2V

COUT = 10 µF, X7R, Ceramic

100 mA

10 mA

-80

-70

-60

-50

-40

-30

-20

-10

0.01 0.1 1 10 100 1000

Frequency (kHz)

Attenuation (dB)

MCP73861

VDD = 5.2V

VAC = 100 mVp-p

IOUT = 10 mA

COUT = 10 μF, Ceramic

VDD

VBAT

MCP73861

VDD Stepped from 5.2V to 6.2V

IOUT = 500 mA

COUT = 10 µF, X7R, Ceramic

VBAT

500 mA IOUT

MCP73861

VDD 5.2V

COUT = 10 µF, X7R, Ceramic

10 mA

-80

-70

-60

-50

-40

-30

-20

-10

0.01 0.1 1 10 100 1000

Frequency (kHz)

Attenuation (dB)

MCP73861

VDD = 5.2V

VAC = 100 mVp-p

IOUT = 100 mA

COUT = 10 μF, X7R, Ceramic

MCP73861/2/3/4

DS21893F-page 12  2004-2013 Microchip Technology Inc.

NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode.

FIGURE 2-31: Charge Current (IOUT) vs.

Programming Resistor (RPROG).

FIGURE 2-32: Charge Current (IOUT) vs.

Ambient Temperature (TA).

200

400

600

800

1000

1200

OPEN 4.8k 1.6k 536 0

Programming Resistor ()

Charge Current (mA)

MCP73861/2/3/4

VSET = VDD

493

495

497

499

501

503

505

-40

-30

-20

-10

Charge Current (mA)

Ambient Temperature (°C)

MCP73861/2/3/4

SET

= V

RPROG = 1.6 kΩ

 2004-2013 Microchip Technology Inc. DS21893F-page 13

MCP73861/2/3/4

3.0 PIN DESCRIPTION

The descriptions of the pins are listed in Tab le 3. 1.

3.1 Voltage Regulation Selection

(VSET)

MCP73861/3: Connect VSET to VSS for 4.1V regulation

voltage, connect to VDD for 4.2V regulation voltage.

MCP73862/4: Connect VSET to VSS for 8.2V regulation

voltage, connect to VDD for 8.4V regulation voltage.

3.2 Battery Management Input Supply

(VDD2, VDD1)

A supply voltage of [VREG (typ.) + 0.3V] to 12V is

recommended. Bypass to VSS with a minimum of

4.7 µF. A 1.5 kΩ resistor should be connected from

VDD to ground when using disconnectable supplies to

force VDD < VBAT when the supply is disconnected and

assure low leakage current.

3.3 Battery Management 0V Reference

(VSS1, VSS2, VSS3)

Connect to negative terminal of battery and input

supply.

3.4 Current Regulation Set (PROG)

Preconditioning, fast and termination currents are

scaled by placing a resistor from PROG to VSS.

3.5 Cell Temperature Sensor Bias

(THREF)

THREF is a voltage reference to bias external thermis-

tor for continuous cell temperature monitoring and

prequalification.

3.6 Cell Temperature Sensor Input

(THERM)

THERM is an input for an external thermistor for contin-

uous cell-temperature monitoring and prequalification.

Connect to THREF/3 to disable temperature sensing.

3.7 Timer Set

All safety timers are scaled by CTIMER/0.1 µF.

3.8 Battery Charge Control Output

(VBAT1, VBAT2)

Connect to positive terminal of battery. Drain terminal

of internal P-channel MOSFET pass transistor. Bypass

to VSS with a minimum of 4.7 µF to ensure loop stability

when the battery is disconnected.

3.9 Battery Voltage Sense (VBAT3)

VBAT3 is a voltage sense input. Connect to positive

terminal of battery. A precision internal resistor divider

regulates the final voltage on this pin to VREG

TABLE 3-1: PIN FUNCTION TABLE

MCP73861/2/3/4

Symbol Function

QFN SOIC

13 V

SET Voltage Regulation Selection

24 V

DD1 Battery Management Input Supply

35 V

DD2 Battery Management Input Supply

46 V

SS1 Battery Management 0V Reference

5 7 PROG Current Regulation Set

6 8 THREF Cell Temperature Sensor Bias

7 9 THERM Cell Temperature Sensor Input

810 TIMERTimer Set

911 V

SS3 Battery Management 0V Reference

10 12 VBAT1 Battery Charge Control Output

11 13 VBAT2 Battery Charge Control Output

12 14 VBAT3 Battery Voltage Sense

13 15 VSS2 Battery Management 0V Reference

14 16 EN Logic Enable

15 1 STAT2 Fault Status Output

16 2 STAT1 Charge Status Output

17 – EP Exposed Pad; Battery Management 0V Reference

MCP73861/2/3/4

DS21893F-page 14  2004-2013 Microchip Technology Inc.

3.10 Logic Enable (EN)

EN is an input to force charge termination, initiate

charge, clear faults or disable automatic recharge.

3.11 Fault Status Output (STAT2)

STAT2 is a current-limited, open-drain drive for direct

connection to a LED for charge status indication. Alter-

natively, a pull-up resistor can be applied for interfacing

to a host microcontroller.

3.12 Charge Status Output (STAT1)

STAT1 is a current-limited, open-drain drive for direct

connection to a LED for charge status indication. Alter-

natively, a pull-up resistor can be applied for interfacing

to a host microcontroller.

3.13 Exposed Pad (EP)

There is an internal electrical connection between the

exposed thermal pad and VSS. The EP must be

connected to the same potential as the VSS pin on the

Printed Circuit Board (PCB).

 2004-2013 Microchip Technology Inc. DS21893F-page 15

MCP73861/2/3/4

4.0 DEVICE OVERVIEW

The MCP7386X family of devices are highly advanced

linear charge management controllers. Refer to the

functional block diagram. Figure 4-2 depicts the opera-

tional flow algorithm from charge initiation to

completion and automatic recharge.

4.1 Charge Qualification and

Preconditioning

Upon insertion of a battery, or application of an external

supply, the MCP7386X family of devices automatically

performs a series of safety checks to qualify the

charge. The input source voltage must be above the

Undervoltage Lockout (UVLO) threshold, the enable

pin must be above the logic-high level and the cell

temperature must be within the upper and lower thresh-

olds. The qualification parameters are continuously

monitored. Deviation beyond the limits automatically

suspends or terminates the charge cycle. The input

voltage must deviate below the UVLO stop threshold

for at least one clock period to be considered valid.

Once the qualification parameters have been met, the

MCP7386X initiates a charge cycle. The charge status

output is pulled low throughout the charge cycle (see

Table 5-1 for charge status outputs). If the battery

voltage is below the preconditioning threshold (VPTH),

the MCP7386X preconditions the battery with a

trickle-charge. The preconditioning current is set to

approximately 10% of the fast charge regulation

current. The preconditioning trickle-charge safely

replenishes deeply depleted cells and minimizes heat

dissipation during the initial charge cycle. If the battery

voltage has not exceeded the preconditioning thresh-

old before the preconditioning timer has expired, a fault

is indicated and the charge cycle is terminated.

4.2 Constant Current Regulation –

Fast Charge

Preconditioning ends, and fast charging begins, when

the battery voltage exceeds the preconditioning

threshold. Fast charge regulates to a constant current

(IREG), which is set via an external resistor connected

to the PROG pin. Fast charge continues until the

battery voltage reaches the regulation voltage (VREG),

or the fast charge timer expires; in which case, a fault

is indicated and the charge cycle is terminated.

4.3 Constant Voltage Regulation

When the battery voltage reaches the regulation

voltage (VREG), constant voltage regulation begins.

The MCP7386X monitors the battery voltage at the

VBAT pin. This input is tied directly to the positive

terminal of the battery.

The MCP7386X selects the voltage regulation value

based on the state of VSET

. With VSET tied to VSS, the

MCP73861/3 and MCP73862/4 regulate to 4.1V and

8.2V, respectively. With VSET tied to VDD, the

MCP73861/3 and MCP73862/4 regulate to 4.2V and

8.4V, respectively.

4.4 Charge Cycle Completion and

Automatic Re-Charge

The MCP7386X monitors the charging current during

the Constant-voltage regulation mode. The charge

cycle is considered complete when the charge current

has diminished below approximately 8% of the

regulation current (IREG), or the elapsed timer has

expired.

The MCP7386X automatically begins a new charge

cycle when the battery voltage falls below the recharge

threshold (VRTH), assuming all the qualification

parameters are met.

4.5 Thermal Regulation

The MCP7386X family limits the charge current based

on the die temperature. Thermal regulation optimizes

the charge cycle time while maintaining device reliabil-

ity. If thermal regulation is entered, the timer is automat-

ically slowed down to ensure that a charge cycle will

not terminate prematurely. Figure 4-1 depicts the

thermal regulation profile.

FIGURE 4-1: Typical Maximum Charge

Current vs. Die Temperature.

4.6 Thermal Shutdown

The MCP7386X family suspends charge if the die

temperature exceeds 155°C. Charging will resume

when the die temperature has cooled by approximately

10°C. The thermal shutdown is a secondary safety

feature in the event that there is a failure within the

thermal regulation circuitry.

200

400

600

800

1000

1200

1400

0 20 40 60 80 100 120 140

Die Temperature (° C)

Maximum Charge Current (mA)

Minimum Maximum

MCP73861/2/3/4

DS21893F-page 16  2004-2013 Microchip Technology Inc.

FIGURE 4-2: Operational Flow Algorithm.

Preconditioning Mode

Charge Current = IPREG

Reset Safety Timer

Yes

Initialize

Yes

VBAT > VPTH STAT1 = On

VBAT > VPTH

Yes

VDD < VUVLO

Safety Timer

Yes Temperature OK

STAT1 = Off

Safety Timer Suspended

Charge Current = 0

Fault

Charge Current = 0

Reset Safety Timer

or EN Low

STAT1 = Off

Constant-Current Mode

Charge Current = IREG

Reset Safety Timer

VBAT = VREG

Safety Timer

Yes Temperature OK

Constant-Voltage Mode

Output Voltage = VREG

IOUT < ITERM

Yes

VBAT < VRTH

Elapsed Timer

Charge Termination

Charge Current = 0

Reset Safety Timer

STAT1 = Flashing

Yes

Temperature OK

STAT1 = Flashing

Safety Timer Suspended

Charge Current = 0

Yes

VDD < VUVLO

or EN Low

Yes

Temperature OK

STAT1 = Off

Charge Current = 0

Yes

STAT1 = Off

VDD > VUVLO

Expired

STAT1 = Off

Safety Timer Suspended

Charge Current = 0

EN High

Expired

Note 1: The qualification parameters are continuously

monitored throughout the charge cycle. Refer to

Section 4.1, “Charge Qualification and

Preconditioning”, for details.

Note 2: The charge current will be scaled based on the

die temperature during thermal regulation. Refer

to Section 4.5, “Thermal Regulation”, for

details.

Note 1

STAT2 = OnSTAT2 = Flashing

STAT2 = Off

STAT2 = Flashing

STAT2 = Off

Note 2

STAT2 = Flashing

STAT1 = Off

(MCP73863/4)

(MCP73861/2)

STAT2 = Off

(All Devices)

 2004-2013 Microchip Technology Inc. DS21893F-page 17

MCP73861/2/3/4

5.0 DETAILED DESCRIPTION

5.1 Analog Circuitry

5.1.1 BATTERY MANAGEMENT INPUT

SUPPLY (VDD1, VDD2)

The VDD input is the input supply to the MCP7386X.

The MCP7386X automatically enters a Power-down

mode if the voltage on the VDD input falls below the

UVLO voltage (VSTOP). This feature prevents draining

the battery pack when the VDD supply is not present.

The VDD inputs should be tied to ground with a resistor

<= 1.5 kΩ to prevent VDD from floating and staying at

VBAT level if the input supply is disconnected. The

resistor will assure that VDD < VBAT when the input

supply is removed.

5.1.2 PROG INPUT

Fast charge current regulation can be scaled by placing

a programming resistor (RPROG) from the PROG input

to VSS. Connecting the PROG input to VSS allows for a

maximum fast charge current of 1.2A, typically. The

minimum fast charge current is 100 mA, set by letting

the PROG input float. The following formula calculates

the value for RPROG:

The preconditioning trickle-charge current and the

charge termination current are scaled to approximately

10% and 8% of IREG

, respectively.

5.1.3 CELL TEMPERATURE SENSOR

BIAS (THREF)

A 2.5V voltage reference is provided to bias an external

thermistor for continuous cell temperature monitoring

and prequalification. A ratio metric window comparison

is performed at threshold levels of VTHREF/2 and

VTHREF/4.

5.1.4 CELL TEMPERATURE SENSOR

INPUT (THERM)

The MCP73861/2/3/4 continuously monitors tempera-

ture by comparing the voltage between the THERM

input and VSS with the upper and lower temperature

thresholds. A negative or positive temperature coeffi-

cient, NTC or PTC thermistor and an external voltage-

divider typically develop this voltage. The temperature

sensing circuit has its own reference to which it

performs a ratio metric comparison. Therefore, it is

immune to fluctuations in the supply input (VDD). The

temperature-sensing circuit is removed from the

system when VDD is not applied, eliminating additional

discharge of the battery pack.

Figure 6-1 depicts a typical application circuit with

connection of the THERM input. The resistor values of

RT1 and RT2 are calculated with the following

equations.

For NTC thermistors:

For PTC thermistors:

Applying a voltage equal to VTHREF/3 to the THERM

input disables temperature monitoring.

5.1.5 TIMER SET INPUT (TIMER)

The TIMER input programs the period of the safety

timers by placing a timing capacitor (CTIMER) between

the TIMER input pin and VSS. Three safety timers are

programmed via the timing capacitor.

The preconditioning safety timer period:

The fast charge safety timer period:

The elapsed time termination period:

The preconditioning timer starts after qualification and

resets when the charge cycle transitions to the fast

charge, Constant-current mode. The fast charge timer

and the elapsed timer start once the MCP7386X

transitions from preconditioning. The fast charge timer

resets when the charge cycle transitions to the

Constant-voltage mode. The elapsed timer will expire

and terminate the charge if the sensed current does not

diminish below the termination threshold.

RPROG

13.2 11 IREG



–

12 IREG



1.2–

----------------------------------------=

Where:

IREG = the desired fast charge current in amps.

RPROG = measured in kΩ

RT1

COLD RHOT



RCOLD RHOT

–

----------------------------------------------=

RT2

COLD RHOT



RCOLD 3R



HOT

–

----------------------------------------------=

RT1

COLD RHOT



RHOT RCOLD

–

----------------------------------------------=

RT2

COLD RHOT



RHOT 3R



COLD

–

----------------------------------------------=

Where:

RCOLD and RHOT are the thermistor resis-

tance values at the temperature window of

interest.

tPRECON

CTIMER

0.1



-------------------1.0Hour



tFAST

CTIMER

0.1



------------------- 1.5Hours



tTERM

CTIMER

0.1



-------------------3.0Hours



MCP73861/2/3/4

DS21893F-page 18  2004-2013 Microchip Technology Inc.

During thermal regulation, the timer is slowed down

proportional to the charge current.

5.1.6 BATTERY VOLTAGE SENSE (VBAT3)

The MCP7386X monitors the battery voltage at the

VBAT3 pin. This input is tied directly to the positive

terminal of the battery pack.

5.1.7 BATTERY CHARGE CONTROL

OUTPUT (VBAT1, VBAT2)

The battery charge control output is the drain terminal

of an internal P-channel MOSFET. The MCP7386X

provides constant current and voltage regulation to the

battery pack by controlling this MOSFET in the linear

region. The battery charge control output should be

connected to the positive terminal of the battery pack.

5.2 Digital Circuitry

5.2.1 CHARGE STATUS OUTPUTS

(STAT1, STAT2)

Two status outputs provide information on the state of

charge. The current-limited, open-drain outputs can be

used to illuminate external LEDs. Optionally, a pull-up

resistor can be used on the output for communication

with a host microcontroller. Ta b l e 5 - 1 summarizes the

state of the status outputs during a charge cycle.

The flashing rate (1 Hz) is based off a timer capacitor

(CTIMER) of 0.1 µF. The rate will vary based on the

value of the timer capacitor.

During a Fault condition, the STAT1 status output will

be off and the STAT2 status output will be on. To

recover from a Fault condition, the input voltage must

be removed and then reapplied, or the enable input

(EN) must be de-asserted to a logic-low, then asserted

to a logic-high.

When the voltage on the THERM input is outside the

preset window, the charge cycle will not start, or will be

suspended. The charge cycle is not terminated and

recovery is automatic. The charge cycle will resume (or

start) once the THERM input is valid and all other

qualification parameters are met. During an invalid

THERM condition, the STAT1 status output will be off

and the STAT2 status output will flash.

5.2.2 VSET INPUT

The VSET input selects the regulated output voltage of

the MCP7386X. With VSET tied to VSS, the MCP73861/

3 and MCP73862/4 regulate to 4.1V and 8.2V, respec-

tively. With VSET tied to VDD, the MCP73861/3 and

MCP73862/4 regulate to 4.2V and 8.4V, respectively.

5.2.3 LOGIC ENABLE (EN)

The logic enable input pin (EN) can be used to termi-

nate a charge at any time during the charge cycle, as

well as to initiate a charge cycle or initiate a recharge

cycle.

Applying a logic-high input signal to the EN pin, or tying

it to the input source, enables the device. Applying a

logic-low input signal disables the device and termi-

nates a charge cycle. When disabled, the device’s

supply current is reduced to 0.17 µA, typically.

TABLE 5-1: STATUS OUTPUTS

CHARGE

CYCLE STAT1 STAT1 STAT2

Qualification Off Off

Preconditioning On Off

Constant-Current

Fast Charge

On Off

Constant-Voltage On Off

Charge Complete Flashing (1 Hz,

50% duty cycle)

(MCP73861/2) Off

(All Devices)

Off

(MCP73863/4)

Fault Off On

THERM Invalid Off Flashing (1 Hz

50% duty cycle)

Disabled – Sleep

mode

Off Off

Input Voltage Dis-

connected

(1.5KΩ Pulldown)

Off Off

Legend: Off state: Open-drain is high-impedance

On state: Open-drain can sink current

typically 7 mA

Flashing: Toggles between off state and

on state

 2004-2013 Microchip Technology Inc. DS21893F-page 19

MCP73861/2/3/4

6.0 APPLICATIONS

The MCP7386X is designed to operate in conjunction

with a host microcontroller or in stand-alone applica-

tions. The MCP7386X provides the preferred charge

algorithm for Lithium-Ion and Lithium-Polymer cells

Constant-current followed by Constant-voltage.

Figure 6-1 illustrates a typical stand-alone application

circuit, while Figures 6-2 and 6-3 illustrate the

accompanying charge profile

FIGURE 6-1: Typical Application Circuit.

FIGURE 6-2: Typical Charge Profile.

ENSTAT1

STAT2

VSET

VSS3

VDD1

VDD2

VSS2

TIMER

PROG

THERM

THREF

VBAT3

VBAT2

VBAT1

CTIMER

Unregulated

Wall Cube

RPROG

RT1

RT2

–

Single

Lithium-Ion

Cell

VSS1

MCP73861

141516

5678

1.5K

Regulation

Voltage

(VREG)

Regulation

Current

(IREG)

Transition

Threshold

(VPTH)

Precondition

Current

(IPREG)

Precondition

Safety Timer

Fast Charge

Safety Timer

Elapsed Time

Termination Timer

Charge

Voltage

Preconditioning

Mode

Constant-Current

Mode

Constant-Voltage

Mode

Charge

Current

Termination

Current

(ITERM)

MCP73861/2/3/4

DS21893F-page 20  2004-2013 Microchip Technology Inc.

FIGURE 6-3: Typical Charge Profile in Thermal Regulation.

6.1 Application Circuit Design

Due to the low efficiency of linear charging, the most

important factors are thermal design and cost, which

are a direct function of the input voltage, output current

and thermal impedance between the battery charger

and the ambient cooling air. The worst-case situation is

when the device has transitioned from the

Preconditioning mode to the Constant-current mode. In

this situation, the battery charger has to dissipate the

maximum power. A trade-off must be made between

the charge current, cost and thermal requirements of

the charger.

6.1.1 COMPONENT SELECTION

Selection of the external components in Figure 6-1 is

crucial to the integrity and reliability of the charging

system. The following discussion is intended as a guide

for the component selection process.

6.1.1.1 Current Programming Resistor

(RPROG)

The preferred fast charge current for Lithium-Ion cells

is at the 1C rate, with an absolute maximum current at

the 2C rate. For example, a 500 mAh battery pack has

a preferred fast charge current of 500 mA. Charging at

this rate provides the shortest charge cycle times

without degradation to the battery pack performance or

life.

1200 mA is the maximum charge current obtainable

from the MCP7386X. For this situation, the PROG input

should be connected directly to VSS.

6.1.1.2 Thermal Considerations

The worst-case power dissipation in the battery

charger occurs when the input voltage is at the

maximum and the device has transitioned from the Pre-

conditioning mode to the Constant-current mode. In

this case, the power dissipation is:

Regulation

Voltage

(VREG)

Regulation

Current

(IREG)

Transition

Threshold

(VPTH)

Precondition

Safety Timer

Fast Charge

Safety Timer

Elapsed Time

Termination Timer

Charge

Voltage

Preconditioning

Mode

Constant-Current

Mode

Constant-Voltage

Mode

Charge

Current

Precondition

Current

(IPREG)

Termination

Current

(ITERM)

PowerDissipation VDDMAX VPTHMIN

–IREGMAX



Where:

VDDMAX = the maximum input voltage

IREGMAX = the maximum fast charge current

VPTHMIN = the minimum transition threshold

voltage

 2004-2013 Microchip Technology Inc. DS21893F-page 21

MCP73861/2/3/4

Power dissipation with a 5V, ±10% input voltage source

is:

With the battery charger mounted on a 1 in2 pad of

1 oz. copper, the junction temperature rise is 60°C,

approximately. This would allow for a maximum operat-

ing ambient temperature of 50°C before thermal

regulation is entered.

6.1.1.3 External Capacitors

The MCP7386X is stable with or without a battery load.

In order to maintain good AC stability in the Constant-

voltage mode, a minimum capacitance of 4.7 µF is

recommended to bypass the VBAT pin to VSS. This

capacitance provides compensation when there is no

battery load. In addition, the battery and interconnec-

tions appear inductive at high frequencies. These

elements are in the control feedback loop during

Constant-voltage mode. Therefore, the bypass

capacitance may be necessary to compensate for the

inductive nature of the battery pack.

Virtually any good quality output filter capacitor can be

used, independent of the capacitor’s minimum

Effective Series Resistance (ESR) value. The actual

value of the capacitor (and its associated ESR)

depends on the output load current. A 4.7 µF ceramic,

tantalum or aluminum electrolytic capacitor at the

output is usually sufficient to ensure stability for up to a

1A output current.

6.1.1.4 Reverse-Blocking Protection

The MCP7386X provides protection from a faulted or

shorted input, or from a reversed-polarity input source.

Without the protection, a faulted or shorted input would

discharge the battery pack through the body diode of

the internal pass transistor.

6.1.1.5 Enable Interface

In the stand-alone configuration, the enable pin is

generally tied to the input voltage. The MCP7386X

automatically enters a Low-power mode when voltage

on the VDD input falls below the UVLO voltage (VSTOP),

reducing the battery drain current to 0.23 µA,typically.

6.1.1.6 Charge Status Interface

Two status outputs provide information on the state of

charge. The current-limited, open-drain outputs can be

used to illuminate external LEDs. Refer to Table 5-1 for

a summary of the state of the status outputs during a

charge cycle.

6.2 PCB Layout Issues

For optimum voltage regulation, place the battery pack

as close as possible to the device’s VBAT and VSS pins,

recommended to minimize voltage drops along the

high current-carrying PCB traces.

If the PCB layout is used as a heatsink, adding many

vias in the heatsink pad can help conduct more heat to

the backplane of the PCB, thus reducing the maximum

junction temperature.

PowerDissipation 5.5V 2.7V–575mA



1.61W==

MCP73861/2/3/4

DS21893F-page 22  2004-2013 Microchip Technology Inc.

NOTES:

 2004-2013 Microchip Technology Inc. DS21893F-page 23

MCP73861/2/3/4

7.0 PACKAGING INFORMATION

7.1 Package Marking Information

16-Lead QFN Example:

16-Lead SOIC (150 mil) Example:

XXXXXXXXXXXXX

YYWWNNN

XXXXXXXXXXXXX

MCP73861

1108256

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alphanumeric traceability code

Pb-free JEDEC designator for Matte Tin (Sn)

*This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

I/SL^^

XXXXX

XXXXXX

YWWNNN

73861

I/ML

1108

256

MCP73861/2/3/4

DS21893F-page 24  2004-2013 Microchip Technology Inc.

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EXPOSED

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NOTE 1

TOP VIEW BOTTOM VIEW

0LFURFKLS 7HFKQRORJ\ 'UDZLQJ &%

 2004-2013 Microchip Technology Inc. DS21893F-page 25

MCP73861/2/3/4

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

MCP73861/2/3/4

DS21893F-page 26  2004-2013 Microchip Technology Inc.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

 2004-2013 Microchip Technology Inc. DS21893F-page 27

MCP73861/2/3/4

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

MCP73861/2/3/4

DS21893F-page 28  2004-2013 Microchip Technology Inc.

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

 2004-2013 Microchip Technology Inc. DS21893F-page 29

MCP73861/2/3/4

APPENDIX A: REVISION HISTORY

Revision F (March 2013)

The following is the list of modifications:

1. Added the Output Reverse Leakage Switchover

Time parameter to the DC Characteristics table.

2. Updated Section 3.2.

3. Updated Section 5.1.1.

4. Updated Figure 6-1.

Revision E (April 2011)

The following is the list of modifications:

1. Updated Figure 2-4.

Revision D (December 2008)

The following is the list of modifications:

1. Updated package outline diagrams.

Revision C (August 2005)

The following is the list of modifications:

1. Added MCP73863 and MCP73864 devices

throughout data sheet.

2. Added Appendix A: Revision History.

3. Updated QFN and SOIC package diagrams.

Revision B (December 2004)

The following is the list of modifications:

Added SOIC package throughout data sheet.

Revision A (June 2004)

Original Release of this Document.

MCP73861/2/3/4

DS21893F-page 30  2004-2013 Microchip Technology Inc.

NOTES:

 2004-2013 Microchip Technology Inc. DS21893F-page 31

MCP73861/2/3/4

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, contact the Microchip sales office.

PART NO. X/XX

PackageTemperature

Range

Device

Device: MCP73861: Single-Cell Charge Controller with

Temperature Monitor

MCP73861T: Single-Cell Charge Controller with

Temperature Monitor, Tape and Reel

MCP73862: Dual Series Cells Charge Controller with

Temperature Monitor

MCP73862T: Dual Series Cells Charge Controller with

Temperature Monitor, Tape and Reel

MCP73863: Single-cell Charge Controller with

Temperature Monitor

MCP73863T: Single-Cell Charge Controller with

Temperature Monitor, Tape and Reel

MCP73864: Dual Series Cells Charge Controller with

Temperature Monitor

MCP73864T: Dual Series Cells Charge Controller with

Temperature Monitor, Tape and Reel

Temperature Range: I= -40C to +85C (Industrial)

Package: ML = Plastic Quad Flat No Lead, 4x4 mm Body (QFN),

16-lead

SL = Plastic Small Outline, 150 mm Body (SOIC),

16-lead

Examples:

a) MCP73861-I/ML: Single-Cell Controller

16LD-QFN package.

b) MCP73861T-I/ML: Tape and Reel,

Single-Cell Controller

16LD-QFN package.

c) MCP73861-I/SL: Single-Cell Controller

16LD-SOIC package.

d) MCP73861T-I/SL: Tape and Reel,

Single-Cell Controller

16LD-SOIC package.

a) MCP73862-I/ML: Dual-Cell Controller

16LD-QFN package.

b) MCP73862T-I/ML: Tape and Reel,

Dual-Cell Controller

16LD-QFN package.

c) MCP73862-I/SL: Dual-Cell Controller

16LD-SOIC package.

d) MCP73862T-I/SL: Tape and Reel,

Dual-Cell Controller

16LD-SOIC package.

a) MCP73863-I/ML: Single-Cell Controller

16LD-QFN package.

b) MCP73863T-I/ML: Tape and Reel,

Single-Cell Controller

16LD-QFN package.

c) MCP73863-I/SL: Single-Cell Controller

16LD-SOIC package.

d) MCP73863T-I/SL: Tape and Reel,

Single-Cell Controller

16LD-SOIC package.

a) MCP73864-I/ML: Dual-Cell Controller

16LD-QFN package.

b) MCP73864T-I/ML: Tape and Reel,

Dual-Cell Controller

16LD-QFN package.

c) MCP73864-I/SL: Dual-Cell Controller

16LD-SOIC package.

d) MCP73864T-I/SL: Tape and Reel,

Dual-Cell Controller

16LD-SOIC package.

MCP73861/2/3/4

DS21893F-page 32  2004-2013 Microchip Technology Inc.

NOTES:

 2004-2013 Microchip Technology Inc. DS21893F-page 33

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC,

FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,

PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash

and UNI/O are registered trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,

MTP, SEEVAL and The Embedded Control Solutions

Company are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Silicon Storage Technology is a registered trademark of

Microchip Technology Inc. in other countries.

Analog-for-the-Digital Age, Application Maestro, BodyCom,

chipKIT, chipKIT logo, CodeGuard, dsPICDEM,

dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,

ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial

Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB

Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code

Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,

PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,

Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA

and Z-Scale are trademarks of Microchip Technology

Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

GestIC and ULPP are registered trademarks of Microchip

Technology Germany II GmbH & Co. KG, a subsidiary of

Microchip Technology Inc., in other countries.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

ISBN: 9781620770405

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Microchip received ISO/TS-16949:2009 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

QUALITY MANAGEMENT S

YSTEM

CERTIFIED BY DNV

== ISO/TS 16949 ==

DS21893F-page 34  2004-2013 Microchip Technology Inc.

AMERICAS

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11/29/12