ELECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Collector - Emitter Breakdown Voltage (IC=-10mA, IB=0) V(BR)CE0 -45 - - V
Collector - Emitter Breakdown Voltage (VEB=0V, IC=-100uA) V(BR)CES -50 - - V
Emitter - Base Breakdown Voltage (IE=-10uA, IC=0) V(BR)EB0 -5.0 - - V
Emitter-Base Cutoff Current (VEB=-4V) IEBO - - -100 nA
Collector-Base Cutoff Current (VCB=-30V, IE=0) ICBO - - -100 nA
Collector Cutoff Current (VCE=-45V, VBE=0) ICES - - -100 nA
DC Current Gain BC337-16
(IC=-100mA,VCE=-1V) BC337-25
BC337-40
(IC=-300mA, VCE=-1V)
hFE
100
160
250
40
-
-
-
-
250
400
630
-
-
Collector – Emitter Saturation Voltage (IC=-500mA, IB=-50mA) VCE(SAT) - - -0.7 V
Base – Emitter Voltage (IC=-300mA, VCE=-1.0V) VBE(ON) - - -1.2 V
Collector - Base Capacitance (VCB=-10V, IE=0, f=1MHz) CCBO - 5.0 - pF
Current Gain – Bandwidth Product (IC=-10mA, VCE=-5V, f=100MHz) fT - 210 - MHz
ELECTRICAL CHARACTERISTICS CURVES
Fig. 4. Typical Capacitances
Fig. 3. BC337-40 Typical hFE vs. IC
10
100
1000
0.01 0.1 1 10 100 1000
Colle ctor Curr ent, IC (m A)
hF
TJ = 25°C
TJ = 150°C
T
= 100°C
VCE = 1V
10
100
1000
0.01 0.1 1 10 100 1000
Colle ctor Curre nt, IC (m A)
hF
TJ = 25°C
TJ = 150°C
TJ = 100°C
VCE = 1V
Fig. 2. BC337-25 Typical hFE vs. IC
10
100
1000
0.01 0.1 1 10 100 1000
Collector Current, IC (mA)
hF
TJ = 25°C
TJ = 150°C
TJ = 100°C
VCE = 1V
Fig. 1. BC337-16 Typical hFE vs. IC
1
10
100
0.1 1 10 100
Reverse Voltage, VR (V)
Capacitance, C (p
CIB (EB)
COB (EB)