PD - 97621 AUTOMOTIVE GRADE AUIRFZ34N Features l l l l l l l l l HEXFET(R) Power MOSFET Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* D V(BR)DSS 55V RDS(on) max. G S 0.040 ID 29A D Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G D S TO-220AB AUIRFZ34N G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified. Max. Parameter Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 29 ID @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current c 20 100 PD @TC = 25C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS 68 0.45 20 W W/C V mJ IDM d A EAS Single Pulse Avalanche Energy (Thermally Limited) 65 IAR Avalanche Current 16 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and 6.8 5.0 -55 to + 175 mJ V/ns dv/dt TJ TSTG c c e Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw C 300 10 lbf in (1.1N m) y Thermal Resistance Typ. Max. --- 2.2 Case-to-Sink, Flat, Greased Surface 0.50 --- Junction-to-Ambient --- 62 RJC Junction-to-Case RCS RJA g Parameter y Units C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 01/12/11 AUIRFZ34N Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 --- --- 2.0 6.5 --- --- --- --- --- --- 0.052 --- --- 0.040 --- 4.0 --- --- --- 25 --- 250 --- 100 --- -100 V V/C V S A nA Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 16A VDS = VGS, ID = 250A VDS = 25V, ID = 16A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150C VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance --- --- --- --- --- --- --- --- --- --- --- 7.0 49 31 40 4.5 34 6.8 14 --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 700 240 100 --- --- --- and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 nC ns nH pF ID = 16A VDS = 44V VGS = 10V, See Fig. 6 & 13 VDD = 28V ID = 16A RG = 18 RD = 1.8, See Fig. 10 Between lead, f f D G S Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 29 ISM (Body Diode) Pulsed Source Current --- --- 100 VSD trr Qrr ton Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 57 130 1.6 86 200 (Body Diode)c Conditions MOSFET symbol A V ns nC D showing the integral reverse G S p-n junction diode. TJ = 25C, IS = 16A, VGS = 0V TJ = 25C, IF = 16A di/dt = 100A/s f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 410H, RG = 25, IAS = 16A. (See Figure 12) ISD 16 A, di/dt 420A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. R is measured at TJ approximately 90C. 2 www.irf.com AUIRFZ34N Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 N/A Class M2 (+/-200V) AEC-Q101-002 Human Body Model Class H1A (+/-500V) AEC-Q101-001 Charged Device Model Class C5 (+/-2000V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage www.irf.com 3 AUIRFZ34N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 1 20s PULSE WIDTH TC = 25C 0.1 0.1 1 10 A 100 10 TJ = 175C 10 V DS = 25V 20s PULSE WIDTH 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25C 7 10 A 100 Fig 2. Typical Output Characteristics 2.4 6 1 VDS , Drain-to-Source Voltage (V) 100 5 20s PULSE WIDTH TC = 175C 0.1 0.1 100 Fig 1. Typical Output Characteristics 1 4.5V 1 VDS , Drain-to-Source Voltage (V) 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D TOP 10 A I D = 26A 2.0 1.6 1.2 0.8 0.4 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRFZ34N 1200 V GS , Gate-to-Source Voltage (V) 1000 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = Cds + C gd Coss 12 600 400 Crss 200 0 10 100 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 10 20 30 A 40 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) V DS = 44V V DS = 28V 16 800 1 I D = 16A 100 TJ = 175C TJ = 25C 10 100 10s 100s 10 1ms VGS = 0V 1 0.4 0.8 1.2 1.6 A 2.0 TC = 25C TJ = 175C Single Pulse 1 1 10 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com A 100 5 AUIRFZ34N RD VDS 30 VGS I D , Drain Current (A) 25 D.U.T. RG + - V DD 20 10 V Pulse Width 1 s Duty Factor 0.1 % 15 10 Fig 10a. Switching Time Test Circuit 5 VDS 0 25 50 75 100 125 150 TC , Case Temperature ( C) 90% 175 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFZ34N D.U.T. RG 10 V + V - DD IAS tp 0.01 Fig 12a. Unclamped Inductive Test Circuit E AS , Single Pulse Avalanche Energy (mJ) L VDS 140 TOP 120 BOTTOM ID 6.5A 11A 16A 100 80 60 40 20 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) V(BR)DSS tp VDD Fig 12c. Maximum Avalanche Energy Vs. Drain Current VDS IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V QGS 50K 12V .2F .3F QGD VG D.U.T. + V - DS VGS 3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform www.irf.com Fig 13b. Gate Charge Test Circuit 7 AUIRFZ34N Peak Diode Recovery dv/dt Test Circuit D.U.T* + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG V GS * + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [ VGS=10V ] *** * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD [ ] Forward Drop Inductor Curent Ripple 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-Channel HEXFETS 8 www.irf.com AUIRFZ34N TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRFZ34N YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRFZ34N Ordering Information 10 Base part number Package Type Standard Pack AUIRFZ34N TO-220 Form Tube Complete Part Number Quantity 50 AUIRFZ34N www.irf.com AUIRFZ34N IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 11