MIG100J101H
2001-05-29
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TOSHIBA Intelligent Power Module Silicon N Channel IGBT
MIG100J101H
High Power Switching Applications
Motor Control Applications
l Integrates inverter & control circuits (IGBT drive units, protection units for over-current, under-voltage &
over-temperature) in one package.
l The electrodes are isolated from case.
l High speed type IGBT : VCE (sat) = 2.5 V (Max.)
toff = 3.0 µs (Max.)
trr = 0.30 µs (Max.)
l Outline : TOSHIBA 2-110A1A
l Weight : 520 g
Equivalent Circuit
1. GND (U) 2. IN (U) 3. VD (U) 4. GND (V) 5. IN (V) 6. VD (V)
7. GND (W) 8. IN (W) 9. VD (W) 10. GND (L) 11. VD (L) 12. OPEN
13. IN (X) 14. IN (Y) 15. IN (Z) 16. FO
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MIG100J101H
2001-05-29
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Maximum Ratings (Tj = 25°C)
Stage Characteristic Condition Symbol Ratings Unit
Supply voltage P-N power terminal VCC 450 V
Collector-emitter voltage V
CES 600 V
Collector current Tc = 25°C, DC IC 100 A
Forward current Tc = 25°C, DC IF 100 A
Collector power dissipation Tc = 25°C PC 300 W
Inverter
Junction temperature T
j 150 °C
Control supply voltage VD-GND terminal VD 20 V
Input voltage IN-GND terminal VIN 20 V
Fault output voltage FO-GND (L) terminal VFO 20 V
Control
Fault output current FO sink current IFO 14 mA
Operating temperature TC 20 ~ +100 °C
Storage temperature range T
stg 40 ~ +125 °C
Isolation voltage AC 1 minute, VISO 2500 V
Module
Screw torque M5 3 N·m
Electrical Characteristics (Tj = 25°C)
a. Inverter Stage
Characteristic Symbol Test Condition Min Typ. Max Unit
Tj = 25°C 1
Collector cut-off current ICEX VCE = 600 V
Tj = 125°C 20
mA
Tj = 25°C 2.0 2.5
Collector-emitter saturation
voltage VCE (sat) VD = 15 V, IC = 100 A
VIN = 15 V 0 V Tj = 125°C 2.0
V
Forward voltage VF IF = 100 A 2.1 3.3 V
ton 1.0 2.0
toff 1.7 3.0
tf 0.2 0.5
Switching time
trr
VCC = 300 V, IC = 100 A
VD = 15 V, VIN = 15 V 0 V
Inductive load
(Note 1)
0.1 0.3
µs
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MIG100J101H
2001-05-29
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b. Control Stage
(Tj = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
High side ID (H) 8
Control circuit
current Low side ID (L)
VD = 15 V
24
mA
Input-on signal voltage VIN (on) VD = 15 V, IC = 100 mA 1.3 1.5 1.7 V
Input-off signal voltage VIN (off) VD = 15 V, IC = 100 mA 2.2 2.5 2.8 V
Protection IFO (on) 8 10 12
Fault output
current Normal IFO (off)
VD = 15 V
1
mA
Over current
protection
trip level
Inverter OC VD = 15 V, Tj = 125°C 160 200 A
Short current
protection
trip level
Inverter SC VD = 15 V, Tj = 125°C 240 300 A
Over current cut-off time toff (OC) VD = 15 V 5 µs
Trip level OT 110 118 125
Over
temperature
protection Reset level OTr
Case temperature
98
°C
Trip level UV 11.0 12.0 12.5
Control supply
under voltage
protection Reset level UVr
12.5
V
Fault output pulse width tFO VD = 15 V 1 2 3 ms
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MIG100J101H
2001-05-29
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c. Thermal Resistance
(Tj = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Inverter IGBT stage 0.418
Junction to case thermal resistance Rth (j-c)
Inverter FRD stage 1.000
°C / W
Case to fin thermal resistance Rth (c-f) Compound is applied 0.05 °C / W
Note 1: Switching time test circuit & timing chart
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MIG100J101H
2001-05-29
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MIG100J101H
2001-05-29
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MIG100J101H
2001-05-29
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Package Dimensions: TOSHIBA 2-110A1A
Unit: mm
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MIG100J101H
2001-05-29
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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
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· The information contained herein is subject to change without notice.
000707EA
A
RESTRICTIONS O N PRODUCT USE
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