SEMiX101GD12E4s
© by SEMIKRON Rev. 0 – 05.05.2010 1
SEMiX® 13
GD
Trench IGBT Modules
SEMiX101GD12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1200 V
ICTj= 175 °C Tc=25°C 160 A
Tc=80°C 123 A
ICnom 100 A
ICRM ICRM = 3xICnom 300 A
VGES -20 ... 20 V
tpsc
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj= 150 °C 10 µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Tc=25°C 121 A
Tc=80°C 91 A
IFnom 100 A
IFRM IFRM = 3xIFnom 300 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 550 A
Tj-40 ... 175 °C
Module
It(RMS) 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=100A
VGE =15V
chiplevel
Tj=25°C 1.8 2.05 V
Tj= 150 °C 2.2 2.4 V
VCE0 Tj=25°C 0.8 0.9 V
Tj= 150 °C 0.7 0.8 V
rCE VGE =15V Tj=25°C 10.0 11.5 mΩ
Tj= 150 °C 15.0 16.0 mΩ
VGE(th) VGE=VCE, IC=3.8mA 5 5.8 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj= 150 °C mA
Cies VCE =25V
VGE =0V
f=1MHz 6.2 nF
Coes f=1MHz 0.41 nF
Cres f=1MHz 0.34 nF
QGVGE =- 8 V...+ 15 V 565 nC
RGint Tj=25°C 7.50 Ω
td(on) VCC = 600 V
IC=100A
RG on =1Ω
RG off =1Ω
di/dton = 3100 A/µs
di/dtoff = 1200 A/µs
Tj= 150 °C 187 ns
trTj= 150 °C 35 ns
Eon Tj= 150 °C 10.8 mJ
td(off) Tj= 150 °C 467 ns
tfTj= 150 °C 94 ns
Eoff Tj= 150 °C 13.3 mJ
Rth(j-c) per IGBT 0.27 K/W
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SEMiX101GD12E4s
2 Rev. 0 – 05.05.2010 © by SEMIKRON
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
VF = VEC IF=100A
VGE =0V
chip
Tj=25°C 2.2 2.52 V
Tj= 150 °C 2.1 2.5 V
VF0 Tj=25°C 1.1 1.3 1.5 V
Tj= 150 °C 0.7 0.9 1.1 V
rFTj=25°C 8.0 9.0 10.2 mΩ
Tj= 150 °C 10.5 12.5 13.7 mΩ
IRRM IF=100A
di/dtoff = 3000 A/µs
VGE =-15V
VCC = 600 V
Tj= 150 °C 95 A
Qrr Tj= 150 °C 16 µC
Err Tj= 150 °C 6.5 mJ
Rth(j-c) per diode 0.48 K/W
Module
LCE 20 nH
RCC'+EE' res., terminal-chip TC=25°C 0.7 mΩ
TC= 125 °C 1mΩ
Rth(c-s) per module 0.04 K/W
Msto heat sink (M5) 3 5 Nm
Mtto terminals (M6) 2.5 5 Nm
Nm
w350 g
Temperatur Sensor
R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2% K
SEMiX® 13
GD
Trench IGBT Modules
SEMiX101GD12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
http://store.iiic.cc/
SEMiX101GD12E4s
© by SEMIKRON Rev. 0 – 05.05.2010 3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
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SEMiX101GD12E4s
4 Rev. 0 – 05.05.2010 © by SEMIKRON
Fig. 7: Typ. switching times vs. ICFig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
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SEMiX101GD12E4s
© by SEMIKRON Rev. 0 – 05.05.2010 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
SEMiX 13
spring configuration
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