BL Galaxy Electrical Production specification
NPN Silicon Epitaxial Planar Transistor
BC846W/BC847W/BC848W
Document number: BL/SSSTF045 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown
voltage V(BR)CBO
IC=100μA,IE=0 BC846W
BC847W
BC848W
80
50
30
V
Collector-emitter
breakdown voltage V(BR)CEO
I
C=1mA,IB=0 BC846W
BC847W
BC848W
65
45
30
V
Emitter-base breakdown
voltage V(BR)EBO
IE=100μA,IC=0 BC846W
BC847W
BC848W
6
6
5
V
Collector cut-off current ICBO VCB=30V,IE=0 15 nA
Emitter cut-off current IEBO VEB=5V,IC=0 100 nA
VCE=5V,IC=10μA
BC846AW,BC847AW
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
90
150
270
DC current gain hFE VCE=2V,IC=100mA
BC846AW,BC847AW
BC846BW,BC847BW,BC848BW
BC847CW,BC848CW
110
200
420
180
290
520
220
450
800
Collector-emitter
saturation voltage VCE(sat) I
C=10mA, IB= 0.5mA 90 250 mV
Base-emitter saturation
voltage VBE(sat) I
C=10mA, IB= 0.5mA 700 V
Transition frequency fT VCE=5V,IC=10mA,f=100MHz 100 MHz
Collector capacitance CC VCB=10V,IE=0,f=1MHz 3 pF