1Publication Order Number:
RHRP3060/D
©2005 Semiconductor Components Industries, LLC.
November-2017, Rev. 3
RHRP3060 — Hyperfast Diode
RHRP3060
30 A, 600 V Hyperfast Diodes
Features
• Hyperfast Recovery trr = 45 ns (@ IF = 30 A)
• Max Forward Voltage, VF = 2.1 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
•RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Informations
Part Number Package Brand
RHRP3060 TO-220AC-2L RHRP3060
Description
The RHRP3060 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are intended to
be used as freewheeling clamping diodes and diodes in a
variety of switching power supplies and other power
switching applications. Their low stored charge and
hyperfast soft recovery minimize ringing and electrical noise
in many power switching circuits reducing power loss in the
switching transistors.
TO-220 1. Cathode 2. Anode
Pin Assignments
Absolute Maximum Ratings
Symbol Parameter RHRP3060 Unit
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VRDC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current (TC = 120C) 30 A
IFRM Repetitive Peak Surge Current (Square Wave, 20KHz) 70 A
IFSM Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60Hz)
325 A
PDMaximum Power Dissipation 125 W
EAVL Avalanche Energy (See Figures 10 and 11) 20 mJ
TJ, TSTG Operating and Storage Temperature -65 to 175 C
RHRP3060 — Hyperfast Diode
www.onsemi.com
2
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol Test Conditions RHRP3060 Unit
Min. Typ. Max.
VFIF = 30 A - - 2.1 V
IF = 30 A, TC = 150C - - 1.7 V
IRVR = 400 V - - - A
VR = 600 V - - 250 A
VR = 400 V, TC = 150C - - - mA
VR = 600 V, TC = 150C - - 1.0 mA
trr IF = 1 A, dlF/dt = 200 A/s - - 40 ns
IF = 30 A, dlF/dt = 200 A/s - - 45 ns
taIF = 30 A, dlF/dt = 200 A/s - 22 -ns
tbIF = 30 A, dlF/dt = 200 A/s - 18 -ns
QRR IF = 30 A, dlF/dt = 200 A/s - 100 -nC
CJVR = 600 V, IF = 0 A -85 -pF
RJC - - 1.2 C/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300s, D = 2%)
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RJC = Thermal resistance junction to case.
pw = pulse width.
D = Duty cycle.
RHRP3060 — Hyperfast Diode
www.onsemi.com
3
Typical Performance Characteristics
Figure 1. Forward Current vs Forward Voltage
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
100
10
012
300
34
25oC
100C
175C
Figure 2. Reverse Currnt vs Reverse Voltage
VR, REVERSE VOLTAGE (V)
0 200 400 600300 500
2000
0.01
0.1
100
10
IR, REVERSE CURRENT (μA)
100
1
175C
100C
25C
Figure 3. trr, ta and tb Curves vs
Forward Current
IF, FORWARD CURRENT (A)
1
0
20
10
30
30
50
t, RECOVERY TIMES (ns)
10
40
trr
ta
tb
TC = 25C, dlF/dt = 200A/s
Figure 4. trr, ta and tb Curves vs
Forward Current
IF, FORWARD CURRENT (A)
0
40
20
301
60
80
t, RECOVERY TIMES (ns)
10
100
trr
ta
tb
TC = 100C, dlF/dt = 200A/s
Figure 5. trr, ta and tb Curves vs
Forward Current
IF, FORWARD CURRENT (A)
0
50
25
30
1
100
75
t, RECOVERY TIMES (ns)
10
125
150
trr
ta
tb
TC = 175C, dlF/dt = 200A/s
Figure 6. Current Derating Curve
30
5
0150100 175125
10
15
20
DC
T
C
, CASE TEMPERATURE (
o
C)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
25
75
SQ.WAVE
RHRP3060 — Hyperfast Diode
www.onsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Junction Capacitance vs
Reverse Voltage
VR, REVERSE VOLTAGE (V)
50
25
100
0 50 150 200
CJ, JUNCTION CAPACITANCE (pF)
150
75
125
0
100
Test Circuit and Waveforms
Figure 8. trr Test Circuit
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
Figure 9. trr Waveforms and Definitions
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
Figure 10. Avalanche Energy Test Circuit
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
Figure 11. Avalanche Current and Voltage
Waveforms
IV
t0t1t2
IL
VAVL
t
IL
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
❖
