PESD5V0X1BQ,115 - NEXPERIA

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1. Product proﬁle

1.1 General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in

small Surface-Mounted Device (SMD) plastic packages designed to protect one signal

line from the damage caused by ESD and other transients.

The devices may also be used for unidirectional ESD protection of up to two signal lines.

1.2 Features

1.3 Applications

PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

Rev. 01 — 30 October 2008 Product data sheet

Table 1. Product overview

Type number Package Package conﬁguration

NXP JEDEC

PESD5V0X1BQ SOT663 - ultra small and ﬂat lead

PESD5V0X1BT SOT23 TO-236AB very small

nBidirectional ESD protection of one line nESD protection up to 9 kV

nUnidirectional ESD protection of up to

two lines

nIEC 61000-4-2; level 4 (ESD)

nUltra low diode capacitance: Cd= 0.9 pF nAEC-Q101 qualiﬁed

nVery low leakage current: IRM =1nA

nUSB interfaces nSubscriber Identity Module (SIM) card

protection

nAntenna protection nComputers, peripherals and printers

nRadio Frequency (RF) protection nCellular handsets and accessories

n10/100/1000 Mbit/s Ethernet nPortable electronics

nFireWire nCommunication systems

nAsymmetric Digital Subscriber Line

(ADSL)

nAudio and video equipment

nHigh-speed data lines

Product data sheet Rev. 01 — 30 October 2008 2 of 13

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

1.4 Quick reference data

[1] Bidirectional conﬁguration: measured from pin 1 to 2 or pin 2 to 1.

[2] Unidirectional conﬁguration: measured from pin 1 to 3 or pin 2 to 3.

2. Pinning information

3. Ordering information

Table 2. Quick reference data

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff voltage - - 5 V

Cddiode capacitance f = 1 MHz; VR=0V [1] - 0.9 1.3 pF

[2] - 2 2.6 pF

Table 3. Pinning

Pin Description Simpliﬁed outline Graphic symbol

PESD5V0X1BQ

1 cathode (diode 1)

2 cathode (diode 2)

3 common anode

PESD5V0X1BT

1 cathode (diode 1)

2 cathode (diode 2)

3 common anode

006aaa154

Table 4. Ordering information

Type number Package

Name Description Version

PESD5V0X1BQ - plastic surface-mounted package; 3 leads SOT663

PESD5V0X1BT - plastic surface-mounted package; 3 leads SOT23

Product data sheet Rev. 01 — 30 October 2008 3 of 13

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

[1] Device stressed with ten non-repetitive ESD pulses.

Table 5. Marking codes

Type number Marking code[1]

PESD5V0X1BQ E6

PESD5V0X1BT U3*

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per device

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Table 7. ESD maximum ratings

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Max Unit

Per diode

VESD electrostatic discharge voltage IEC 61000-4-2

(contact discharge) [1] -9kV

MIL-STD-883 (human

body model) -10kV

Table 8. ESD standards compliance

Standard Conditions

Per diode

IEC 61000-4-2; level 4 (ESD) > 8 kV (contact)

MIL-STD-883; class 3 (human body model) > 4 kV

Product data sheet Rev. 01 — 30 October 2008 4 of 13

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

6. Characteristics

[1] Bidirectional conﬁguration: measured from pin 1 to 2 or pin 2 to 1.

[2] Unidirectional conﬁguration: measured from pin 1 to 3 or pin 2 to 3.

Fig 1. ESD pulse waveform according to IEC 61000-4-2

001aaa631

IPP

100 %

90 %

30 ns 60 ns

10 %

tr = 0.7 ns to 1 ns

Table 9. Characteristics

amb

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Per diode

VRWM reverse standoff

voltage --5V

IRM reverse leakage current VRWM = 5 V - 1 100 nA

VBR breakdown voltage IR= 5 mA 5.8 7.5 9.5 V

Cddiode capacitance f=1MHz

VR=0V [1] - 0.9 1.3 pF

[2] - 2 2.6 pF

VR=5V [1] - 0.8 1.2 pF

[2] - 1.7 2.3 pF

rdif differential resistance IR= 1 mA - - 100 Ω

Product data sheet Rev. 01 — 30 October 2008 5 of 13

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

bidirectional conﬁguration

f = 1 MHz; Tamb =25°Cunidirectional conﬁguration

f = 1 MHz; Tamb =25°C

Fig 2. Diode capacitance as a function of reverse

voltage; typical values Fig 3. Diode capacitance as a function of reverse

voltage; typical values

Fig 4. V-I characteristics for a bidirectional

ESD protection diode Fig 5. V-I characteristics for a unidirectional

ESD protection diode

VR (V)

054231

006aab249

0.88

0.92

0.84

0.96

1.0

(pF)

0.80

VR (V)

054231

006aab348

1.8

1.7

1.9

2.0

(pF)

1.6

006aaa676

−VCL −VBR −VRWM VCL

VBR

VRWM

−IRM

IRM

−IR

−IPP

IPP

−+

006aaa407

−VCL −VBR −VRWM −IRM

−IR

−IPP

P-N

−+

Product data sheet Rev. 01 — 30 October 2008 6 of 13

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

Fig 6. ESD clamping test setup and waveforms

006aab336

50 Ω

DUT

(DEVICE

UNDER

TEST)

GND

450 ΩRG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

CZ = 150 pF; RZ = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10×

ATTENUATOR

GND

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

unclamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network) clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

vertical scale = 2 kV/div

horizontal scale = 15 ns/div vertical scale = 20 V/div

horizontal scale = 100 ns/div

vertical scale = 20 V/div

horizontal scale = 100 ns/div

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

Product data sheet Rev. 01 — 30 October 2008 7 of 13

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

7. Application information

PESD5V0X1BQ and PESD5V0X1BT are designed for the protection of one bidirectional

data or signal line from the damage caused by ESD. The devices may be used on lines

where the signal polarities are both, positive and negative with respect to ground.

PESD5V0X1BQ and PESD5V0X1BT may also be used for the protection of two

unidirectional data or signal lines, which have positive signal polarities with respect to

ground.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD and Electrical Fast

Transient (EFT). The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

vias.

8. Test information

8.1 Quality information

This product has been qualiﬁed in accordance with the Automotive Electronics Council

(AEC) standard

Q101 - Stress test qualiﬁcation for discrete semiconductors

, and is

suitable for use in automotive applications.

Fig 7. Application diagram

006aab252

bidirectional protection

of one line

DUT

line 1 to be protected

GND

DUT

line 1 to be protected

unidirectional protection

of two lines

line 2 to be protected

GND

Product data sheet Rev. 01 — 30 October 2008 8 of 13

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 8. Package outline PESD5V0X1BQ (SOT663) Fig 9. Package outline

PESD5V0X1BT (SOT23/TO-236AB)

Dimensions in mm 02-05-21

1.7

1.5

1.7

1.5

1.3

1.1

0.18

0.08

0.33

0.23

0.5

0.6

0.5

0.3

0.1

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1 1.4

1.2

0.48

0.38 0.15

0.09

Table 10. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 4000 8000 10000

PESD5V0X1BQ SOT663 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

PESD5V0X1BT SOT23 4 mm pitch, 8 mm tape and reel -215 - - -235

Product data sheet Rev. 01 — 30 October 2008 9 of 13

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

11. Soldering

Reﬂow soldering is the only recommended soldering method.

Fig 10. Reﬂow soldering footprint PESD5V0X1BQ (SOT663)

Fig 11. Reﬂow soldering footprint PESD5V0X1BT (SOT23/TO-236AB)

solder lands

placement area

occupied area

solder paste

sot663_fr

2.45

1.6

20.8

0.5

(3×)

0.5

(3×)

0.55

(3×)

0.55

(3×)

1.9

0.6

(3×)

1.65

Dimensions in mm

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

Product data sheet Rev. 01 — 30 October 2008 10 of 13

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

Fig 12. Wave soldering footprint PESD5V0X1BT (SOT23/TO-236AB)

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 01 — 30 October 2008 11 of 13

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

12. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD5V0X1BQ_PESD5V0X1BT_1 20081030 Product data sheet - -

Product data sheet Rev. 01 — 30 October 2008 12 of 13

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Deﬁnitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

ESD protection devices — These products are only intended for protection

against ElectroStatic Discharge (ESD) pulses and are not intended for any

other usage including, without limitation, voltage regulation applications. NXP

Semiconductors accepts no liability for use in such applications and therefore

such use is at the customer’s own risk.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Deﬁnition

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development.

Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation.

Product [short] data sheet Production This document contains the product speciﬁcation.

NXP Semiconductors PESD5V0X1BQ; PESD5V0X1BT

Ultra low capacitance bidirectional ESD protection diodes

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 30 October 2008

Document identifier: PESD5V0X1BQ_PESD5V0X1BT_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 7

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information. . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13