1N4933 thru 1N4937
Document Number 88508
10-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AL (DO-41)
Fast Switching Plastic Rectifier
Major Ratings and Characteristics
IF(AV) 1.0 A
VRRM 50 V to 600 V
IFSM 30 A
trr 200 ns
IR5.0 µA
VF1.2 V
Tj max. 150 °C
Features
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer and Telecommunication.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Mechanical Data
Case: DO-204AL, molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter Symbol 1N4933 1N4934 1N4935 1N4936 1N4937 Unit
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 V
Maximum RMS voltage VRMS 35 70 145 280 420 V
Maximum DC blocking voltage VDC 50 100 200 400 600 V
Maximum average forward rectified current 0.375" (9.5 mm)
lead length at TA= 75 °C
IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM 30 A
Maximum reverse recovery current (1) IRM 2.0 A
Operating junction and storage temperature range TJ, TSTG - 50 to + 150 °C
www.vishay.com
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Document Number 88508
10-Oct-05
1N4933 thru 1N4937
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Note:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter Test condition Symbol 1N4933 1N4934 1N4935 1N4936 1N4937 Unit
Maximum instantaneous
forward voltage
at 1.0 A VF 1.2 V
Maximum DC reverse current
at rated DC blocking voltage
TA= 25 °C
TA= 100 °C
IR 5.0
100
µA
Maximum reverse recovery
time
IF = 1.0 A, VR = 30 V,
di/dt = 50 A/µs, Irr = 10 % IRM
trr 200 ns
Typical junction capacitance at 4.0 V, 1 MHz CJ 12 pF
Parameter Symbol 1N4933 1N4934 1N4935 1N4936 1N4937 Unit
Typical thermal resistance (1) RθJA
RθJL
55
25
°C/W
Figure 1. Forward Current Derating Curves
Ambient Temperature ( °C)
Average Forward Rectified Current (A)
025 50 75 100 125 150 175
0
0.2
0.4
0.6
0.8
1.0
CapacitiveLoad
5.0
10
20
I(pk)
I(AV)
=π
I(pk)
I(AV)
0.375" (9.5mm)
Lead Length
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
Peak Forward Surge Current (A)
110 100
0
10
20
30
1.0 Cycle
TA = 75 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
1N4933 thru 1N4937
Document Number 88508
10-Oct-05
Vishay General Semiconductor
www.vishay.com
3
Package outline dimensions in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
InstantaneousForward Voltage (V)
InstantaneousForward Current (A)
0.6 0.81.0 1.2 1.4 1.6 1.82.0
0.01
0.1
1
10
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
20 60 80100
0.01
1
10
100
040
0.1
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
TJ = 100 °C
TJ = 25 °C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0.1 110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
t, Pulse Duration (sec.)
Typical Thermal Impedance (°CW)
0.01 0.1 110 100
0.1
1
10
100
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028(0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
DIA.
DO-204AL (DO-41)
NOTE: Lead diameter is for suffix “E” part numbers
0.026 (0.66)
0.023 (0.58)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
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