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Page 1
HITFET
=
==
=
BTS 117
Smart Lowside Power Switch
Features
• Logic Level Input
• Input Protection (ESD)
•=Thermal shutdown with latch
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
Product Summary
Drain source voltage VDS 60 V
On-state resistance RDS
(
on
)
100 mΩ
Current limit ID
(
lim
)
7 A
Nominal load current ID
(
ISO
)
3.5 A
Clamping energy E
A
S1000 mJ
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS chip on chip tech-
nology. Fully protected by embedded protected functions.
protection
Overvoltage
Drain
IN
ESD
HITFET
Source
Current
1
3
Over-
protection
temperature Short circuit
protection
+
dv/dt
lim itatio n lim itation
Vbb
Short circuit
protection
LOAD
2
Overload
protection
M
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BTS 117
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Value Unit
Drain source voltage VDS 60 V
Drain source volta
g
e for short circuit
p
rotection VDS
(
SC
)
32
Continuous input current 1)
-0.2V ≤ VIN ≤ 10V
VIN < -0.2V or VIN > 10V
IIN
no limit
| IIN | ≤ 2
mA
Operating temperature T
j
- 40 ... +150 °C
Storage temperature Tst
g
- 55 ... +150
Power dissipation
TC = 25 °C
Ptot 50 W
Unclamped single pulse inductive energy
ID(ISO) = 3.5 A
EAS 1000 mJ
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
VESD 3000 V
Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 Ω, ID=0,5*3.5A
td = 400 ms, RI = 2 Ω, ID= 3.5A
VLD
75
70
DIN humidity category, DIN 40 040 E
IEC climatic category; DIN IEC 68-1 40/150/56
Thermal resistance
junction - case: RthJC 2.5 K/W
junction - ambient: RthJ
75
SMD version, device on PCB: 3) RthJ
45
1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3).
2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Drain connection.
PCB mounted vertical without blown air.
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BTS 117
Electrical Characteristics
Parameter Symbol Values Unit
at Tj=25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
Tj = - 40 ...+ 150°C, ID = 10 mA
VDS(AZ) 60 - 73 V
Off state drain current
VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V
IDSS - - 5 µA
Input threshold voltage
ID = 0.7 mA
VIN(th) 1.3 1.7 2.2 V
Input current - normal operation, ID<ID(lim):
VIN = 10 V
IIN(1) - 30 60 µA
Input current - current limitation mode, ID=ID(lim):
VIN = 10 V
IIN(2) - 120 300
Input current - after thermal shutdown, ID=0 A:
VIN = 10 V
IIN(3) 800 2200 4000
Input holding current after thermal shutdown1)
Tj = 25 °C
Tj = 150 °C
IIN(H)
500
300
-
-
-
-
On-state resistance
VIN = 5 V, ID = 3.5 A, Tj = 25 °C
VIN = 5 V, ID = 3.5 A, Tj = 150 °C
RDS(on)
-
-
90
180
120
240
mΩ
On-state resistance
VIN = 10 V, ID = 3.5 A, Tj = 25 °C
VIN = 10 V, ID = 3.5 A, Tj = 150 °C
RDS(on)
-
-
80
160
100
200
Nominal load current (ISO 10483)
VIN = 10 V, VDS = 0.5 V, TC = 85 °C
ID(ISO) 3.5 - - A
1If the input current is limited by external components, low drain currents can flow and heat the device.
Auto restart behaviour can occur.
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BTS 117
Electrical Characteristics
Parameter Symbol Values Unit
at Tj=25°C, unless otherwise specified min. typ. max.
Characteristics
Initial peak short circuit current limit
VIN = 10 V, VDS = 12 V
ID(SCp) - 25 - A
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C
ID(lim) 7 10 15
Dynamic Characteristics
Turn-on time VIN to 90% ID:
RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V
ton - 40 70 µs
Turn-off time VIN to 10% ID:
RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V
toff - 70 150
Slew rate on 70 to 50% Vbb:
RL = 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V
-dVDS/dton - 1 3 V/µs
Slew rate off 50 to 70% Vbb:
RL = 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V
dVDS/dtoff - 1 3
Protection Functions
Thermal overload trip temperature T
j
t150 165 - °C
Unclamped single pulse inductive energy
ID = 3.5 A, Tj = 25 °C, Vbb = 32 V
ID = 3.5 A, Tj = 150 °C, Vbb = 32 V
EAS
1000
225
--
--
--
--
mJ
Inverse Diode
Inverse diode forward voltage
IF = 5*3.5A, tm = 300 µS, VIN = 0 V
VSD - 1 - V
1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
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BTS 117
Block Diagramm
Terms Inductive and overvoltage output clamp
HITFET
IN D
VIN
IDVDS
1
IIN
S
Vbb
RL
2
3HITFET
VZD
S
Short circuit behaviour
VIN
ID
ID(SCp)
t 0 tm t 2
ID(Lim)
t 1
Input circuit (ESD protection)
IN
ESD-ZD I
Source
ESD zener diodes are not designed
for DC current > 2 mA @ VIN>10V. t0: Turn on into a short circuit
tm: Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
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BTS 117
On-state resistance
RON = f(Tj); ID=3.5A; VIN=10V
-50 -25 0 25 50 75 100 °C 150
Tj
0
25
50
75
100
125
150
Ω
200
RDS(on)
typ.
max.
Maximum allowable power dissipation
Ptot = f(Tc)
0 20 40 60 80 100 120 °C 160
150
0
5
10
15
20
25
30
35
40
45
W
55
BTS 117
Ptot
On-state resistance
RON = f(Tj); ID= 3.5A; VIN=5V
-50 -25 0 25 50 75 100 °C 150
Tj
0
25
50
75
100
125
150
175
200
Ω
250
RDS(on)
typ.
max.
Typ. input threshold voltage
VIN(th) = f(Tj); ID=0.7mA; VDS=12V
-50 -25 0 25 50 75 100 °C 150
Tj
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
2.0
VIN(th)
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BTS 117
Typ. transfer characteristics
ID = f(VIN); VDS=12V; Tj=25°C
0123456V8
VIN
0
2
4
6
A
10
ID
Typ. output characteristic
ID = f(VDS); Tj=25°C
Parameter: VIN
01234V6
VDS
0
2
4
6
A
10
ID
Vin=3V
4V
5V
6V
10V
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2
s
tP
-2
10
-1
10
0
10
1
10
K/W
RthJC
0
0.005
0.01
0.02
0.05
0.1
0.2
D=0.5
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BTS 117
Application examples:
Status signal of thermal shutdown by
monitoring input current
D
S
IN
µC Vbb
HITFET
VIN
RSt
VIN
thermal shutdown
∆V
µC
∆V = RST *IIN(3)
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BTS 117
Package Ordering Code
P-TO220-3-1 Q67060-S6500-A2
Package Ordering Code
P-TO220-3-45 Q67060-S6500-A3
1) shear and punch direction no burrs this surface
1)
0.5
2.4
2.54
1.05
9.2
1.3 4.4
9.9
GPT05164
8
10.5
1.5
1.5
3.6
0.2
0.75
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
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