© 2000 IXYS All rights reserved 1 - 3
IdAVM = 32 A
VRRM = 800-1600 V
VRSM VRRM Type
VDSM VDRM
VV
900 800 VHF 28-08io5
1300 1200 VHF 28-12io5
1500 1400 VHF 28-14io5
1700 1600 VHF 28-16io5
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
① for resistive load
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol Test Conditions Maximum Ratings
IdAV TK = 85°C, module 28 A
IdAVM ①module 32 A
IFRMS, ITRMS per leg 23 A
IFSM, ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 V t = 8.3 ms (60 Hz), sine 330 A
TVJ = TVJM t = 10 ms (50 Hz), sine 270 A
VR = 0 V t = 8.3 ms (60 Hz), sine 300 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 440 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 455 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 365 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 370 A2s
(di/dt)cr TVJ = 125°C repetitive, IT = 50 A 150 A/ms
f =50 Hz, tP =200 ms
VD = 2/3 VDRM
IG = 0.3 A, non repetitive, IT = 1/2 • IdAV 500 A/ms
diG/dt = 0.3 A/ms
(dv/dt)cr TVJ = TVJM; VDR = 2/3 V DRM 1000 V/ms
RGK = ¥; method 1 (linear voltage rise)
VRGM 10 V
PGM TVJ = TVJM tp = 30 ms£10 W
IT = ITAVM tp = 500 ms£5W
tp = 10 ms £1W
PGAVM 0.5 W
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL £ 1 mA t = 1 s 3600 V~
MdMounting torque (M5) 2-2.5 Nm
(10-32 UNF) 18-22 lb.in.
Weight 50 g
Features
●Package with DCB ceramic base plate
●Isolation voltage 3600 V~
●Planar passivated chips
●¼" fast-on terminals
●UL registered E 72873
Applications
●Supply for DC power equipment
●DC motor control
Advantages
●Easy to mount with two screws
●Space and weight savings
●Improved temperature and power
cycling
Dimensions in mm (1 mm = 0.0394")
VHF 28
Half Controlled
Single Phase Rectifier Bridge
with Freewheeling Diode
123
6
8
4
2
8
6
4
31
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© 2000 IXYS All rights reserved 2 - 3
Symbol Test Conditions Characteristic Values
IR, IDVR = VRRM; VD = VDRM TVJ = TVJM £5mA
TVJ = 25°C£0.3 mA
VT, VFIT, IF = 45 A; TVJ = 25°C£1.6 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.9 V
rT15 mW
VGT VD = 6 V; TVJ = 25°C£1.0 V
TVJ = -40°C£1.2 V
IGT VD = 6 V; TVJ = 25°C£65 mA
TVJ = -40°C£80 mA
TVJ = 125°C£50 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM £0.2 V
IGD TVJ = TVJM;V
D = 2/3 VDRM £5mA
ILIG = 0.3 A; tG = 30 ms; TVJ = 25°C£150 mA
diG/dt = 0.3 A/ms; TVJ = -40°C£200 mA
TVJ = 125°C£100 mA
IHTVJ = 25°C; VD = 6 V; R GK = ¥£100 mA
tgd TVJ = 25°C; VD = 1/2 VDRM £2ms
IG = 0.3 A; diG/dt = 0.3 A/ms
tqTVJ = 125°C, IT = 15 A, tP = 300 ms, VR = 100 V typ. 150 ms
Qrdi/dt = -10 A/ms, dv/dt = 20 V/ms, VD = 2/3 VDRM 75 mC
RthJC per thyristor (diode); DC current 1.4 K/W
per module 0.35 K/W
RthJK per thyristor (diode); DC current 2.0 K/W
per module 0.5 K/W
dSCreepage distance on surface 12.6 mm
dACreepage distance in air 6.3 mm
aMax. allowable acceleration 50 m/s2
VHF 28
Fig. 1 Gate trigger range
Fig. 2 Gate controlled delay time tgd
1 10 100 1000
0.1
1
10
IG
VG
mA
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
4: PGAV = 0.5 W
5: PGM = 1 W
6: PGM = 10 W
IGD, TVJ = 125°C
4
2
1
5
6
10 100 1000
1
10
100
1000
µs
tgd
TVJ = 25°C
typ. Limit
mA
IG
3
750
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© 2000 IXYS All rights reserved 3 - 3
Fig. 3 Surge overload current per chip
IFSM: Crest value, t: duration Fig. 5 Max. forward current at
heatsink temperature
Fig. 4 I2t versus time (1-10 ms)
per chip
Fig. 6 Power dissipation versus direct output current and ambient temperature
Fig. 7 Transient thermal impedance junction to heatsink per chip
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.3441 0.0344
2 1.1554 0.12
3 1.5005 0.5
VHF 28
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