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1998©
Document No. D15597EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4551
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4551 is a power transistor developed for high-speed
switching and features low VCE(sat) and high hFE. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = 2 V, IC = 2 A)
VCE(sat) ≤ 0.3 V (IC = 6 A, IB = 0.3 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 60 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 10 A
Collector current (pulse) IC(pulse)*20A
Base current (DC) IB(DC) 5.0 A
Total power dissipation PT (Tc = 25°C) 30 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 300
µ
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
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Data Sheet D15597EJ2V0DS
2
2SC4551
ELECTRICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector to emitter voltage VCEO(SUS) IC = 6.0 A, IB = 0.6 A, L = 1 mH 60 V
Collector to emitter voltage VCEX(SUS) IC = 6.0 A, IB1 = −IB2 = 0.6 A,
VBE(OFF) = −1.5 V, L = 180
µ
H, clamped
60 V
Collector cutoff current ICBO VCB = 60 V, IE = 0 10
µ
A
Collector cutoff current ICER VCE = 60 V, RBE = 50 Ω, Ta = 125°C1.0 mA
Collector cutoff current ICEX1 VCE = 60 V, VBE(OFF) = −1.5 V 10
µ
A
Collector cutoff current ICEX2 VCE = 60 V, VBE(OFF) = −1.5 V,
Ta = 125°C
1.0 mA
Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 10
µ
A
DC current gain hFE1*V
CE = 2.0 V, IC = 1.0 A 100
DC current gain hFE2*V
CE = 2.0 V, IC = 2.0 A 100 200 400
DC current gain hFE3*V
CE = 2.0 V, IC = 6.0 A 60
Collector saturation voltage VCE(sat)1*I
C = 6.0 A, IB = 0.3 A 0.3 V
Collector saturation voltage VCE(sat)2*I
C = 8.0 A, IB = 0.4 A 0.5 V
Base saturation voltage VBE(sat)1*I
C = 6.0 A, IB = 0.3 A 1.2 V
Base saturation voltage VBE(sat)2*I
C = 8.0 A, IB = 0.4 A 1.5 V
Collector capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 150 pF
Gain bandwidth product fTVCE = 10 V, IC = 1.0 A 140 MHz
Turn-on time ton 0.3
µ
s
Storage time tstg 1.5
µ
s
Fall time tf
IC = 6.0 A, RL = 8.3 Ω,
IB1 = −IB2 = 0.3 A, VCC ≅ 50 V
Refer to the test circuit.
0.3
µ
s
* Pulse test PW ≤ 350
µ
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking M L K
hFE2 100 to 200 150 to 300 200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
Data Sheet D15597EJ2V0DS 3
2SC4551
TYPICAL CHARACTERISTICS (Ta = 25°
°°
°C)
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Data Sheet D15597EJ2V0DS
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2SC4551
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Data Sheet D15597EJ2V0DS 5
2SC4551
[MEMO]
2SC4551
M8E 00. 4
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