©2004 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
May 2005
RMPA2263
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WCDMA Pow er Am pli fier Mo du le 19 20–19 80 M Hz (P rel imin ary)
RMPA2263
i-Lo™
Rev. G
RMPA2263
i-Lo™
WCDMA Power Amplifier Module
1920–1980 MHz
Features
■40% WC DMA efficiency at +28 dBm Pout
■14% WC DMA efficiency (85 mA total cur rent) at +16 dBm
Pout
■Linear operation in low-power mode up to +19 dBm
■Low quiescent current (Iccq): 25 mA i n low-power mode
■Meets UMTS/WCDMA performance requirements
■Meets HSDPA performance requirements
■S in gle pos i t iv e-sup ply operat i on wit h low po w er an d shut-
down modes
– 3.4V typical Vcc operatio n
– Low Vref (2.85V) compatible with advanced handset
chipsets
■Compact Lead-free compliant LCC package –
(4.0 x 4.0 x 1.5 mm nominal)
■Industry standard pinout
■Internall y matched to 5 0 Ohms and DC blocked RF input/
output
General Description
The RMPA2263 Power Amplifier Module (PAM) is Fairchild’s
latest innovation in 50 Ohm matched, surface mount modules
targeting UMTS/WCDMA/HSDPA applications. Answering the
call for ultra-low DC power consumption and extended battery
life in portable electronics, the RMPA2263 uses novel
proprietary circuitry to dramatically reduce amplifier current at
low to med ium RF outp ut pow er lev els ( < +16 dB m) , wh er e the
handset most often op era tes. A simple two-state Vmo de cont ro l
is all that is needed to reduce operating current by more than
50% at 16 dBm output power, and quiescent current (Iccq) by
as much as 70% compared to traditional power-saving
methods. No additional circuitry, such as DC-to-DC converters,
are required to achieve this remarkable improvement in
amplifier efficiency. Further, the 4 x 4 x 1.5 mm L CC packag e is
pin- c om pat ib le and a dr op -in re pl ac em e nt for las t gene r at io n 4 x
4 mm PAMs widely used today, minimizing the design time to
apply this performance-enhancing technology. The multi-stage
GaAs Microwave Monolithic Integrated Circuit (MMIC) is
manufactured using Fairchild RF’s InGaP Heterojunction
Bipol ar Transist or (HBT) proc ess.
Device
Fu ncti onal Block Diagram
Vref
Vmode
RF IN
GND
Vcc1
RF OUT
GND
GND
GND
7
6
8
9
10
4
3
2
BIAS/MODE SWITCH
1
5
Vcc2
11 (paddle ground on package bottom)
INPUT
MATCH
OUTPUT
MATCH
MMIC
(Top View)
PRELIMINARY
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RMPA2263
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RMPA2263
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WCDMA Powe r Am plif ier Mo dule 192 0–198 0 MHz ( Pr elimin ary )
Ab solute Ra tin gs1
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics1
Notes:
1. All par ameters met at Tc = +25° C, Vcc = +3.4V, Vref = 2.85 V an d load VSWR ≤ 1.2:1, un less ot her wis e noted.
2. All phase angles.
3. Guaranteed by design.
Symbol Parameter Ratings Units
Vcc1, Vcc2 Supply Voltages 5.0 V
Vref Reference Voltage 2.6 to 3.5 V
Vmode Power Control Voltage 3.5 V
Pin RF Input Power +10 dBm
Tst g Storage Temperature -55 to +150 °C
Symbol Parameter Min Typ Max Units Comments
f Operating Frequency 1920 1980 MHz
WCDMA Operation
Gp Power Gain 27.5 dB Po=+28dBm, Vmode=0V
23 dB Po =+ 16 dB m , Vm od e≥2.0V
Po Linear Output Power 28 dBm Vmode=0V
16 dBm Vmode≥2.0V
PAEd PA Ed ( di gi tal) @ 28 dBm 40 % Vm od e= 0V
PAE d (di g i tal) @ 16 dBm 13 % Vm od e ≥2.0V
Itot High Power Total Current 460 mA Po=+28dBm, Vmode=0V
Low Power Total Current 85 mA P o=+16dBm, Vmode≥2.0V
Adjacent Channel Leakage
Ratio WCDM A Mo d ulation 3GPP
3.2 03-00 DPCCH+1 DCDCH
ACLR1 ±5.00MHz Offset -40 dBc Po=+28dBm, Vmode=0V
-46 dBc Po=+ 16dBm, Vm ode≥2.0V
ACLR2 ±10.0MHz Offset -52 dBc Po=+28dBm, Vmode=0V
-57 dBc Po=+ 16dBm, Vm ode≥2.0V
General Characteristics
VSWR Input Impedanc e 2.0: 1 2.5:1
NF Noise Figure 4 dB
Rx No Receive Band Noise Power -139 dBm/Hz Po≤+28dBm, 2110 to 21 70 MHz
2fo Harmonic Suppression -38 dBc Po≤+28dBm
3fo–5fo Harmonic Suppression -55 dBc Po≤+28dBm
S Spurious Outputs2, 3 -60 dBc Load VSWR≤5.0:1
Ruggedness with Load
Mismatch310 :1 No pe r m an en t dam a ge
Tc Case Operating Temperature -30 85 °C
DC Characteristics
Iccq Qu iescent Current 25 mA Vmode≥2.0V
I ref Refe re nc e C urr e nt 7 mA Po ≤+28dBm
Ic c( off ) Shutdow n Le ak ag e C ur re nt 1 5 µA No ap pl ied RF sig na l
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RMPA2263
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Rev. G
RMPA2263
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WCDMA Powe r Am plif ier Mo dule 192 0–198 0 MHz ( Pr elimin ary )
Recommended Operating Conditions
DC Turn On Sequence:
1. Vcc1 = Vcc2 = 3.4V (typica l)
2. Vref = 2.85V (ty pical)
3. High-Power: Vmode = 0V (Pout > 16dBm)
Low-Power: Vm ode = 2 .0V (P out < 16dBm)
Symbol Parameter Min Typ Max Units
f Operating Frequenc y 1920 1980 MHz
Vcc1, Vcc2 Supply Voltage 3.0 3.4 4.2 V
Vref Re ference Vol tage
Operating
Shutdown 2.7
02.85 3.1
0.5 V
V
Vmode Bias Control Voltage
Low-Power
High-Power 1.8
02.0 3.0
0.5 V
V
Po ut Linear O utp u t Po wer
High-Power
Low-Power +16 +28
+19 dBm
dBm
Tc Case Operating Temperature -30 +85 °C
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RMPA2263
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Rev. G
RMPA2263
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WCDMA Powe r Am plif ier Mo dule 192 0–198 0 MHz ( Pr elimin ary )
Evaluation Board Layout
Materials List
Evaluation Board Schematic
Qty Item No. Part Number Description Vendor
1 1 G657553-1 V2 PC Board Fairchild
2 2 #142-0701-8 41 SMA Connector Jo hnson
5 3 #2340-5211TN Terminals 3M
Ref 4 Assembly, RMPA2263 Fairchild
3 5 GRM39X7R102K50V 1000pF Capacitor (0603) Murata
3 5 (Alt) ECJ-1VB1H102K 1000pF Capacitor (0603) Panasonic
2 6 C3216X5R1A335M 3.3µF Capacitor (1206) TDK
1 7 GRM39Y5V104Z16V 0.1µF Capacitor (0603) Murata
1 7 (Alt) ECJ-1VB1C104K 0.1 µF Capacitor (0603) P anasonic
A/R 8 SN63 Sold er Paste Ind ium Corp.
A/R 9 SN96 Sold er Paste Ind ium Corp.
XYTT
Z
2263
3
6
5
1
2
4
57
65
210
8
3, 6, 7, 9
VCC2
(PACKAGE BASE)
50 Ohm TRL 50 SMA2
RF OUT
SMA1
RF IN Ohm TRL
3.3 µF
VREF
3.3 µF1000 pF1000 pF
1000 pF 0.1 µF
4
VMODE
11
5
VCC1 1
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RMPA2263
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RMPA2263
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WCDMA Powe r Am plif ier Mo dule 192 0–198 0 MHz ( Pr elimin ary )
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Pack age Outline
Signal Descriptions
Pin # Signal Name Description
1 Vcc1 Supply Voltage to Inp ut St age
2 R F In RF Input Sign al
3 GND Ground
4 Vmode High Power/Low Power Mode Control
5 Vref Reference Voltage
6 GND Ground
7 GND Ground
8 R F Out RF Outp ut Signa l
9 GND Ground
10 Vcc2 Supply Voltage to Outp ut Stage
11 GND Paddle Gro und
1
I/O 1 INDICATOR TOP VIEW
FRONT VIEW
BOTTOM VIEW
DETAIL A. TYP.
(4.00mm
1.60mm MAX.
.30mm TYP.
.18mm
3.65mm
.85mm TYP.
.25mm TYP.
1.08mm1.84mm
3.50mm TYP. See Detail A
) SQUARE
+.100
–.050
2
3
4
5
10
9
8
7
6
11
1
2
.40mm .10mm
.10mm
.40mm
.45mm
XYTT
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XYTT
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RMPA2263
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Rev. G
RMPA2263
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WCDMA Powe r Am plif ier Mo dule 192 0–198 0 MHz ( Pr elimin ary )
6www.fairchildsemi.com
Appl ic at io ns Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Pr ecautions to Avoid Perman ent Device Damag e:
• Cleanliness: Observe proper handling procedures to ensure
clean devices and PCBs. Devices should remain in their
original packaging until component placement to ensure no
contamination or damage to RF, DC and ground contact
areas.
• Device Cleaning: Standa rd b oard cleaning techniq ues shou ld
not present device problems provided that the boards are
properly dried to remove solvents or water residues.
• Static Sensitivi ty: Fo llow ESD precautions to prot ect agains t
ESD dama ge:
– A pro per ly gr ound ed sta ti c-dis sipa ti ve su rfa ce on whi ch to
pl ac e de vi ce s.
– Static-dissipative floor or mat.
– A pro pe r ly grou nd ed cond uct i ve wr ist st rap f or ea ch pe rson
to w ear while handling devices.
• General Handling: Handle the package on the top with a
vacuum collet or along the edges with a sharp pair of bent
tweezers. Avoiding damaging the RF, DC, and ground
contacts on the package bottom. Do not apply excessive
pressure to the top of the lid.
• Device Storage: Devices are supplied in heat-sealed,
moisture-barrier ba gs. In this conditio n, d evices are protected
and require no special storage conditions. Once the sealed
bag has been opened, devices should be stored in a dry
nitrogen environment.
Device Usage :
Fairchild recommends the following procedures prior to
assembly.
• Assemble the devices within 7 days of removal from the dry
pack.
• During the 7-day period, the devices must be stored in an
environment of less than 60% relative humidity and a
maximum temperature of 30°C
• If th e 7-da y pe rio d or the envi ron me nt al c ondi ti o ns have be en
ex ceeded, then the dry-b ake pr oced ure, at 12 5°C fo r 24 h ours
minimum, must be perfor med.
Solder Mate rials & Temper at ure Profile:
Reflow soldering is the preferred method of SMT attachment.
Hand soldering is not recommended.
Reflow Profile
• Ramp- up: During this stage the solvents are evaporated from
the solder paste. Care should be taken to prevent rapid
oxidation (or paste slump) and solder bursts caused by violent
solvent out-gassing. A maximum heating rate is 3°C/sec.
• Pre-heat/soak: The soak temperature stage serves two
purposes; the flux is activated and the board and devices
achieve a uniform temperature. The recommended soak
c ondition is: 60- 180 seconds at 150- 200°C.
• Refl ow Zo ne: If the tem pe rat ur e is too hi gh , the n de vic es may
be da mage d by mech ani cal str ess du e to the rmal mismat ch or
there may be problems due to excessive solder oxidation.
Excessive time at temperature can enhance the formation of
inter-metallic compounds at the lead/board interface and may
lead to early mechanical failure of the joint. Reflow must occur
prior to the flux being completely driven off. The duration of
peak reflow temperature should not exceed 20 seconds.
Soldering temperatures should be in the range 255–260°C,
with a maximum limit of 26 0°C.
• Cooling Zone: Steep thermal gradients may give rise to
exc es si ve ther m a l sh oc k . H owe v er, ra p id c oo l i ng prom ot e s a
finer grain structure and a more crack-resistant solder joint.
The illustration below indicates the recommended soldering
profile.
Solder Joint Characteristics:
Proper operation of this device depends on a reliable void-free
at ta c hm en t of the he at s in k to the P W B. Th e s ol der jo in t shou ld
be 95 % vo id - free and b e a co ns is te nt t hi ck n es s.
Rework Considerations:
Rework of a device attached to a board is limited to reflow of t he
solder with a heat gun. The device should be subjected to no
more than 15°C above the solder melting temperature for no
more than 5 seconds. No more than 2 rework operations should
be performed.
Recomm en ded So lder Reflow Profile
150
Ramp-Up Rate
3 °C/sec max
25
Temperature (°C)
Time 25 °C/sec to peak temp
6 minutes max
Ramp-Down Rate
6 °C/sec max
Preheat, 150 to 200 °C
60 - 180 sec
200
217
Time above
liquidus temp
60 - 150 sec
100
260
Peak temp
260 +0/-5 °C
10 - 20 sec
Time (Sec)
Ramp-Up Rate
3 °C/sec max
50
7www.fairchildsemi.com
RMPA2263
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Rev. G
RMPA2263
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WCDMA Pow er Am pli fier Mo du le 19 20–19 80 M Hz (P rel imin ary)
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF F AIRCHILD SEMICONDUCTOR CORPORATION
.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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