BSC019N04NS G
OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel; Normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDVGS=10 V, TC=25 °C 100 A
VGS=10 V, TC=100 °C 100
VGS=10 V, TA=25 °C,
RthJA=50 K/W2) 29
Pulsed drain current3) ID,pulse TC=25 °C 400
Avalanche current, single pulse4) IAS TC=25 °C 50
Avalanche energy, single pulse EAS ID=50 A, RGS=25 Ω295 mJ
Gate source voltage VGS ±20 V
Value
1) J-STD20 and JESD22
VDS 40 V
RDS(on),max 1.9 mΩ
ID100 A
Product Summary
PG-TDSON-8
Type Package Marking
BSC019N04NS G PG-TDSON-8 019N04NS
Rev. 1.4 page 1 2009-10-22
BSC019N04NS G
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation Ptot TC=25 °C 125 W
TA=25 °C,
RthJA=50 K/W2) 2.5
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC bottom - - 1 K/W
top - - 18
Device on PCB RthJA 6 cm2 cooling area2) --50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 40 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=85 µA 2-4
Zero gate voltage drain current IDSS
VDS=40 V, VGS=0 V,
Tj=25 °C - 0.1 1 µA
VDS=40 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=50 A - 1.6 1.9 mΩ
Gate resistance RG- 1.3 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=50 A 60 120 - S
4) See figure 13 for more detailed information
3) See figure 3 for more detailed information
Value
Values
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.4 page 2 2009-10-22
BSC019N04NS G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 6600 8800 pF
Output capacitance Coss - 1800 2400
Reverse transfer capacitance Crss -70-
Turn-on delay time td(on) -22-ns
Rise time tr- 5.6 -
Turn-off delay time td(off) -33-
Fall time tf- 6.6 -
Gate Char
g
e Characteristics5)
Gate to source charge Qgs -32-nC
Gate charge at threshold Qg(th) -20-
Gate to drain charge Qgd -10-
Switching charge Qsw -22-
Gate charge total Qg- 81 108
Gate plateau voltage Vplateau - 4.9 - V
Gate charge total, sync. FET Qg(sync)
VDS=0.1 V,
VGS=0 to 10 V -77-nC
Output charge Qoss VDD=20 V, VGS=0 V -66-
Reverse Diode
Diode continuous forward current IS- - 100 A
Diode pulse current IS,pulse - - 400
Diode forward voltage VSD
VGS=0 V, IF=50 A,
Tj=25 °C - 0.85 1.2 V
Reverse recovery charge Qrr
VR=20 V, IF=IS,
diF/dt=400 A/µs - 100 - nC
5) See figure 16 for gate charge parameter definition
TC=25 °C
Values
VGS=0 V, VDS=20 V,
f=1 MHz
VDD=20 V, VGS=10 V,
ID=30 A, RG=1.6 Ω
VDD=20 V, ID=30 A,
VGS=0 to 10 V
Rev. 1.4 page 3 2009-10-22
BSC019N04NS G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
0.01
0.1
1
10
0000001
tp [s]
ZthJC [K/W]
0
20
40
60
80
100
120
140
0 40 80 120 160
TC [°C]
Ptot [W]
0
20
40
60
80
100
120
0 40 80 120 160
TC [°C]
ID [A]
Rev. 1.4 page 4 2009-10-22
BSC019N04NS G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
1
2
3
4
5
6
0 1020304050
ID [A]
RDS(on) [mΩ]
25 °C
150 °C
0
100
200
300
400
2345678
VGS [V]
ID [A]
0
50
100
150
200
250
0 40 80 120 160
ID [A]
gfs [S]
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
100
200
300
400
0123
VDS [V]
ID [A]
Rev. 1.4 page 5 2009-10-22
BSC019N04NS G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=50 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; ID=85 µA
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
0.5
1
1.5
2
2.5
3
3.5
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
1
1.5
2
2.5
3
3.5
4
4.5
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
104
103
102
10110
100
1000
10000
0 10203040
VDS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
VSD [V]
IF [A]
Rev. 1.4 page 6 2009-10-22
BSC019N04NS G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=30 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20
25
30
35
40
45
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
1
10
100
1 10 100 1000
tAV [µs]
IAV [A]
8 V
20 V
32 V
0
2
4
6
8
10
12
0 20406080100
Qgate [nC]
VGS [V]
Rev. 1.4 page 7 2009-10-22
BSC019N04NS G
Package Outline PG-TDSON-8
PG-TDSON-8: Outline
Footprint
Dimensions in mm
Rev. 1.4 page 8 2009-10-22
BSC019N04NS G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 1.4 page 9 2009-10-22
BSC019N04NS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies
(www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
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Rev. 1.4 page 10 2009-10-22
