Diodes, Low Power (Signal) Peak Maximum Reverse Meximum Forward Max. Type Construction Inverse Current Voltage Drop Rect. Max. Case Lead Manufacturer Voltage Current Cap. Outline Info. (Vv) (uA) at Volts Wy) at mA (mA) - (pF) DA1704 Si 25 0.1 26 1 30 - 3 pOo-35 104 GE DE 104 Si 40 20pA 20 0.89 10 - 4 D0=35 104 GE DE 110 Si 40 0.002 30 0.88 10 - 4 0o-35 104 GE DE111 Si 40 200pA 20 0.88 10 - 4 pg-35 104 Ge DE 412 Si 40 100pA 20 1 50 - 6 DO-35 104 GE DE 113 Si 40 250pA 20 41 50 - 6 00-35 104 GE DE 114 Si 40 0.001 30 0.88 10 - 4 b0-35 104 GE DE 115 Si 40 9.002 50 0.88 10 - 4 bO-35 104 GE ozaaG Si 2 2 2 0.8 10 - - DOd-35 104 GE 02805 Si 15 2 12 0.8 10 - - 00-35 104 GE 02806 Si 25 2 22 0.8 10 - - 00-35 104 GE Fb700 Si Planar 20 0.05 20 1.1 50 150 1 oa-7 104 F FD777 Si " 8 0.1 8 1.35 50 150 1.3 po-7 104 F FDH300 Si 125 0.001 125 1 200 500 6 00-35 104 F FDH333 Si " 125 0.003 125 0.9 300 500 6 DO-35 104 F FoH400 Si " 175 a.1 150 41.1 300 500 2 DO-35 104 F FDHS44 Si " 125 0.05 100 1.2 300 500 2.5 DO-35 104 F FDH600 Si Planar Epitaxial 50 Q.1 50 4 200 500 2.5 DO-35 104 F FDH666 Si " " 25 O.1 25 4 100 500 3.5 00-35 104 F FDHSO0 Si Planar 40 0.5 40 1 100 500 3 Dp0-35 104 F FOH999 Si " 25 4 25 1 10 500 5 DO-35 104 F FDH 1000 si " 50 5 50 1 500 500 5 DO-35 104 F FH1100 Si - 4 4 0.55 40 - 4 DO-7 104 F FIT 1100 Si Planar 25 1pA 5 1.05 50 150 1.5 DOo-7 104 F F3T1101 Si " 15 Spa 5 41.1 50 4150 1.8 00-7 104 F ITT33 Si Planar Epitaxial 35 a.1 20 4 10 150 - 00-35 104 ITT ITT&s Si " " 50 0.1 20 1 10 150 - 00-35 104 ITT ITTe00 Si " " 75 0.1 50 1 200 200 - bo-35 104 ITT ITT601 Si " " 50 6.1 36 4 400 200 - DO-35 104 ITT ITT920 Si " " 50 0.2 50 1.2 200 200 - 0035 104 ITT ITT921 Si " " 4100 0.2 100 1.2 200 200 - 00-35 104 ITT ITT922 Si " " 150 0.2 150 1.2 200 200 - DO-35 104 ITT ITT923 si " iw 200 0.2 200 1.2 200 200 - DO-35 104 ITT ITT2001 Si " " 100 0.1 100 4 100 150 - 00-35 104 ITT ITT2002 Si " " 200 g.1 4aa 4 100 150 - 00-35 104 ITT ITT2003 Si " " 250 0.1 100 1 100 150 - 00-35 104 ITT 1TT3001 Si " 70 0.025 60 4 100 100 - DO-35 104 iT ITT3002 Si " " 150 0.001 125 41 100 100 - bo-35 104 ITT ITT3003 Si " " 200 0.025 175 1 4100 100 - 00-35 104 ITT MA1701 Si 100 0.03 30 4 50 - 4 DO-34 10% GE ma1702 Si 75 0.03 30 1 50 - 1 bo-34 104 GE mMA1703 si 40 0.05 30 4 50 - 2 DO-34 104 GE maA1704 si 25 0.1 20 1 30 - 3 DO-34 104 GE QA47 Ge Gold Sonded 30 10 30 0.54 30 150 - 00-7 104 M oago Ge Point Contact 30 300 30 2 30 45 - 00-7 104 M OAS4 Ge * 115 75 100 2.1 30 150 - DO-7 404 M gags Ge " " 115 80 100 1.85 30 150 - 00-7 104 M oaz00 Si Junction 50 o.1 50 1,15 30 160 25 00-35 104 M DA2D2 Si 15D 0.1 150 15 30 160 25 bO-35 104 M WG713 si 35 0.1 30 700 100 - bO-35 104 ITT WG1010A Si 15 4 10 4 50 5 - DO-35 104 ITT AN346A Ge Gold Bonded 60 30 10 1 5 - - DO-7 104 ITT 1N55A Ge " " 150 500 150 1 4 - - dO-7 104 ITT 4N558 Ge " " 190 500 150 4 5 - - bo-7 104 ITT 1N60 Ge " " 50 40 20 4 5 - - 00-7 104 ITT 1N81 Ge " " 22.5 30 1.5 0.25 0.1 - - 00-7 104 ITT AN9SBA Ge " " 250 100 50 4 40 - - 00-7 104 ITT 1N100A Ge " " 80 50 50 1 40 - - DD-7 104 ITT 1N270 Ge " " 80 100 50 1 200 - - DOo-7 104 ITT 1N276 Ge " " 60 100 50 1 40 - - DO-7 104 ITT 1N277 Ge " " 120 75 10 4 100 - - 00-7 104 ITT 1N278 Ge " " 60 12 50 1 20 - - 00-7 104 ITT 4AN283 Ge " " 25 20 40 4 200 - - 00-7 404 IvT 4N456 Si Planar 25 0.025 25 4 40 500 - 00-7 104 F ANG56A Si " 25 0.025 25 4 100 500 6 00-35 104 F,ITT 1N657 Si " 60 0.025 60 1 20 500 6 DO-35 104 F,ITT 1N&57A Si " 60 0.025 60 4 100 500 6 00-35 104 F ANL5B Si 125 0.025 125 4 7 500 6 DO-35 404 F AN45BA Si " 125 0.025 125 1 100 500 6 00-35 104 F,ITT 4N459 Si " 175 0.025 175 4 3 500 6 00-35 104 F 100