I X Y CORP LSE D Mi 468beeb OOOOSLS T mm MesaM OS FETs The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user Unlike the popular size 3, 4 and 5 MOSFETs, IXYS size 6 and 7 MegaMOS MOSFETs are 50% larger in silicon area. These FETS provide two times the ruggedness to un- clamped Inductive energy and dv/dt while eliminating the complexities and safeguards needed when parallel- ing smaller MOSFETs. Lower Rosco and Rue In The Same Package Although IXYS MegaMOS FETs are 50% largen they fit in both the TO-204 (TO-3) and TO-247 industry standard packages. Compared with other MOSFETs, they have half the on- resistance across the voltage spec- trum from 80 to 1000 volts. Our size 7 die which has a thermal resistance rating of 0.42C/watt, is capable of handling twice the power of industry standard size 5 MOSFETs. These combined advantages allow for higher current handling and lower power dissipation without requiring a mech- anical redesign. They are ideal for off-line forward and flyback converters, vertical and horizontal deflection circuits, radar modular circuits, mili- tary power supplies as well as other applications requiring very high voltage. Industry Standard Die Size 3 Size 4 size 5 t Size 6 Low C,,, and High Transconductance HDMOS unique cell design and process improvements contribute to the MegaMOS family having 50% higher transconductance levels per unit area than.competitive designs. They also have input capacitance and reverse transfer capacitance values which are much less than when paral- leling two smaller MOSFETS to achieve the same power rating. The designer can simply plug-in the MegaMOS FET to get higher power without a major gate circuit redesign. 18 New Isolated Hi-Rel and Commercial Packages IXYS supplies its MegaMOS family in a number of standard packages with internal isolation for ease of mount- down and higher current handling. MegaMOS FETs are available in the Hi-Rel TO-254 and TO-61 as well as the innovative IXYS Z-Pac For com- mercial applications, the MegaMOS family is available in the rugged TO-238 isolated package, giving IXYS the highest current and power rating available in a single discrete cost- effective package.IX Y CORP 16E D MM 4b4beeb OO00570 & m7 59-5 MegaMOS Power MOSFETs eed MK. A Se ee Ee eee eae Se Se cae ee oar) a es Drain-Source Drain Current On input Power Notes Case Style Part Voltage Ip @ 25 C Case Resistance Cap. Diss. Number Vanypss loconty Ip{Puteed) Rosion) Cies Pp Max (Volts) (Amps) (Amps) (Ohms) (pF) (Watts) IXTH12N100 1000 12 48 1.0 4500 300 TO-247 IXTH11N100 1000 11 44 1.15 4500 300 IXTH1ON100 1000 10 40 1.2 4200 250 IXTHON100 1000 9 36 1.4 4200 250 IXTH12N95 950 12. 48 1.0 4500 300 IXTH11N95 950 W 44 1.15 4500 300 IXTH10N95 950 10 40 1.2 4200 250 IXTHONQ5 950 9 36 1.4 4200 250 IXTH13N90 900 13 2 0.8 4500 300 IXTH12N90 900 12 48 0.9 4500 300 IXTH11N90 900 11 44 0.95 4200 250 IXTH10N90 900 10 40 1.1 4200 250 IXTH13N80 800 13 2 0.8 4500 300 IXTH12N80 800 12 48 0.9 4500 300 IXTH11N80 800 11 44 0.95 4200 250 IXTH10N80 800 10 40 1.1 4200 250 IXTH18N65 650 18 72 0.4 4500 300 IXTH17N65 650 17 68 0,45 4500 300 IXTH15N65 650 15 60 0.5 4200 250 IXTHISN65 650 13 52 0.65 4200 250 IXTH21N60 600 21 84 0.3 4500 300 IXTH20N60 600 20 80 0.35 4500 300 IXTH17N60 600 17 68 0.4 4200 250 IXTH15N60 600 15 60 0.5 4200 250 IXTH21N55 550 21 84 0.3 4500 300 IXTH20NS5 550 20 80 0.35 4500 300 IXTH17NS5 550 7 68 0.4 4200 250 IXTHISN55 550 18 60 0.5 4200 250 IXTH26NS0 500 26 104 0.2 4500 300 IXTH24N50 500 24 96 0.23 4500 300 IXTH21N50 500 21 84 0.25 4200 250 IXTH19N50 500 19 76 0.3 4200 250 IXTH26N45 450 26 104 0.2 4500 300 IXTH24N45 450 24 96 0.23 4500 300 IXTH21N45 450 21 84 0.25 4200 250 IXTH19N45 450 19 76 0.3 4200 250 IXTH40N30 300 40 160 0.08 .} 4200 250 IXTH35N30 300 35 140 0.1 4200 250 IXTH40N25 250 40 160 0.08 4200 250 IXTHS5N25 250 35 140 0.1 4200 250 IXTHSON20 200 50 200 0.045 4200 250 IXTH42N20 200 42 200 0.065 4200 250 IXTHSON15 150 50 200 0.045 4200 250 IXTH42N15 150 42 200 0.065 4200 250 IXTH75N10 100 75 300 0.02 4200 250 IXTH67N10 100 67 268 0.025 4200 250 IXTH75NO08 80 75 300 0.02 4200 250 IXTH67NO8 80 67 268 0.025 4200 250 19IX S$ CORP L6E D MM 4686226 0000571 5 mm 7-39-45 MegaMOS Power MOSFETs Drain-Source) Drain Current On | Input. | Power | Notes CaseStyle Part Voltage tp @ 25 C Cage Resistance Cap. Diss. Number Viarypss tnxconty ID(Putsed) Rosjon) Cies Pp Max (Volts) (Amps) (Amps) (Ohms) (pF) (Watts) IXTL1SN65 650 13 2 0.5 4200 175 10-254 IXTL14N60 600 14 56 0.4 4200 175 IXTL18N50 500 18 72 0.25 4200 175 IXTL24N40 400 24 96 0.2 4200 175 IXTL25N20 200 25 100 0.065 4200 175 IXTL25N10 100 25 100 0.030 4200 175 IXTM12N100 1000 12 48 1.0 4500 300 IXTMIIN100 | 1000 1 44 115 | 4500 | 300 70-204 (TO-8) IXTM10N100 1000 10 40 1.2 4200 250 IXTM9N100 1000 9 36 1.4 4200 250 IXTM12N95 950 12 48 1.0 4500 300 IXTM11N95 950 1 44 115 4500 300 IXTM1ON95 950 10 40 1.2 4200 250 IXTMON95 950 9 36 1.4 4200 250 IXTM18N90 900 13 52 0.8 4500 300 IXTM12N90 900 12 48 0.9 4500 300 IXTM11N90 900 W 44 0.95 4200 250 IXTMION90 900 10 40 1.41 4200 250 IXTM13N80 800 13 52 0.8 4500 300 IXTM12N80 800 12 48 0.9 4500 300 IXTM11N80 800 11 44 0,95 4200 250 IXTM10N80 800 10 40 1.1 4200 250 IXTM18N65 650 18 72 0.4 4500 300 IXTM17N65 650 17 68 0.45 4500 300 IXTM15N65 650 15 60 0.5 4200 250 IXTM13N65 650 13 52 0.65 4200 250 IXTM21N60 600 21 84 0.3 4500 300 IXTM20N60 600 20 80 0.35 4500 300 IXTM17N60 600 17 68 0.4 4200 250 IXTM1SN60 600 15 60 0.5 4200 250 IXTM21N55 550 21 84 0.3 4500 300 IXTM20N55 550 20 80 0.35 4500 300 IXTM17N55 550 17 68 0.4 4200 250 IXTM15N55 550 15 60 0.5 4200 250 IXTM26N50 500 26 104 0.2 4500 300 IXTM24N50 500 24 96 0.23 4500 300 IXTM21N50 500 21 84 0.25 4200 250 IXTM19N50 500 19 76 0.3 4200 250 IXTM26N45 450 26 104 0,2 4500 300 IXTM24N45 450 24 96 0.23 4500 300 IXTM21N45 450 21 84 0.25 4200 250 IXTM19N45 450 19 76 0.3 4200 250 20 i 1KIX S$ CORP L8E D MM 4b4b22b 0000572 T 7-39 SNS MegaMOS Power MOSFETs omer Cra 5 a ee er eer ee ae Drain-Source in Current Dra ~ On Input | Power | Notes Case Style Part Voltage ip @ 25 C Case Resistance Cap. Diss. Number Viaryoss toicont) lp(Putsed) Rosjon) Ciss Pp Max (Voit) (Amps) (Amps) (Ohms) (pF) (Watts) IXTM40N30 300 40 160 0.08 4200 250 TO-204 (TO-3) IXTM35N30 300 35 140 0.1 4200 250 IXTM40N25 250 40 160 0.08 4200 250 IXTM35N25 250 35 140 0.1 4200 250 IXTMS50N20 200 50 200 0.045 4200 250 IXTM42N20 200 42 200 0.065 4200 250 IXTMS50N15 150 50 200 0.045 4200 250 IXTM42N15 150 42 200 0.065 4200 250 IXTM75N10 100 75 300 0.02 4200 250 IXTM67N10 100 67 268 0.025 4200 250 IXTM75N08 80 75 300 0.02 4200 250 IXTM67NO8 80 67 268 0.025 4200 250 IXTS12N65 650 12 48 0.5 4200 175 IXTS13N60 600 13 52 0.4 4200 175 IXTS17N50 500 17 68 0.25 4200 175 IXTZ11N100 1000 11 44 1.15 4500 300 IXTZ12N90 900 12 48 0.9 4500 300 IXTZ18N65 650 18 72 0.4 4500 300 IXTZ21N60 600 21 84 0.3 4500 300 IXTZ24N50 00 24 96 0.23 4500 300 IXTZ35N30 300 35 140 0.1 4200 250 IXTZ42N20 200 42 168 0.065 4200 250 IXTZ67N10 100 67 268 0.025 4200 250 21IX S CORP L8E D MM 4b4beeb 0000587 1 mm [DETAILED PACKAGE OUTLINES TO-220 AB CONFORMS TO OUTLINE TO-220 (IR H-7) Dimensions in Millimeters (Inches) 457 (0,180) TZ ON) I 1.32 {0,052 L 10.54 (0.415) _,} 981 (0, tatoo ao 10.2 (0 400) Nd BRAIN ir OT 42.70 10,500 HRN ' | (0s . g.elogen I 1 GATE 2CURRENTSENSE [1 2 9 4 5 TT 3 OARAIN : 4 KELVIN SOURCE 5~ SOURCE 14.81 (0.575) ti (0.020) | | | 0.98 {.015) 0.81 (0 32 297 (0.117)_,] atta) | | 196 (0.07) pt rd =p TO-247 (3 LEADED) TO-247 (5 LEADED) ie po r 12345 in ML Dim. aittimeter Me ox. _| Fe alllex A_ 47 63 185 209 Jt ihe re 4 =| fF C45 ~~ 60178236 Ie + +--+ L Dim. Minimeter inches a L O 107 214 776 843 Min, Max. Min. Max. Pel. GATE F653 ~61 209.240 A 47 53.185 _~.209 @. SOURCE G_153 169 602.625 PIN 1. GATE C45 ~=60 178 ~.236 H_ 37 43 146.169 2 MIRROR D197 214.776 ~843 J 195 24.077 __.094 A KELVIN F563 61 209.240 207 34117 _.134 " G 153169 602_625 K 10 44040058 Kit 13043 05T LL 54 55213217 L251 256 099.101 M199 20.2 783.795 M199 202 783.795 N22) 26 087 _~102 N22 26 087 102 Q 0408016 .031 Q 04 08 016 031 A 293314 29 R29 33.114 129 36IX Y S$ CORP LOE D MM 4bSbeeb 0000584 TO-238 Dimensions in Millimeters 31,5 118 12,2 au? 89 9,1 7.8 8.2 @ 4,1 f~ @as 7) = 4min >} TY TY D | O75 ola |< PR ts E - oes alvale 2 -- cy by [4 min ii KL) WY ' S V Lis | 8 73 Hee \ screw M4 H100 149 isi 5,5 min [x] 30,) Bu } C Z [| 36,2 Y-4 . Y-3 Dimensions in Millimeters Dimensions in Millimeters 67: M5 rs irs 2 ' i 4 4 9 1 1 | i WN + | eat ri {ty t try Vio t I it ae ca, 0,2 26,5 ee L- 37IX Y S$ CORP L6E D MM 4646226 Oo00s5a9 5S a 7-W/2IO TO-220 HERMETIC TO-204 AE 4 e_. 420 __,, . ' A je 219 B a O31 1 203 a { | 145, ce | tL as at ia] eb H K ~] fe- 0 | TE e- F _----e 420 | iog? Qa Dim, _ Millimeter inches Wie Min, Max. Min. Max. ; 3S L A 3037 = ~+1.85 B 1971 776 600 u C762 10.16 300.400 inn PIN. GATE D147 +157 058.062 2. SOUACE E 1.62 3.43 060 135 GASE~ DRAIN F 30.15 BSC 1.187 BSC G 1067 11.18 420.440 on j__* H 593 610 210.240 O25 ollfe-Ls2g0 1 J 1668 17.12 657 674 a8 K 11.20 11.98 441 472 e928 i Q 386 411 152 162 R__2484 2527 978 995 TO-204 AA TO-254 HERMETIC a ______ } tL G a | 150 . 52 ALLOY/ o COPPER COneD (3),090 | GLASS (3) FE DIA. HOLE ry wr RS. a | Dim. Millimeter Inches te wie : Mio, Max. Min. Max. 535 | 2 A 3097. 155 mst of sf 065 MAD. u 8 71 @6 copren | j 1186 DIA. C635 889 250 .350 | | PIN. GATE D097 +109. 038.048 Ons 2,SQURCE E - 949 136 OAS AIMS mol Lon 270 Lo F 40.15 @SC 1.187 BSC 1250 . G 1067 11.18 420 .440 hs H 5.33 610.210 240 535 J 1668 17.12 657 674 K 1120 11.98 441.472 Q 386 411 .152 .1e2 R_ 2484 2547 978 1.00 38I X Y S CORP L8E D MM 4bab22b 0000590 1 mm 7-9/7) CONFORMS TO JEDEC OUTLINE TO-210AC (TO-61) QUADPAC Dimensions in Millimeters (Inches) 5 x 0.125=0.625 ie (NoH-AccuM) 7 + tr #040 0.250 VAN, i TERMINALS 1. SOURCE ans SEATING _-*1 2. GATE PLANE . 4. ISOLATED STUD XH 4 7 RO170 HSS loghes Malunaters loches Millimetecs Symbat} Min. Max { Min, Max. | Notes Symbotf Min. Max. | Min. Max. | Notes A [oa [oso } aze [ied 1 Reed [0875 | 1626 | 2223 1 Ay 0210 6.86} 2 em |o220 [oe | 559 | 6.32 | | | | | | eo fosia [agar | i549 fares | 2 NH | 0.422 | 0.455 | to.72 | 1156 0) {0.570 | aero | 184 | 1549 Ny 0090 229 TOLERANCES: ato & Jose? foss7 | issa | i745 gt fo0ss foorz | 1ig | 193 111.000 XIKE.O1 e Joo faa | aca ]iose] aty foods |oo7? | viz} ase] 4 pe 1,529 _____> X20. 03 0.25 ey fora [ozs] aa2] sar] 5 ew [02228] 02268] sset] S761] 3 F foosa joie} 229] dar} t NOTES 1, QIMENSION QOES NOT INCLUGE SEALING FLANGES. 2. PACKAGE CONTQUR OPTIONAL WITHIN GIMENSIONS SPECIFIEQ. 3. PITCH QIAMETER ~ THREAD 14 28 UNE 2A (COATEO). REFERENCE [SCREW THREAD STANDARDS FOR FEDERAL SERVICES - HANDBOOK H 28). 4 THIS TERMINAL GAN BE FLATTENED ANQ PIERCED QR HOOK TYPE. . POSITION OF LEAQS IN RELATION TO THE HEXAGON IS NOT CONTROLLED. Z-Pac >-o-o [ous sep 0200 [- XXKE.O1 + 9.080 eS OS RO.120 TYP. #0.160 TYP. 0.225 :) fo r~ 0.150 | 0.550 1) + , | cl ie OS WW 0.150 [4 mn | ' 0275 "0.225" 0.300 ; | Lt 60.065 4.30 0.175 39