CREAT BY ART
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
35 45 50 60 90 100 150 200 V
V
RMS
24 31 35 42 63 70 105 140 V
V
DC
35 45 50 60 90 100 150 200 V
I
F(AV)
A
I
RRM
A
dV/dt V/μs
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: D1308015 Version: L13
MBRF1035CT thru MBRF10200CT
Dual Common Cathode Schottk
y
Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MBRF
10150
CT
MBRF
10200
CT
UNIT
ITO-220AB
A
MECHANICAL DATA
Case: ITO-220AB
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
A
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current 10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
Maximum repetitive peak reverse voltage
MBRF
1060
CT
MBRF
1090
CT
MBRF
10100
CT
0.70
Peak repetitive forward current
(Rated VR, Square wave, 20KHz) I
FRM
10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
120
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃I
R
mA
V
Peak repetitive reverse surge current (Note 1) 0.5
Maximum instantaneous forward voltage (Note 2)
I
F
= 5 A, T
J
=25℃
I
F
= 5 A, T
J
=125℃
I
F
= 10 A, T
J
=25℃
I
F
= 10 A, T
J
=125℃
V
F
Voltage rate of change (Rated V
R
)10000
Typical thermal resistance 3.5
Operating junction temperature range - 55 to +150
Storage temperature range - 55 to +150
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Taiwan Semiconductor
PARAMETER SYMBOL
MBRF
1035
CT
MBRF
1045
CT
MBRF
1050
CT
0.85 0.88
0.80 0.85 0.88
0.57 0.65 0.75 0.78
15 10 5
0.1
0.80 0.90 0.95 0.98
0.67 0.75
PART NO.
PART NO.
MBRF1060CT
MBRF1060CT
MBRF1060CT
(TA=25℃ unless otherwise noted)
Document Number: D1308015 Version: L13
EXAMPLE
MBRF1035CT thru MBRF10200CT
Taiwan Semiconductor
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING COD E GREEN COMPOUND
CODE
PACKAGE PACKING
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
MBRF1060CT C0 C0
C0 G Green compound
MBRF1060CTHC0 H C0 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
Note 1: "xx" defines voltage from 35V (MBRF1035CT) to 200V (MBRF10200CT)
MBRF10xxCT
(Note 1) Prefix "H" C0 Suffix "G" ITO-220AB 50 / Tube
MBRF1060CT C0G
0
5
10
15
50 60 70 80 90 100 110 120 130 140 150
AVERAGE FORWARD A
CURRENT (A)
CASE TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
0
25
50
75
100
125
150
0 1 10 100
PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT (mA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=75℃
TJ=125℃
TJ=25℃
0.1
1
10
100
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
INSTANTANEOUS FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
Pulse Width=300μs
1% Duty Cycle
MBRF10150CT - 10200CT
MBRF1090CT - 10100CT
MBRF1050CT - 1060CT
MBRF1035CT - 1045CT
CREAT BY ART
Min Max Min Max
A 4.30 4.70 0.169 0.185
B 2.50 3.16 0.098 0.124
C 2.30 2.96 0.091 0.117
D 0.46 0.76 0.018 0.030
E 6.30 6.90 0.248 0.272
F 9.60 10.30 0.378 0.406
G 3.00 3.40 0.118 0.134
H 0.95 1.45 0.037 0.057
I 0.50 0.90 0.020 0.035
J 2.40 3.20 0.094 0.126
K 14.80 15.50 0.583 0.610
L - 4.10 - 0.161
M 12.60 13.80 0.496 0.543
N - 1.80 - 0.071
O 2.41 2.67 0.095 0.105
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: D1308015 Version: L13
MARKING DIAGRAM
MBRF1035CT thru MBRF10200CT
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
100
1000
10000
0.1 1 10 100
JUNCTION CAPACITANCE (pF) A
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
0.01 0.1 1 10 100
TRANSIENT THERMAL
IMPEDANCE (℃/W)
T-PULSE DURATION(s)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: D1308015 Version: L13
MBRF1035CT thru MBRF10200CT
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
Mouser Electronics
Authorized Distributor
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