1. Product profile
1.1 General description
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial
applications in the HF to 500 MHz band.
1.2 Features
nTypical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq
of 1000 mA:
uAverage output power = 500 W
uPower gain = 26.5 dB
uEfficiency = 70 %
nEasy power control
nIntegrated ESD protection
nExcellent ruggedness
nHigh efficiency
nExcellent thermal stability
nDesigned for broadband operation (10 MHz to 500 MHz)
nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
nIndustrial, scientific and medical applications
nBroadcast transmitter applications
BLF574
HF / VHF power LDMOS transistor
Rev. 02 — 24 February 2009 Product data sheet
Table 1. Application information
Mode of operation f VDS PLGpηD
(MHz) (V) (W) (dB) (%)
CW 225 50 500 26.5 70
108 50 600 27.5 73
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 2 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
[1] Rth(j-c) is measured under RF conditions.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 drain1
2 drain2
3 gate1
4 gate2
5 source [1]
5
12
43 4
35
1
2
sym117
Table 3. Ordering information
Type number Package
Name Description Version
BLF574 - flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads SOT539A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage −0.5 +11 V
IDdrain current - 56 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 225 °C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from
junction to case Tcase =80°C; PL= 400 W 0.23 K/W
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 3 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
6. Characteristics
Table 6. DC characteristics
T
j
= 25
°
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 2.5 mA 110 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 250 mA 1.25 1.7 2.25 V
VGSq gate-source quiescent voltage VDS = 50 V; ID= 500 mA 1.35 1.85 2.35 V
IDSS drain leakage current VGS =0V; V
DS =50V - - 2.8 µA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 29 37.5 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 280 nA
gfs forward transconductance VDS =10V; I
D= 12.5 A - 17 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID= 8.33 A - 0.14 - Ω
Crs feedback capacitance VGS =0V; V
DS =50V;
f=1MHz - 1.5 - pF
Ciss input capacitance VGS =0V; V
DS =50V;
f=1MHz - 204 - pF
Coss output capacitance VGS =0V; V
DS =50V;
f=1MHz -72-pF
Table 7. RF characteristics
Mode of operation: CW; f = 225 MHz; RF performance at V
DS
=50V;I
Dq
= 1000 mA for total device;
T
case
=25
°
C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL = 400 W 25 26.5 28 dB
RLin input return loss PL = 400 W 13 20 - dB
ηDdrain efficiency PL = 400 W 66 70 - %
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 4 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
6.1 Ruggedness in class-AB operation
The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: VDS = 50 V; IDq = 1000 mA;
PL= 400 W; f = 225 MHz.
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a function of drain-source voltage; typical values per
section
VDS (V)
0504020 3010
001aaj126
200
300
100
400
500
Coss
(pF)
0
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 5 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
7. Application information
7.1 RF performance
RF performance in a 500 W application circuit at 225 MHz.
7.1.1 1-Tone CW
VDS = 50 V; IDq = 1000 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz.
(1) IDq = 400 mA
(2) IDq = 600 mA
(3) IDq = 800 mA
(4) IDq = 1000 mA
(5) IDq = 1200 mA
(6) IDq = 1400 mA
(7) IDq = 1800 mA
Fig 2. Power gain and drain efficiency as functions of
load power; typical values Fig 3. Power gain as function of load power; typical
values
001aaj127
PL(PEP) (W)
0 600400200
26
24
28
30
Gp
(dB)
22
40
20
60
80
0
ηD
(%)
Gp
ηD
PL (W)
0 500400200 300100
001aaj128
26
24
28
30
Gp
(dB)
22
(7)
(6)
(5)
(4)
(3)
(2)
(1)
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 6 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
7.1.2 2-Tone CW
VDS = 50 V; IDq = 1000 mA; f = 225 MHz.
(1) PL(1dB) = 57.32 dBm (540 W)
Fig 4. Load power as function of source power; typical values
Ps (dBm)
24 343228 3026
001aaj129
54
56
52
58
60
PL
(dBm)
50
PL
Ideal PL(1)
VDS = 50 V; IDq = 1000 mA; f1 = 224.95 MHz;
f2= 225.05 MHz. VDS = 50 V; f1 = 224.95 MHz; f2= 225.05 MHz.
(1) IDq = 600 mA
(2) IDq = 800 mA
(3) IDq = 1000 mA
(4) IDq = 1200 mA
(5) IDq = 1400 mA
Fig 5. Power gain and drain efficiency as functions of
peak envelope load power; typical values Fig 6. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
001aaj130
PL(PEP) (W)
0 800400200 600
26
24
28
30
Gp
(dB)
22
40
20
60
80
0
ηD
(%)
Gp
ηD
PL(PEP) (W)
0 800600200 400
001aaj131
−40
−60
−20
0
IMD3
(dBc)
−80
(1)
(2)
(3)
(4)
(5)
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 7 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
7.1.3 Application circuit
[1] American Technical Ceramics type 100B or capacitor of same quality.
Table 8. List of components
For application circuit, see Figure 7.
Printed-Circuit Board (PCB): Rogers 5880;
ε
r
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom
metallization); thickness copper plating = 35
µ
m.
Component Description Value Remarks
C1, C2,
C23, C24 multilayer ceramic chip capacitor 100 pF [1]
C3 multilayer ceramic chip capacitor 24 pF [1]
C4, C5 multilayer ceramic chip capacitor 39 pF [1]
C6, C9 multilayer ceramic chip capacitor 4.7 µF TDK4532X7R1E475Mt020U
C7, C8,
C10, C11 multilayer ceramic chip capacitor 1 nF [1]
C12, C16 electrolytic capacitor 220 µF; 63 V
C13, C15 multilayer ceramic chip capacitor 62 pF [1]
C14 multilayer ceramic chip capacitor 15 pF [1]
C17, C19 multilayer ceramic chip capacitor 47 pF [1]
C18 multilayer ceramic chip capacitor 33 pF [1]
C20, C22 multilayer ceramic chip capacitor 10 pF [1]
C21 multilayer ceramic chip capacitor 18 pF [1]
L1, L2,
L3, L4 3 turns 1 mm copper wire D = 3 mm;
length = 3 mm
L5, L6 stripline - (L × W) 125 mm × 7mm
L7, L8,
L9, L10 stripline - (L × W) 8 mm × 15 mm
L11, L12 stripline - (L × W) 132 mm × 7mm
R1, R2 metal film resistor 10 Ω; 0.6 W
R3, R4 metal film resistor 3 Ω; 0.6 W
T1, T2,
T3, T4 semi rigid coax 50 Ω; 120 mm EZ-141-AL-TP-M17
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 8 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
Fig 7. Component layout for class-AB application circuit
001aaj132
T1 C6
C9
C7
C8
R1
L6
C4 C5C3
C1
C2 L5
L8
L7
R2
T2
+
+
C10
C11
L3
L2
C16
C12
R4
C19
C17
C18
L4
L1
R3
L11 C23
C24
C13
C14
C15
C20
C21
C22
L12
T4
T3
L9
L10
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 9 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
7.2 Reliability
TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 8. BLF574 electromigration (ID, total device)
001aaj133
102
10
104
103
105
Years
1
Idc (A)
0 20168124
(1) (2) (3) (4) (5) (6)
(7) (8) (9) (10) (11)
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 10 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
8. Test information
8.1 Impedance information
Table 9. Typical impedance
Simulated Z
S
and Z
L
test circuit impedances.
f ZSZL
MHz Ω Ω
225 3.2 + j2.5 7.5 + j4.0
Fig 9. Definition of transistor impedance
001aaf059
drain
ZL
ZS
gate
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 11 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
8.2 RF performance
The following figures are measured in a class-AB production test circuit.
8.2.1 1-Tone CW
VDS = 50 V; IDq = 1000 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz.
(1) IDq = 400 mA
(2) IDq = 600 mA
(3) IDq = 800 mA
(4) IDq = 1000 mA
(5) IDq = 1200 mA
(6) IDq = 1400 mA
(7) IDq = 1800 mA
Fig 10. Power gain and drain efficiency as functions of
load power; typical values Fig 11. Power gain as function of load power; typical
values
PL (W)
0 500400200 300100
001aaj134
26
24
28
30
Gp
(dB)
22
40
20
60
80
0
ηD
(%)
Gp
ηD
PL (W)
0 500400200 300100
001aaj135
26
24
28
30
Gp
(dB)
22
(7)
(6)
(5)
(4)
(3)
(2)
(1)
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 12 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
8.2.2 2-Tone CW
VDS = 50 V; IDq = 1000 mA; f = 225 MHz.
(1) PL(1dB) = 56.43 dBm (440 W)
Fig 12. Load power as function of source power; typical values
Ps (dBm)
24 343228 3026
001aaj136
54
56
52
58
60
PL
(dBm)
50
PL
ideal PL(1)
VDS = 50 V; IDq = 1000 mA; f1 = 224.95 MHz;
f2= 225.05 MHz. VDS = 50 V; f1 = 224.95 MHz; f2= 225.05 MHz.
(1) IDq = 600 mA
(2) IDq = 800 mA
(3) IDq = 1000 mA
(4) IDq = 1200 mA
(5) IDq = 1400 mA
Fig 13. Power gain and drain efficiency as functions of
peak envelope load power; typical values Fig 14. Third order intermodulation distortion as a
function of peak envelope load power; typical
values
001aaj137
PL(PEP) (W)
0 600400200 500300100
26
24
28
30
Gp
(dB)
22
40
20
60
80
0
ηD
(%)
Gp
ηD
001aaj138
PL(PEP) (W)
0 600400200 500300100
−40
−60
−20
0
IMD3
(dBc)
−80
(4)
(5)
(1)
(2)
(3)
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 13 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
8.2.3 Test circuit
[1] American Technical Ceramics type 100B or capacitor of same quality.
Table 10. List of components
For production test circuit, see Figure 15 and Figure 16.
Printed-Circuit Board (PCB): Rogers 5880;
ε
r
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom
metallization); thickness copper plating = 35
µ
m.
Component Description Value Remarks
C1, C2,
C20, C21 multilayer ceramic chip capacitor 100 pF [1]
C3 multilayer ceramic chip capacitor 24 pF [1]
C4, C5 multilayer ceramic chip capacitor 39 pF [1]
C6, C7,
C10, C11 multilayer ceramic chip capacitor 1 nF [1]
C8, C9 multilayer ceramic chip capacitor 4.7 µF[1] TDK4532X7R1E475Mt020U
C12, C13 electrolytic capacitor 220 µF; 63 V
C14, C15 multilayer ceramic chip capacitor 47 pF [1]
C16 multilayer ceramic chip capacitor 33 pF [1]
C17 multilayer ceramic chip capacitor 18 pF [1]
C18, C19 multilayer ceramic chip capacitor 10 pF [1]
C22 multilayer ceramic chip capacitor 15 pF [1]
C23, C24 multilayer ceramic chip capacitor 62 pF [1]
L1, L2,
L3, L4 3 turns 1 mm copper wire D = 3 mm;
length = 2 mm
L5, L6 stripline - (L × W) 125 mm × 7mm
L7, L8,
L9, L10 stripline - (L × W) 8 mm × 15 mm
L11, L12 stripline - (L × W) 132 mm × 7mm
R1, R2 metal film resistor 10 Ω; 0.6 W
R3, R4 metal film resistor 3 Ω; 0.6 W
T1, T2,
T3, T4 semi rigid coax 50 Ω; 120 mm EZ-141-AL-TP-M17
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 14 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
Fig 15. Class-AB common-source production test circuit
001aaj139
C3
C1
T1
input
50 Ω
output
50 Ω
T2
T3
T4
C2
C20
C18
C19
C21
C4 C5 C22
C24
C23 C14
C15
C10
C11
C12
VDD
VDD
VGG
VGG
L3
C8
C7
R2
R1
C6
C9
L1
L2
L4
R3
L4
C13
C16 C17
L6
L5
L8
L7
L9
L10
L11
L12
Fig 16. Component layout for class-AB production test circuit
001aaj140
T1 C8
C9
C7
C6
R2
37 mm
11 mm
C4 C5C3
C1
C2
R1
T2
C11
C10
L2
L1
R4
R3
C12
C13
C15
C14
C16
L4
L3
C21
C23
C22
C24
C18
C17
C19
T4
T3
11 mm 3 mm 5 mm
C20
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 15 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
9. Package outline
Fig 17. Package outline SOT539A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 00-03-03
99-12-28
0 5 10 mm
scale
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A
p
AF
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56 0.15
0.08 31.55
30.94 13.72 9.53
9.27 17.12
16.10 10.29
10.03
5.33
3.96
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.31
2.01
EE
1
9.50
9.30
inches 0.465
0.455 0.006
0.003 1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365 0.674
0.634 0.405
0.395
0.210
0.156 0.0100.010 0.0201.400
0.069
0.059 1.625
1.615
1.005
0.995 0.130
0.120 0.091
0.079
0.374
0.366
H
3.73
2.72
0.147
0.107
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 16 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
10. Abbreviations
11. Revision history
Table 11. Abbreviations
Acronym Description
CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
GSM Global System for Mobile communications
HF High Frequency
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
TTF Time To Failure
VHF Very High Frequency
VSWR Voltage Standing-Wave Ratio
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF574_2 20090224 Product data sheet - BLF574_1
Modifications: •Data sheet status updated from Preliminary to Product
BLF574_1 20081208 Preliminary data sheet - -
BLF574_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 24 February 2009 17 of 18
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLF574
HF / VHF power LDMOS transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 February 2009
Document identifier: BLF574_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation. . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 5
7.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1.2 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.1.3 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7
7.2 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10
8.1 Impedance information. . . . . . . . . . . . . . . . . . 10
8.2 RF performance . . . . . . . . . . . . . . . . . . . . . . . 11
8.2.1 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
8.2.2 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8.2.3 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
13 Contact information. . . . . . . . . . . . . . . . . . . . . 17
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
