PD - 94831 IRLZ44NPbF HEXFET(R) Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D l VDSS = 55V RDS(on) = 0.022 G ID = 47A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 47 33 160 110 0.71 16 210 25 11 5.0 -55 to + 175 Units A W W/C V mJ A mJ V/ns C 300 (1.6mm from case) 10 lbfin (1.1Nm) Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. Typ. Max. Units 0.50 1.4 62 C/W 11/11/03 IRLZ44NPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. 55 1.0 21 Typ. 0.070 11 84 26 15 Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.022 V GS = 10V, ID = 25A 0.025 V GS = 5.0V, ID = 25A 0.035 V GS = 4.0V, ID = 21A 2.0 V V DS = V GS, ID = 250A S V DS = 25V, ID = 25A 25 V DS = 55V, VGS = 0V A 250 V DS = 44V, VGS = 0V, TJ = 150C 100 V GS = 16V nA -100 V GS = -16V 48 ID = 25A 8.6 nC V DS = 44V 25 V GS = 5.0V, See Fig. 6 and 13 V DD = 28V ID = 25A ns RG = 3.4, VGS = 5.0V RD = 1.1, See Fig. 10 Between lead, 4.5 6mm (0.25in.) nH from package 7.5 and center of die contact 1700 V GS = 0V 400 pF V DS = 25V 150 = 1.0MHz, See Fig. 5 D G S Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 470H RG = 25, IAS = 25A. (See Figure 12) Min. Typ. Max. Units Conditions MOSFET symbol 47 showing the A G integral reverse 160 p-n junction diode. 1.3 V TJ = 25C, IS = 25A, VGS = 0V 80 120 ns TJ = 25C, IF = 25A 210 320 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ISD 25A, di/dt 270A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. D S IRLZ44NPbF 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 2.5V 20s PULSE WIDTH T J = 25C 1 0.1 1 10 100 10 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25C 100 TJ = 175C 10 V DS= 25V 20s PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 1 10 A 100 Fig 2. Typical Output Characteristics 1000 3.0 20s PULSE WIDTH T J = 175C VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 2.5V 1 0.1 A 100 VDS , Drain-to-Source Voltage (V) 2.0 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics A I D = 41A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature IRLZ44NPbF 2400 C, Capacitance (pF) Ciss 15 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd VGS , Gate-to-Source Voltage (V) 2800 2000 1600 Coss 1200 800 Crss 400 0 1 10 100 I D = 25A V DS = 44V V DS = 28V 12 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 VDS , Drain-to-Source Voltage (V) 20 30 40 50 60 70 A Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 10 100 TJ = 175C TJ = 25C VGS = 0V 10 0.4 0.8 1.2 1.6 2.0 A 2.4 100 10s 100s 10 1ms TC = 25C TJ = 175C Single Pulse 1 1 10ms 10 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area A 100 IRLZ44NPbF 50 RD V DS VGS ID , Drain Current (A) 40 D.U.T. RG 30 + -VDD 5.0V Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0.1 L VDS D.U.T. RG + V - DD IAS 5.0 V tp 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) IRLZ44NPbF 500 TOP BOTTOM 400 300 200 100 0 VDD = 25V 25 tp 50 75 100 125 150 Starting TJ , Junction Temperature (C) VDD Fig 12c. Maximum Avalanche Energy Vs. Drain Current VDS IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5.0 V QGS ID 10A 17A 25A D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit A 175 IRLZ44NPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS ISD * IRLZ44NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN HEXFET 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/03 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/