LITE-ON SEMICONDUCTOR LS4148WS REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE 0805 FEATURES For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current A 0805 B MECHANICAL DATA C Case : 0805 Case Material: "Green" molding compound, UL flammability classification 94V-0, (No Br. Sb. Cl) Terminals: Lead Free Plating Polarity : Color band denotes cathode Weight : Approx.6mg Min. Max. A 1.80 2.20 B 1.05 1.45 C 0.75 0.95 D 0.25 0.65 All Dimensions in millimeter D Maximum Ratings and Thermal Characteristics Dim. @ TA = 25 unless otherwise specified Characteristic Symbol Units Value Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VDC 100 V RMS Reverse Voltage VRMS 70 V Forward Continuous Current IFM 300 mA Average Rectified Output Currnet IAV 150 mA IFSM 800 2.0 mA A Pd 400 mW Thermal Resistance Junction to Ambiant Air RJA 375 /W Operating and Storage Temperature Range TJ , TSTG -65 to +175 Tp = 1.0 s Tp = 1.0us Forward Surge Current at Total Power Dissipation Electrical Characteristics @ TA = 25 unless otherwise specified Parameters Symbol Test Condition Min. Max. Unit Reverse Breakdown Voltage VBR IR = 1uA Forward Voltage VF IF = 10mA 1.0 V VR = 20V VR = 20V , TJ =150 25 5.0 50 nA uA uA Reverse Leakage Current IR VR = 75V V 100 Junction Capacitance CJ VR = 0V ; F = 1MHz 4 pF Reverse Recovery Time Trr IF = IR=10mA ; RL = 100 measured at IR=1mA 4 ns REV. 2, OCT-2008, KSYS01 RATING AND CHARACTERISTIC CURVES LS4148WS Fig.4 - TYPICAL REVERSE CHARACTERISTICS Fig.1 - FORWARD CURRENT DERATING CURVE 10000 INSTANTANEOUS REVERSE CURRENT ( nA ) AVERAGE FORWARD CURRENT (mA) 200 150 100 RESISTIVE OR INDUCTIVE LOAD 50 1000 100 VR = 20V 10 0 0 25 50 75 100 125 150 175 1 200 0 CASE TEMPERATURE , ( ) 50 75 100 125 150 200 Fig.5-TYPICAL JUNCTION CAPACITANCE 2.0 JUNCTION CAPACITANCE (pF) 500 400 300 200 100 0 1.8 1.6 f =1MHz TJ =25 1.4 1.2 1.0 0 25 50 75 100 125 150 175 200 0.1 1 AMBIENT TEMPERATURE , ( ) 10 100 REVERSE VOLTAGE (V) Fig.3-TYPICAL FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT (mA) 175 JUNCTION TEMPERATURE , ( ) Fig.2 - POWER DISSIPATION DERATING CURVE POWER DISSIPATION (mW) 25 1000 Recommended Mounting Pad Layout 0.51 Typ. 100 TJ = 100 10 TJ = 25 1.40 Typ. 1 1.22 Typ. Pulse Width: 300us 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE , ( V ) 1.8 2 All dimensions in millimeter