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FEATURES
• Double Side Cooling
• High Surge Capability
APPLICATIONS
• High Power Drives
• High Voltage Power Supplies
• Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
VDRM and VRRM
V
Conditions
DCR590G65
DCR590G62
DCR590G58
6500
6200
5800
Tvj = -40° C to 125° C,
IDRM = IRRM = 100mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR590G65
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
KEY PARAMETERS
VDRM 6500V
IT(AV) 595A
ITSM 6600A
dV/dt* 1500V/µs
dI/dt 200A/us
* Higher dV/dt selections available
Outline type code: G
(See Package Details for further information)
Fig. 1 Package outline
DCR590G65
Phase Control Thyristor
Preliminary Information
DS5870-
1.0 September 2005 (LN24229)
SEMICONDUCTOR
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CURRENT RATINGS
Tcase = 60° C unless stated otherwise
Symbol Parameter Test Conditions Max. Units
Double Side Cooled
IT(AV) Mean on-state current Half wave resistive load 595 A
IT(RMS) RMS value - 935 A
ITContinuous (direct) on-state current - 912 A
SURGE RATINGS
Symbol Parameter Test Conditions Max. Units
ITSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125° C 6.6 kA
I2t I2t for fusing VR = 0 0.22 MA2s
THERMAL AND MECHANICAL RATINGS
Symbol Parameter Test Conditions Min. Max. Units
Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.0268 ° C/W
Single side cooled Anode DC - 0.0527 ° C/W
Cathode DC - 0.0652 ° C/W
Rth(c-h) Thermal resistance – case to heatsink Clamping force 11.5kN Double side - 0.0072 ° C/W
(with mounting compound) Single side - 0.0144 ° C/W
Tvj Virtual junction temperature On-state (conducting) - 135 ° C
Reverse (blocking) - 125 ° C
Tstg Storage temperature range -55 125 ° C
FmClamping force 10 13 kN
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DYNAMIC CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Units
IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125° C - 100 mA
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125° C, gate open - 1500 V/µs
dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 100 A/µs
Gate source 30V, 10Ω,Non-repetitive - 200 A/µs
tr < 0.5µs, Tj = 125° C
VT(TO) Threshold voltage – Low level 50A to 400A at Tcase = 125° C - 0.912 V
Threshold voltage – High level 400A to 1600A at Tcase = 125° C - 1.108 V
rTOn-state slope resistance – Low level 50A to 400A at Tcase = 125° C - 2.157 mΩ
On-state slope resistance – High level 400A to 1600A at Tcase = 125° C - 1.647 mΩ
tgd Delay time VD = 67% VDRM, gate source 30V, 10ΩTBD TBD µs
tr = 0.5µs, Tj = 25° C
tqTurn-off time Tj = 125° C, VR = 200V, dI/dt = 5A/µs, 750 1600 µs
dVDR/dt = 20V/µs linear
QSStored charge IT = 2000A, Tj = 125° C, dI/dt = 5A/µs, 1600 2600 µC
ILLatching current Tj = 25° C, VD = 5V TBD TBD mA
IHHolding current Tj = 25° C, RG-K = ∞, ITM = 500A, IT = 5A TBD TBD mA
SEMICONDUCTOR
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GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol Parameter Test Conditions Max. Units
VGT Gate trigger voltage VDRM = 5V, Tcase = 25° C 1.5 V
VGD Gate non-trigger voltage At VDRM, Tcase = 125° C TBD V
IGT Gate trigger current VDRM = 5V, Tcase = 25° C 250 mA
IGD Gate non-trigger current VDRM = 5V, Tcase = 25° C TBD mA
CURVES
0
400
800
1200
1600
1.0 2.0 3.0 4.0
Instantaneous on-state voltage, VT - (V)
Instantaneous on-state current, IT - (A)
25°C min
25°C max
125°C min
125°C max
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION Where A = 0.542452
B = 0.065613
VTM = A + Bln (IT) + C.IT+D.√ITC = 0.001318
D = 0.015356
these values are valid for Tj = 125° C for I T 50A to 1600A
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0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
0 500 1000 1500 2000
Mean on-state current, IT(AV) - (A)
Mean power dissipation - (kW)
180
120
90
60
30
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800 900
Mean on-state current, IT(AV)
- (A)
Maximum case temperature, T case ( oC )
180
120
90
60
30
Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
Mean on-state current, IT(AV)
- (A)
Maximum heatsink temperature, T Heatsink - ( oC )
180
120
90
60
30
0
1
2
3
4
5
6
7
8
9
10
11
12
0 500 1000 1500 2000 2500
Mean on-state current, IT(AV) - (A)
Mean power dissipation - (kW)
d.c.
180
120
90
60
30
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave Fig.6 On-state power dissipation – rectangular wave
SEMICONDUCTOR
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0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200 1400
Mean on-state current, IT(AV) - (A)
Maximum permissible case temperature , Tcase - (°C)
d.c.
180
120
90
60
30
0
10
20
30
40
50
60
70
80
90
100
110
120
130
0 200 400 600 800 1000 1200
Mean on-state current, IT(AV) - (A)
Maximum heatsik temperature Theatsink - (oC)
d.c.
180
120
90
60
30
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
0
10
20
30
40
50
60
70
0.001 0.01 0.1 1 10 100
Time ( s )
Themal impedance Z th(j-c) ( °C/kW )
Double Side Cooled
Anode Cooled
Cathode Cooled
1 2 3 4
Double side cooled Ri (°C/kW) 2.2995 5.4226 16.9074 2.1488
Ti (s) 0.0066401 0.0457025 0.4962482 1.8248
Anode side cooled Ri (°C/kW) 2.3214 5.2661 10.2686 34.8031
Ti (s) 0.0066948 0.045528 0.3484209 4.582
Cathode side cooled Ri (°C/kW) 2.4895 5.9105 7.4256 49.3432
Ti (s) 0.0070404 0.052895 0.3933903 4.2295
Zth = Σ [Ri x ( 1-exp. (t/ti))] [1]
∆
Rth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device
operates at conduction angles other than d.c.
Double side cooling Anode Side Cooling Cathode Sided Cooling
∆Zth (z) ∆Zth (z) ∆Zth (z)
°
sine.
rect.
°
sine.
rect.
°
sine.
rect.
180 4.15 2.72 180 4.15 2.72 180 4.13 2.71
120 4.90 4.02 120 4.89 4.02 120 4.87 4.00
90 5.74 4.79 90 5.73 4.78 90 5.69 4.76
60 6.53 5.65 60 6.52 5.65 60 6.46 5.60
30 7.16 6.64 30 7.15 6.62 30 7.07 6.56
15
7.46
7.18
15
7.44
7.16
15
7.36
7.09
Fig.9 Maximum (limit) transient thermal impedance – junction to case (° C/kW)
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0
1
2
3
4
5
6
7
1 10 100
Number of cycles
Surge current, ITSM- (kA)
Conditions:
Tcase = 125°C
VR =0
Pulse width = 10ms
0
2
4
6
8
10
12
14
16
18
20
1 10 100
Pulse width, tP - (ms)
Surge current, ITSM - (kA)
0
0.1
0.2
0.3
0.4
0.5
I2t (MA2s)
I
2
t
ITSM
Conditions:
Tcase= 125°C
VR = 0
half-sine wave
Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current
SEMICONDUCTOR
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PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Ø1.5
Ø57.0 MAX
Ø33.95 NOM
Ø33.95 NOM
HOLE Ø3.60 X 2.00
DEEP (IN BOTH
ELECTRODES)
3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK
CATHODE
GATE
ANODE
FOR PACKAGE HEIGHT
SEE TABLE
20° OFFSET (NOM.)
TO GATE TUBE
Device
Maximum
Thickness
(mm)
Minimum
Thickness
(mm)
DCR803SG18
26.415
25.865
DCR806SG28
26.49
25.94
DCR818SG48
26.84
26.17
DCR820SG65
27.1
26.55
DCR1080G22
26.415
25.865
DCR960G28
26.49
25.94
DCR780G42
26.72
26.17
DCR690G52
26.84
26.29
DCR590G65
27.1
26.55
DCR470G85
27.46
26.91
Clamping force: 11.5 kN ±10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: G
Fig.15 Package outline
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be
followed. http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.