DTC143T series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
llOutline
Parameter Value VMT3 EMT3F
VCEO 50V
IC100mA
R14.7kΩ DTC143TM DTC143TEB
(SC-105AA) (SC-89)
EMT3 UMT3F
llFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
for operation, making the circuit design easy.
5) Complementary PNP Types: DTA143T series
6) Complex transistors: EMH3/ UMH3N/ IMH3A/
EMG3/ UMG3N/ FMG3A （PNP type）
7) Lead Free/RoHS Compliant.
DTC143TE DTC143TUB
SOT-416(SC-75A) (SC-85)
UMT3 SMT3
DTC143TUA DTC143TKA
SOT-323(SC-70) SOT-346(SC-59)
llInner circuit
B: BASE
llApplication C: COLLECTOR
Switching circuit, Inverter circuit, Interface circuit, E: EMITTER
Driver circuit
llPackaging specifications
Part No. Package Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
DTC143TM VMT3 1212 T2L 180 8 8000 03
DTC143TEB EMT3F 1616 TL 180 8 3000 03
DTC143TE EMT3 1616 TL 180 8 3000 03
DTC143TUB UMT3F 2021 TL 180 8 3000 03
DTC143TUA UMT3 2021 T106 180 8 3000 03
DTC143TKA SMT3 2928 T146 180 8 3000 03
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© 2012 ROHM Co., Ltd. All rights reserved. 1/9 20121023 - Rev.001
DTC143T series Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC100 mA
Power dissipation
DTC143TM
PD*1
150
mW
DTC143TEB 150
DTC143TE 150
DTC143TUB 200
DTC143TUA 200
DTC143TKA 200
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Collector-base breakdown
voltage BVCBO IC = 50μA 50 - - V
Collector-emitter breakdown
voltage BVCEO IC = 1mA 50 - - V
Emitter-base breakdown voltage BVEBO IE = 50μA 5 - - V
Collector cut-off current ICBO VCB = 50V - - 0.5 μA
Emitter cut-off current IEBO VEB = 4V - - 0.5 μA
Collector-emitter saturation voltage VCE(sat) IC / IB = 5mA / 0.25mA - - 0.15 V
DC current gain hFE VCE = 5V, IC = 1mA 100 250 600 -
Input resistance R1- 3.5 4.7 5.9 kΩ
Transition frequency fT*2 VCE = 10V, IE = -5mA,
f = 100MHz - 250 - MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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© 2012 ROHM Co., Ltd. All rights reserved. 2/9 20121023 - Rev.001
DTC143T series Datasheet
llElectrical characteristic curves(Ta=25℃℃)
Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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© 2012 ROHM Co., Ltd. All rights reserved. 3/9 20121023 - Rev.001
DTC143T series Datasheet
llDimensions
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© 2012 ROHM Co., Ltd. All rights reserved. 4/9 20121023 - Rev.001
DTC143T series Datasheet
llDimensions
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© 2012 ROHM Co., Ltd. All rights reserved. 5/9 20121023 - Rev.001
DTC143T series Datasheet
llDimensions
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© 2012 ROHM Co., Ltd. All rights reserved. 6/9 20121023 - Rev.001
DTC143T series Datasheet
llDimensions
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© 2012 ROHM Co., Ltd. All rights reserved. 7/9 20121023 - Rev.001
DTC143T series Datasheet
llDimensions
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© 2012 ROHM Co., Ltd. All rights reserved. 8/9 20121023 - Rev.001
DTC143T series Datasheet
llDimensions
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved. 9/9 20121023 - Rev.001
