BUZ900X4S
BUZ901X4S
V
DSX
Drain – Source V
oltage
V
GS
Gate – Source V
oltage
I
D
Continuous Drain Current
I
D(PK)
Body Drain Diode
P
D
T
otal P
ow
er Dissipation
@ T
case
= 25°C
T
stg
Storage T
emperature Range
T
j
Maximum Operating J
unction T
emperature
R
θ
JC
Ther
mal Resistance Junction – Case
BUZ900X4S
BUZ901X4S
160V
200V
±14V
32A
32A
500W
–55 to 150°C
150°C
0.3°C/W
NEW PR
ODUCT UNDER DEVELOPMENT
MECHANICAL D
A
T
A
Dimensions in mm (inches)
1
3
4
2
R
38.
0 (1.
496)
38.
2 (1.
504)
30.
1 (
1.
185)
30.
3 (
1.
193)
14.
9 (0.
587)
15.
1 (0.
594)
3.
3 (0.
129)
3.
6 (0
.
143)
7.
8 (
0.
3
07)
8.
2 (
0.
3
22)
31.
5 (
1.
240)
31.
7 (
1.
248)
4.
0 (0.
157)
(2 P
lac
e
s)
R =
4.
0 (
0.
1
57
)
4.
2 (
0.
1
65
)
)
)
4.
1 (
0.
161
4.
3 (
0.
169
4.
8 (
0.
187)
4.
9 (
0.
193)
(4
p
l
a
c
e
s)
W =
H =
8.
9 (
0.
350)
9.
6 (
0.
378)
11.
8 (
0.
463)
12.
2 (
0.
480)
Hex Nut M
4
(4
p
laces)
12.
6
(
0.
496)
12.
8
(
0.
504)
25.
2 (
0.
992)
25.
4 (
1.
000)
0.
75
(
0
.
0
30)
0.
85
(
0
.
0
33)
5.
1 (
0.
2
01
)
5.
9 (
0.
2
32
)
1.
95 (
0.
077)
2.
14 (
0.
084)
N–CHANNEL
PO
WER MOSFET
FEA
TURES
•
HIGH SPEED SWITCHING
•
N–CHANNEL PO
WER MOSFET
•
SEMEF
AB DESIGNED AND DIFFUSED
•
HIGH V
OL
T
A
GE (160V & 200V)
•
HIGH ENERGY RA
TING
•
ENHANCEMENT MODE
•
INTEGRAL PRO
TECTION DIODE
•
P–CHANNEL ALSO A
V
AILABLE
SO
T227
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
Pin 4 – Drain
ABSOLUTE MAXIMUM RA
TINGS
(T
case
= 25°C unless
otherwise stated)
Prelim. 4/94
TEC
MA
GNA
Magnatec.
Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
PO
WER MOSFETS FOR
A
UDIO APPLICA
TIONS
* Pulse Test: Pulse Width = 300
µ
S , Duty Cycle
≤
2%
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= –10V
BUZ900X4S
I
D
= 10mA
BUZ901X4S
V
DS
= 0
I
G
= ±100
µ
A
V
DS
= 10V
I
D
= 100mA
V
GD
= 0
I
D
= 32A
V
GS
= –10V
V
DS
= 160V
BUZ900X4S
V
DS
= 200V
BUZ901X4S
V
DS
= 10V
I
D
= 5A
V
DS
= 10V
f = 1MHz
V
DS
= 20V
I
D
= 7A
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
Drain – Source Cut–Off Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
BV
DSX
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
I
DSX
yfs*
C
iss
C
oss
C
rss
t
on
t
off
V
V
V
V
mA
mA
S
pF
nS
ELECTRICAL
RA
TINGS
(T
case
= 25°C unless otherwise stated)
Prelim. 4/94
160
200
±14
0.1
1.5
12
10
10
2
6
TBE
TBE
TBE
TBE
TBE
TEC
MA
GNA
Ma
gnatec.
Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.
G
S
D
BUZ900X4S
BUZ901X4S
NEW PR
ODUCT UNDER DEVELOPMENT
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