TPSMB6.8 thru TPSMB43A Vishay General Semiconductor Surface Mount PAR(R) Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES * Junction passivation optimized design passivated anisotropic rectifier technology * TJ = 185 C capability suitable for high reliability and automotive requirement * Available in uni-directional polarity only * 600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % DO-214AA (SMB) * Excellent clamping capability * Very fast response time * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRIMARY CHARACTERISTICS VBR 6.8 V to 43 V PPPM 600 W IFSM 75 A TJ max. 185 C TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. * AEC-Q101 qualified * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT PPPM 600 W IPPM See next table A IFSM 75 A VF 3.5 V TJ, TSTG - 65 to + 185 C Peak pulse power dissipation with a 10/1000 s waveform (1)(2) (fig. 1) Peak pulse current with a 10/1000 s waveform (1) (fig. 3) Peak forward surge current 8.3 ms single half sine-wave (2)(3) Instantaneous forward voltage at 50 A (3) Operating junction and storage temperature range Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 C per fig. 2 Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) land areas per figure (3) Mounted on 8.3 ms single half sine-wave duty cycle = 4 pulses per minute maximum (2) Document Number: 88406 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 TPSMB6.8 thru TPSMB43A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR (1) AT IT (V) MIN. TEST CURRENT IT (mA) STANDOFF VOLTAGE VWM (V) MAX. MAXIMUM REVERSE LEAKAGE AT VWM ID (A) TJ = 150 C MAXIMUM REVERSE LEAKAGE AT VWM ID (A) MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) TPSMB6.8 KDP 6.12 7.48 10 5.50 500 1000 55.6 10.8 TPSMB6.8A KEP 6.45 7.14 10 5.80 500 1000 57.1 10.5 TPSMB7.5 KFP 6.75 8.25 10 6.05 250 500 51.3 11.7 TPSMB7.5A KGP 7.13 7.88 10 6.40 250 500 53.1 11.3 TPSMB8.2 KHP 7.38 9.02 10 6.63 100 200 48.0 12.5 TPSMB8.2A KKP 7.79 8.61 10 7.02 100 200 49.6 12.1 TPSMB9.1 KLP 8.19 10.0 1.0 7.37 25.0 50.0 43.5 13.8 TPSMB9.1A KMP 8.65 9.55 1.0 7.78 25.0 50.0 44.8 13.4 TPSMB10 KNP 9.00 11.0 1.0 8.10 5.0 20.0 40.0 15.0 TPSMB10A KPP 9.50 10.5 1.0 8.55 5.0 20.0 41.4 14.5 TPSMB11 KQP 9.90 12.1 1.0 8.92 2.0 5.0 37.0 16.2 TPSMB11A KRP 10.5 11.6 1.0 9.40 2.0 5.0 38.5 15.6 TPSMB12 KSP 10.8 13.2 1.0 9.72 2.0 5.0 34.7 17.3 TPSMB12A KTP 11.4 12.6 1.0 10.2 2.0 5.0 35.9 16.7 TPSMB13 KUP 11.7 14.3 1.0 10.5 2.0 5.0 31.6 19.0 TPSMB13A KVP 12.4 13.7 1.0 11.1 2.0 5.0 33.0 18.2 TPSMB15 KWP 13.5 16.5 1.0 12.1 1.0 5.0 27.3 22.0 TPSMB15A KXP 14.3 15.8 1.0 12.8 1.0 5.0 28.3 21.2 TPSMB16 KYP 14.4 17.6 1.0 12.9 1.0 5.0 25.5 23.5 TPSMB16A KZP 15.2 16.8 1.0 13.6 1.0 5.0 26.7 22.5 TPSMB18 LDP 16.2 19.8 1.0 14.5 1.0 5.0 22.6 26.5 TPSMB18A LEP 17.1 18.9 1.0 15.3 1.0 5.0 23.8 25.2 TPSMB20 LFP 18.0 22.0 1.0 16.2 1.0 5.0 20.6 29.1 TPSMB20A LGP 19.0 21.0 1.0 17.1 1.0 5.0 21.7 27.7 TPSMB22 LHP 19.8 24.2 1.0 17.8 1.0 5.0 18.8 31.9 TPSMB22A LKP 20.9 23.1 1.0 18.8 1.0 5.0 19.6 30.6 TPSMB24 LLP 21.6 26.4 1.0 19.4 1.0 5.0 17.3 34.7 TPSMB24A LMP 22.8 25.2 1.0 20.5 1.0 5.0 18.1 33.2 TPSMB27 LNP 24.3 29.7 1.0 21.8 1.0 5.0 15.3 39.1 TPSMB27A LPP 25.7 28.4 1.0 23.1 1.0 5.0 16.0 37.5 TPSMB30 LQP 27.0 33.0 1.0 24.3 1.0 5.0 13.8 43.5 TPSMB30A LRP 28.5 31.5 1.0 25.6 1.0 5.0 14.5 41.4 TPSMB33 LSP 29.7 36.3 1.0 26.8 1.0 5.0 12.6 47.7 TPSMB33A LTP 31.4 34.7 1.0 28.2 1.0 5.0 13.1 45.7 TPSMB36 LUP 32.4 39.6 1.0 29.1 1.0 5.0 11.5 52.0 TPSMB36A LVP 34.2 37.8 1.0 30.8 1.0 5.0 12.0 49.9 TPSMB39 LWP 35.1 42.9 1.0 31.6 1.0 5.0 10.6 56.4 TPSMB39A LXP 37.1 41.0 1.0 33.3 1.0 5.0 11.1 53.9 TPSMB43 LYP 38.7 47.3 1.0 34.8 1.0 5.0 9.70 61.9 TPSMB43A LZP 40.9 45.2 1.0 36.8 1.0 5.0 10.1 59.3 Notes (1) VBR measured after IT applied for 300 s, IT = square wave pulse or equivalent Surge current waveform per fig. 3 and derated per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 (2) www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88406 Revision: 09-Feb-11 TPSMB6.8 thru TPSMB43A Vishay General Semiconductor ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE TPSMB6.8AHE3/52T (1) 0.096 52T 750 7" diameter plastic tape and reel TPSMB6.8AHE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 150 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 C 10 1.0 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 s TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. td 0 1.0 s 10 s 100 s 1.0 ms 10 ms 0 1.0 2.0 3.0 td - Pulse Width (s) t - Time (ms) Figure 1. Peak Pulse Power Rating Curve Figure 3. Pulse Waveform 100 4.0 10 000 Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 75 50 25 VR measured at Zero Bias 1000 VR measured at Stand-Off Voltage, VWM 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 10 0 0 50 100 150 200 1 10 100 TJ - Initial Temperature (C) VBR - Breakdown Voltage (V) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 4. Typical Junction Capacitance Document Number: 88406 Revision: 09-Feb-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 TPSMB6.8 thru TPSMB43A Vishay General Semiconductor 100 Peak Forward Surge Current (A) TJ = TJ max. 8.3 ms Single Half Sine-Wave 10 1 100 10 Number of Cycles at 60 Hz Figure 5. Maximum Non-Repetitive Peak Forward Surge Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Mounting Pad Layout Cathode Band 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.220 REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 88406 Revision: 09-Feb-11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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