TPSMB6.8 thru TPSMB43A
Vishay General Semiconductor
Document Number: 88406
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
FEATURES
• Junction passivation optimized design
passivated anisotropic rectifier technology
•T
J = 185 °C capability suitable for high
reliability and automotive requirement
• Available in uni-directional polarity only
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability
rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) land areas per figure
(3) Mounted on 8.3 ms single half sine-wave duty cycle = 4 pulses per minute maximum
PRIMARY CHARACTERISTICS
VBR 6.8 V to 43 V
PPPM 600 W
IFSM 75 A
TJ max. 185 °C
DO-214AA (SMB)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (fig. 1) PPPM 600 W
Peak pulse current with a 10/1000 µs waveform (1) (fig. 3) IPPM See next table A
Peak forward surge current 8.3 ms single half sine-wave (2)(3) I
FSM 75 A
Instantaneous forward voltage at 50 A (3) V
F 3.5 V
Operating junction and storage temperature range TJ, TSTG - 65 to + 185 °C
TPSMB6.8 thru TPSMB43A
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88406
Revision: 09-Feb-11
2
Notes
(1) VBR measured after IT applied for 300 µs, IT = square wave pulse or equivalent
(2) Surge current waveform per fig. 3 and derated per fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR (1) AT IT (V)
TEST
CURRENT
IT (mA)
STAND-
OFF
VOLTAGE
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (µA)
TJ = 150 °C
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (µA)
MAXIMUM
PEAK
PULSE
SURGE
CURRENT
IPPM (2) (A)
MAXIMUM
CLAMPING
VOLTAG E
AT IPPM
VC (V)
MIN. MAX.
TPSMB6.8 KDP 6.12 7.48 10 5.50 500 1000 55.6 10.8
TPSMB6.8A KEP 6.45 7.14 10 5.80 500 1000 57.1 10.5
TPSMB7.5 KFP 6.75 8.25 10 6.05 250 500 51.3 11.7
TPSMB7.5A KGP 7.13 7.88 10 6.40 250 500 53.1 11.3
TPSMB8.2 KHP 7.38 9.02 10 6.63 100 200 48.0 12.5
TPSMB8.2A KKP 7.79 8.61 10 7.02 100 200 49.6 12.1
TPSMB9.1 KLP 8.19 10.0 1.0 7.37 25.0 50.0 43.5 13.8
TPSMB9.1A KMP 8.65 9.55 1.0 7.78 25.0 50.0 44.8 13.4
TPSMB10 KNP 9.00 11.0 1.0 8.10 5.0 20.0 40.0 15.0
TPSMB10A KPP 9.50 10.5 1.0 8.55 5.0 20.0 41.4 14.5
TPSMB11 KQP 9.90 12.1 1.0 8.92 2.0 5.0 37.0 16.2
TPSMB11A KRP 10.5 11.6 1.0 9.40 2.0 5.0 38.5 15.6
TPSMB12 KSP 10.8 13.2 1.0 9.72 2.0 5.0 34.7 17.3
TPSMB12A KTP 11.4 12.6 1.0 10.2 2.0 5.0 35.9 16.7
TPSMB13 KUP 11.7 14.3 1.0 10.5 2.0 5.0 31.6 19.0
TPSMB13A KVP 12.4 13.7 1.0 11.1 2.0 5.0 33.0 18.2
TPSMB15 KWP 13.5 16.5 1.0 12.1 1.0 5.0 27.3 22.0
TPSMB15A KXP 14.3 15.8 1.0 12.8 1.0 5.0 28.3 21.2
TPSMB16 KYP 14.4 17.6 1.0 12.9 1.0 5.0 25.5 23.5
TPSMB16A KZP 15.2 16.8 1.0 13.6 1.0 5.0 26.7 22.5
TPSMB18 LDP 16.2 19.8 1.0 14.5 1.0 5.0 22.6 26.5
TPSMB18A LEP 17.1 18.9 1.0 15.3 1.0 5.0 23.8 25.2
TPSMB20 LFP 18.0 22.0 1.0 16.2 1.0 5.0 20.6 29.1
TPSMB20A LGP 19.0 21.0 1.0 17.1 1.0 5.0 21.7 27.7
TPSMB22 LHP 19.8 24.2 1.0 17.8 1.0 5.0 18.8 31.9
TPSMB22A LKP 20.9 23.1 1.0 18.8 1.0 5.0 19.6 30.6
TPSMB24 LLP 21.6 26.4 1.0 19.4 1.0 5.0 17.3 34.7
TPSMB24A LMP 22.8 25.2 1.0 20.5 1.0 5.0 18.1 33.2
TPSMB27 LNP 24.3 29.7 1.0 21.8 1.0 5.0 15.3 39.1
TPSMB27A LPP 25.7 28.4 1.0 23.1 1.0 5.0 16.0 37.5
TPSMB30 LQP 27.0 33.0 1.0 24.3 1.0 5.0 13.8 43.5
TPSMB30A LRP 28.5 31.5 1.0 25.6 1.0 5.0 14.5 41.4
TPSMB33 LSP 29.7 36.3 1.0 26.8 1.0 5.0 12.6 47.7
TPSMB33A LTP 31.4 34.7 1.0 28.2 1.0 5.0 13.1 45.7
TPSMB36 LUP 32.4 39.6 1.0 29.1 1.0 5.0 11.5 52.0
TPSMB36A LVP 34.2 37.8 1.0 30.8 1.0 5.0 12.0 49.9
TPSMB39 LWP 35.1 42.9 1.0 31.6 1.0 5.0 10.6 56.4
TPSMB39A LXP 37.1 41.0 1.0 33.3 1.0 5.0 11.1 53.9
TPSMB43 LYP 38.7 47.3 1.0 34.8 1.0 5.0 9.70 61.9
TPSMB43A LZP 40.9 45.2 1.0 36.8 1.0 5.0 10.1 59.3
TPSMB6.8 thru TPSMB43A
Vishay General Semiconductor
Document Number: 88406
Revision: 09-Feb-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
TPSMB6.8AHE3/52T (1) 0.096 52T 750 7" diameter plastic tape and reel
TPSMB6.8AHE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.1
1.0
10
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25 °C
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
P
PPM
- Peak Pulse Power (kW)
t
d
- Pulse Width (s)
0 50 100
100
75
50
25
0
150 200
TJ - Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
r
= 10 µs
Peak Value
IPPM
Half Value -
IPPM
I
PP
2
t
d
10/1000 µs Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t - Time (ms)
I
PPM
- Peak Pulse Current, % I
RSM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
10 000
1 10 100
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
VR measured
at Zero Bias
VR measured at
Stand-Off Voltage, VWM
V
BR
- Breakdown Voltage (V)
TPSMB6.8 thru TPSMB43A
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88406
Revision: 09-Feb-11
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Maximum Non-Repetitive Peak Forward Surge Current
100
10
101 100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
TJ = TJ max.
8.3 ms Single Half Sine-Wave
0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.205 (5.21)
0.220 (5.59)
0 (0)
0.008 (0.2)
0.130 (3.30)
0.155 (3.94)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
Cathode Band
DO-214AA (SMB)
0.085 (2.159)
MAX.
0.220 REF.
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
Mounting Pad Layout
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Revision: 12-Mar-12 1Document Number: 91000
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