© 2000 IXYS All rights reserved 1 - 2
VRSM VRRM Type
V V
1200 1200 DSEI 2x 30-12B DSEI 2x 31-12B
Symbol Test Conditions Maximum Ratings (per diode)
IFRMS TVJ = TVJM 70 A
IFAVM
ÿÿ
TC = 50°C; rectangular, d = 0.5 28 A
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM 375 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
t = 8.3 ms(60 Hz), sine 210 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 185 A
t = 8.3 ms(60 Hz), sine 195 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 200 A2s
t = 8.3 ms(60 Hz), sine 180 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 170 A2s
t = 8.3 ms(60 Hz), sine 160 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
Ptot TC = 25°C 100 W
VISOL 50/60 Hz, RMS 2500 V~
IISOL £ 1 mA
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
IRTVJ = 25°CV
R= VRRM 0.75 mA
TVJ = 25°CV
R= 0.8 • VRRM 0.25 mA
TVJ = 125°CV
R= 0.8 • VRRM 7mA
VFIF = 30 A; TVJ =150°C 2.2 V
TVJ =25°C 2.55 V
VT0 For power-loss calculations only 1.65 V
rTTVJ = TVJM 18.2 mW
RthJC 1.25 K/W
RthCK 0.05 K/W
trr IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25 °C40 60 ns
IRM VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms1618A
L £ 0.05 mH; TVJ = 100°C
DSEI 2x 30 IFAVM = 2x 28 A
DSEI 2x 31 VRRM = 1200 V
trr = 40 ns
IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Features
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Applications
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
DSEI 2x 30 DSEI 2x 31
Fast Recovery
Epitaxial Diode (FRED)
miniBLOC, SOT-227 B
E72873
009
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© 2000 IXYS All rights reserved 2 - 2
DSEI 2x 30, 1200 V
DSEI 2x 31, 1200 V
Fig. 7 Transient thermal impedance junction to case.
0 200 400 600
0
10
20
30
40
50
60
TVJ=125°C
IF=30A
diF/dt
tfr
VFR
tfr
ns
0
200
400
600
800
1000
1200
V
VFR
0 200 400 600
0.0
0.2
0.4
0.6
0.8
1.0
-diF/dt
trr
typ.
max.
0 40 80 120 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Kf
QR
IRM
°C
TJ
0 200 400 600
0
10
20
30
40
50
A
max.
typ.
1 10 100 1000
0
1
2
3
4
5
6
µC
IRM
-diF/dt
Qr
01234
0
10
20
30
40
50
60
70
V
VF
IF
TVJ=150°C
TVJ=100°C
TVJ=25°C
A
IF=15A
IF=30A
IF=60A
IF=30A
VR= 540V
TVJ=100°C
max.
typ.
IF=15A
IF=30A
IF=60A
IF=30A
TVJ=100°C
VR= 540V
VR=540V
TVJ=100°C
IF=15A
IF=30A
IF=60A
IF=30A
µs
A/µs -diF/dt A/µs
A/µs A/µs
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08
Dimensions
miniBLOC SOT-227 B
M4 screws (4x) supplied
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