© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C - 65 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 65 V
VGSS Continuous ±15 V
VGSM Transient ±25 V
ID25 TC= 25°C - 120 A
IDM TC= 25°C, Pulse Width Limited by TJM - 360 A
IATC= 25°C - 60 A
EAS TC= 25°C1J
PDTC= 25°C 298 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-247 6.0 g
DS100026A(11/10)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250μA - 65 V
VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V
IGSS VGS = ± 15V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS = 0V - 10 μA
TJ = 125°C - 750 μA
RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 10 mΩ
TrenchPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTA120P065T
IXTP120P065T
IXTH120P065T
VDSS = - 65V
ID25 = - 120A
RDS(on) ≤≤
≤≤
≤ 10mΩΩ
ΩΩ
Ω
Features
zInternational Standard Packages
z Avalanche Rated
zExtended FBSOA
zFast Intrinsic Diode
z Low RDS(ON) and QG
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switching
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
zBattery Charger Applications
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXTH)
G
S
DD (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
GDS
TO-220AB (IXTP)
D (Tab)
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTA120P065T IXTH120P065T
IXTP120P065T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = 0.5 • ID25, Note 1 45 75 S
Ciss 13.2 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 1345 pF
Crss 505 pF
td(on) 31 ns
tr 28 ns
td(off) 38 ns
tf 21 ns
Qg(on) 185 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 55 nC
Qgd 58 nC
RthJC 0.42 °C/W
RthCS (TO-220) 0.50 °C/W
(TO-247) 0.21 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V - 120 A
ISM Repetitive, Pulse Width Limited by TJM - 480 A
VSD IF = - 60A, VGS = 0V, Note 1 -1.3 V
trr 53 ns
QRM 77 nC
IRM - 2.9 A
Resistive Switching Times
VGS = -10V, VDS = - 33V, ID = - 50A
RG = 1Ω (External)
IF = - 60A, -di/dt = -100A/μs
VR = - 33V, VGS = 0V
TO-263 Outline
TO-247 Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 Outline
1 = Gate
2 = Drain
3 = Source
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA120P065T IXTH120P065T
IXTP120P065T
Fi g . 1. Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
-120
-100
-80
-60
-40
-20
0
-1.4-1.2-1-0.8-0.6-0.4-0.20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 5
V
- 6
V
- 7
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
-350
-300
-250
-200
-150
-100
-50
0
-20-18-16-14-12-10-8-6-4-20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 5
V
- 6
V
- 7
V
- 8
V
- 9
V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ T
J
= 125ºC
-120
-100
-80
-60
-40
-20
0
-2-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20
V
DS
- Volts
I
D
- Amperes
V
GS
= -10V
- 9V
- 8V
- 6V
- 5V
- 7V
Fig. 4. R
DS(on)
Normalized to I
D
= - 60A vs.
Junction Tem perature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= -10V
I
D
= -120A
I
D
= - 60A
Fig. 5. R
DS(on)
Normalized to I
D
= - 60A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
-360-300-240-180-120-600
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= -10V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 6. Maximu m D r ai n C u r r en t vs.
Case Temper atu r e
-140
-120
-100
-80
-60
-40
-20
0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTA120P065T IXTH120P065T
IXTP120P065T
Fig. 7. Input Admittance
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
VGS - Volts
ID - Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
-180-160-140-120-100-80-60-40-200
ID - Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-300
-250
-200
-150
-100
-50
0
-1.5-1.4-1.3-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4
VSD - Volts
IS - Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 20 40 60 80 100 120 140 160 180 200
QG - NanoCoulombs
VGS - Volts
V
DS
= - 33V
I
D
= - 60A
I
G
= -1mA
Fig. 11. Capacitan ce
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
VDS - Volts
Capacitance - PicoFarads
f
= 1 MH
z
Ciss
Crss
Coss
Fi g . 12 . Fo r w ar d -B i as S afe Op er at ing Ar ea
1
10
100
1,000
110100
VDS - Volts
ID - Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms 100µs
R
DS(on)
Limit
10ms
-
-
-
---
DC, 100ms
-
External Lead
Current Limit
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA120P065T IXTH120P065T
IXTP120P065T
Fi g . 14. R esi sti ve Turn -o n R i se Time vs.
Drain Current
16
18
20
22
24
26
28
30
32
-50-46-42-38-34-30-26
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 33V
T
J
= 25ºC
T
J
= 125ºC
Fi g . 15. R esi sti ve Tu rn -o n Swi tch i n g Times vs .
Gate Resi stance
0
20
40
60
80
100
120
140
160
180
024681012141618
R
G
- Ohms
t
r
- Nanoseconds
0
10
20
30
40
50
60
70
80
90
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 33V I
D
= - 50A, - 25A
Fig . 16. Resi st i ve Tu r n-off Swi t ch in g Times vs.
Jun cti o n Temp erat u r e
18
19
20
21
22
23
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
35
40
45
50
55
60
65
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 33V
I
D
= - 25A
I
D
= - 50A
Fi g . 17. R esi sti ve Turn -o ff Switc h ing Times vs.
Drain Current
34
38
42
46
50
54
58
62
-50-46-42-38-34-30-26
I
D
- Amperes
t
f
- Nanoseconds
18
19
20
21
22
23
24
25
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= - 10V
V
DS
= - 33V
T
J
= 25ºC
T
J
= 25ºC
T
J
= 125ºC
T
J
= 125ºC
Fi g . 13. R esi sti ve Turn -o n R i se Time vs.
Junction T emperature
12
16
20
24
28
32
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 33V
I
D
= -50A
I
D
= - 25A
Fi g . 18. R esi sti ve Tur n -o f f Swit chin g Times vs.
Gate Resi sta n ce
0
20
40
60
80
100
120
140
160
180
200
0 2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
f
- Nanoseconds
0
30
60
90
120
150
180
210
240
270
300
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 33V
I
D
= - 50A
I
D
= - 25A
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXTA120P065T IXTH120P065T
IXTP120P065T
IXYS REF: T_120P065T(A6)11-08-10-A
Fig. 19. Maximum Transient T herm al Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
