1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
Rev. 1 — 1 August 2011 Product data sheet
SOT323
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-so urce voltage Tj=25°C ---30V
VGS gate-source voltage -8 - 8 V
IDdrain current VGS =-4.5V; T
amb =25°C [1] ---200mA
Static characteristics
RDSon drain-source on-state
resistance VGS =-4.5V; I
D=-200mA;
Tj=25°C -2.84.1Ω
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Product data sheet Rev. 1 — 1 August 2011 2 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] % = placeholder for manufacturing site code
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic sym bol
1 G gate
SOT323 (SC-70)
2Ssource
3 D drain
12
3
017aaa259
G
D
S
Ta ble 3. Ordering informatio n
Type number Package
Name Description Version
NX3008PBKW SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codes
Type number Marking code[1]
NX3008PBKW AB%
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Product data sheet Rev. 1 — 1 August 2011 3 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj=25°C - -30 V
VGS gate-source voltage -8 8 V
IDdrain current VGS =-4.5V; T
amb =25°C [1] - -200 mA
VGS =-4.5V; T
amb =100°C [1] - -130 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - -0.8 A
Ptot total power dissipation Tamb =25°C [2] - 260 mW
[1] - 310 mW
Tsp = 25 °C - 830 mW
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
ISsource current Tamb =25°C [1] - -200 mA
ESD maximum rating
VESD electrostatic discharge voltage HBM [3] - 2000 V
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Product data sheet Rev. 1 — 1 August 2011 4 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
Fig 1. Normalized total power dissipation as a
function of junction temp era tu re Fig 2. Normalized continuo us drain current as a
function of junction temp erat ure
IDM is a single pulse
(1) tp = 1 ms
(2) tp = 10 ms
(3) tp = 100 ms
(4) DC; Tsp = 25 °C
(5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
Tj (°C)
-75 17512525 75-25
001aao121
40
80
120
Pder
(%)
0
Tj (°C)
-75 17512525 75-25
001aao122
40
80
120
Ider
(%)
0
001aao248
VDS (V)
-10-1 -102
-10-1
-1
-10-1
-10
lD
(A)
-10-2
(1)
(2)
(3)
(4)
(5)
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Product data sheet Rev. 1 — 1 August 2011 5 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction to ambient in free air [1] - 415 480 K/W
[2] - 350 400 K/W
Rth(j-sp) thermal resistance from juncti on to solder point - - 150 K/W
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa028
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
017aaa029
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
NX3008PBKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 1 August 2011 6 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage ID=-250µA; V
GS =0V; T
j=25°C -30--V
VGSth gate-source threshold
voltage ID=-250µA; V
DS =V
GS; Tj= 25 °C -0.6 -0.9 -1.1 V
IDSS drain leakage current VDS =-30V; V
GS =0V; T
j= 150 °C - - -10 µA
VDS =-30V; V
GS =0V; T
j=25°C ---1µA
IGSS gate leakage current VGS =8V; V
DS =0V; T
j= 25 °C - -0.2 -1 µA
VGS =-8V; V
DS =0V; T
j= 25 °C - -0.2 -1 µA
VGS =4.5V; V
DS =0V; T
j=25°C - -10 - nA
VGS =-4.5V; V
DS =0V; T
j=25°C - -10 - nA
VGS =2.5V; V
DS =0V; T
j=25°C - -1 - nA
VGS =-2.5V; V
DS =0V; T
j=25°C - -1 - nA
RDSon drain-source on-state
resistance VGS =-4.5V; I
D= -200 mA; Tj=25°C - 2.8 4.1 Ω
VGS =-4.5V; I
D= -200 mA; Tj= 150 °C - 5.3 7.8 Ω
VGS =-2.5V; I
D=-10mA; T
j=25°C - 5.3 6.5 Ω
gfs forward
transconductance VDS =-10V; I
D= -200 mA; Tj= 25 °C - 160 - mS
Dynamic character istics
QG(tot) total gate charge VDS =-15V; I
D= -200 mA;
VGS =-4.5V; T
j=25°C - 0.55 0.72 nC
QGS gate-source charge - 0.23 - nC
QGD gate-drain charge - 0.09 - nC
Ciss input capacitance VDS = -15 V; f = 1 MHz; VGS =0V;
Tj=25°C - 3146pF
Coss output capacitance - 6.5 - pF
Crss reverse transfer
capacitance -2.3-pF
td(on) turn-on delay time VDS =-20V; R
L= 250 Ω; VGS =-4.5V;
RG(ext) =6Ω; Tj=25°C - 1938ns
trrise time - 30 - ns
td(off) turn-off delay time - 65 130 ns
tffall time - 38 - ns
Source-drain diode
VSD source-drain voltage IS= -200 mA; VGS =0V; T
j= 25 °C -0.47 -0.88 -1.2 V
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Product data sheet Rev. 1 — 1 August 2011 7 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
Tj = 25 °C Tj = 25 °C; VDS = -5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Outp ut characteristics: dra in current as a
function of drain-source voltage; typical values Fig 7. Su b-threshold drain current as a fun ction of
gate-source voltage
Tj = 25 °C
(1) VGS = -1.75 V
(2) VGS = -2.0 V
(3) VGS = -2.25 V
(4) VGS = -2.5 V
(5) VGS = -3.0 V
(6) VGS = -4.5 V
ID = -200 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values Fig 9. Drain-source on-state resistance as a fun ction
of gate-source voltage; typical values
VDS (V)
0-4-3-1 -2
001aao256
-0.10
-0.15
-0.05
-0.20
-0.25
ID
(A)
0.00
-2 V
-2.5 V
VGS = -1.5 V
-4.5 V -3 V
001aao257
VGS (V)
0.0 -1.5-1.0-0.5
-10-4
-10-5
-10-3
ID
(A)
-10-6
(2)(1) (3)
ID (A)
0 -0.25-0.20-0.10 -0.15-0.05
001aao258
14
RDS (on)
(Ω)
10
6
2
0
4
8
12
(1) (2) (3)
(5)
(6)
(4)
VGS (A)
0-5-4-2 -3-1
001aao259
14
RDS (on)
(Ω)
10
6
2
0
4
8
12
(1)
(2)
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Product data sheet Rev. 1 — 1 August 2011 8 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain curre nt as a
function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as
a function of junctio n temperature; typical
values
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; VGS = 0 V
(1)Ciss
(2)Coss
(3)Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
001aao260
VGS (V)
0-3-2-1
-0.10
-0.15
-0.05
-0.20
-0.25
ID
(A)
0.00
(2)(1)
Tj (˚C)
-60 180120060
001aao261
1.0
0.5
1.5
2.0
a
0.0
Tj (˚C)
-60 180120060
001aao262
-0.5
-1.0
-1.5
VGS(th)
(V)
0.0
(1)
(2)
(3)
001aao263
VDS (V)
-10-1 -102
-10-1
10
102
C
(pF)
1
(1)
(2)
(3)
NX3008PBKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 1 August 2011 9 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
ID = -200 mA; VDS = -15 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values Fig 15. Gate charge waveform definitions
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
001aao264
-2
-3
-1
-4
-5
VGS
(V)
0
QG (nC)
0.0 0.2 0.4 0.6 0.70.50.30.1
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
001aao265
VSD (V)
0.0 -1.2-0.8-0.4
-0.10
-0.15
-0.05
-0.20
-0.25
IS
(A)
0.00
(1) (2)
NX3008PBKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 1 August 2011 10 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 17. Duty cycle definitio n
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
NX3008PBKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 1 August 2011 11 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
9. Package outline
Fig 18. Package outline SOT323 (SC-70)
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Product data sheet Rev. 1 — 1 August 2011 12 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
10. Soldering
Fig 19. Reflow soldering footprint for SOT323 (SC-70)
Fig 20. Wave soldering footprint for SOT323 (SC-70)
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
sot323_fw
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
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Product data sheet Rev. 1 — 1 August 2011 13 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
11. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
NX3008PBKW v.1 20110801 Product data sheet - -
NX3008PBKW All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 1 August 2011 14 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MO SF ET
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) de scribed in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modificati ons or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of informati on included herein and shall have
no liability for the consequences of use of such info rmation.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specifi ca t ion — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond tho se described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersed es an d r eplaces all inf ormation supplied pri or
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, lif e-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applicati ons or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Document status [1] [2] Product status [3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
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Product data sheet Rev. 1 — 1 August 2011 15 of 16
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MO SF ET
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document ma y be interpret ed or
construed as an of fer to sell product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
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Export control — This document as well as the item(s) d escribed herein may
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12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors NX3008PBKW
30 V, 200 mA P-channel Trench MO SF ET
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 August 2011
Document identifier: NX30 08PBKW
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .10
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . .10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .11
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .13
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .14
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .14
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .15
13 Contact information. . . . . . . . . . . . . . . . . . . . . .15