APT20N60BC3 APT20N60SC3 600V 20.7A 0.190 Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors * Ultra low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Avalanche Energy Rated * TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol VDSS ID D G S All Ratings: TC = 25C unless otherwise specified. Parameter APT17N80BC3_SC3 UNIT 600 Volts Drain-Source Voltage 20.7 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 20 VGSM Gate-Source Voltage Transient 30 Total Power Dissipation @ TC = 25C 208 Watts Linear Derating Factor 1.67 W/C PD TJ,TSTG TL dv/ dt 62 Operating and Storage Junction Temperature Range -55 to 150 C Lead Temperature: 0.063" from Case for 10 Sec. 260 Drain-Source Voltage slope (VDS = 480V, ID = 20.7A, TJ = 125C) 50 V/ns 20 Amps IAR Repetitive Avalanche Current 7 EAR Repetitive Avalanche Energy 7 EAS Volts Single Pulse Avalanche Energy 1 4 mJ 690 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 13.1A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) TYP 0.16 0.19 0.05 25 250 Gate-Source Leakage Current (VGS = 20V, VDS = 0V) 2.1 UNIT Volts Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150C) Gate Threshold Voltage (VDS = VGS, ID = 1mA) MAX 3 Ohms A 100 nA 3.9 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG" 4-2004 Characteristic / Test Conditions 050-7145 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol APT20N60B_SC3 Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 860 Crss Reverse Transfer Capacitance f = 1 MHz 50 VGS = 10V 90 VDD = 300V 13 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) ID = 20.7A @ 25C tf Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 5 INDUCTIVE SWITCHING @ 25C 6 180 VDD = 400V, VGS = 15V 6 ns 65 RG = 3.6 Fall Time nC 5 VDD = 380V ID = 20.7A @ 25C Turn-off Delay Time 114 10 VGS = 15V Rise Time td(off) pF 45 RESISTIVE SWITCHING Turn-on Delay Time tr UNIT 2440 VGS = 0V 3 MAX ID = 20.7A, RG = 5 120 INDUCTIVE SWITCHING @ 125C 320 VDD = 400V VGS = 15V ID = 20.7A, RG = 5 J 135 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions TYP 20.7 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr MAX 62 (Body Diode) UNIT Amps 1 1.2 Volts Reverse Recovery Time (IS = -20.7A, dl S/dt = 100A/s, VR = 480V) 500 800 ns Q rr Reverse Recovery Charge (IS = -20.7A, dl S/dt = 100A/s, VR = 480V) 11 dv/ Peak Diode Recovery dt dv/ (VGS = 0V, IS = - 20.7A) dt C 6 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP 0.60 62 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 13.80mH, RG = 25, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID20.7A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f 0.9 0.50 0.7 0.40 0.5 0.30 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7145 Rev D 4-2004 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.70 0.60 0.3 0.20 t1 t2 0.10 0 0.1 SINGLE PULSE 0.05 10-5 10-4 C/W Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT20N60B_SC3 60 RC MODEL Junction temp. ( "C) 0.259 0.00500 0.341 0.135 Power (watts) Case temperature ID, DRAIN CURRENT (AMPERES) VGS =15 & 10V 6.5V 50 6V 40 5.5V 30 20 5V 10 4.5V 4V 0 40 30 TJ = -55C TJ = +25C 20 10 0 TJ = +125C 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 20 15 10 5 0 25 I D V 2.5 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 GS 5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 1.2 = 11.9A = 10V 2.0 1.5 1.0 0.5 0 -50 1.20 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE NORMALIZED TO = 10V @ 11.9A GS 1.30 1.15 25 3.0 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 4-2004 50 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 050-7145 Rev D ID, DRAIN CURRENT (AMPERES) 60 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 Typical Performance Curves 10,000 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 I 12 VDS= 120V VDS= 300V 8 Coss 100 VDS= 480V 4 0 0 Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 10mS = 20.7A D 1,000 1mS TC =+25C TJ =+150C SINGLE PULSE 0.6 Ciss C, CAPACITANCE (pF) 100S 10 1 APT20N60B_SC3 20,000 OPERATION HERE LIMITED BY RDS (ON) 20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 10 IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 62 200 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 50 100 V 90 70 V 60 DD R G J L = 100H 40 0 20 0 5 0 15 20 25 30 35 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 10 0 15 20 25 30 35 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 700 V DD R G 500 = 5 EON includes diode reverse recovery. Eoff 300 200 Eon 100 SWITCHING ENERGY (J) J 400 I 600 T = 125C 5 V = 400V L = 100H 0 tr 10 600 SWITCHING ENERGY (J) 30 td(on) 10 4-2004 tf 30 20 050-7145 Rev D J L = 100H = 400V = 5 T = 125C 50 = 5 T = 125C 40 tr and tf (ns) td(on) and td(off) (ns) G td(off) 80 = 400V DD R DD D 10 = 400V = 20.7A Eoff T = 125C J L = 100H EON includes 500 diode reverse recovery. 400 Eon 300 200 100 0 5 10 15 20 25 30 35 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT20N60B_SC3 10% 90% Gate Voltage TJ = 125 C td(on) td(off) tr 90% 5% Collector Current 10% Gate Voltage tf TJ = 125 C Collector Voltage 90% 5% 0 Collector Voltage 10% Collector Current Switching Energy Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT15DF60B V CE IC V DD G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Drain Source 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7145 Rev D 0.46 (.018) 0.56 (.022) {3 Plcs} 4-2004 3.50 (.138) 3.81 (.150)