1
TO-220F
Item Symbol Ratings Unit Remarks
Drain-source voltage VDS 120
VDSX 90
Continuous Drain Current ID26
Pulsed Drain Current ID(puls] ±104
Gate-Source Voltage VGS ±30
Maximum Avalanche current IAR 26
Non-Repetitive EAS 342.2
Maximum Avalanche Energy
Repetitive EAR 3.7
Maximum Avalanche Energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt 5
Max. Power Dissipation PD37
2.16
Operating and Storage Tch +150
Temperature range Tstg
Isolation Voltage VISO 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
2SK3770-01MR
FUJI POWER MOSFET
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero Gate Voltage Drain Current IDSS VDS=120V VGS=0V
VDS=96V VGS=0V
VGS=±30V
ID=13A VGS=10V
ID=13A VDS=25V
VCC=48V
ID=13A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
µA
nA
mΩ
S
pF
nC
V
ns
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 3.378
58 °C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VSD
trr
Qrr
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time ton
Turn-Off Time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MH
VCC=60V
ID=26A
VGS=10V
IF=26A V GS=0V Tch=25°C
IF=26A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
120
3.0 5.0
25
250
100
63 78
612
760 1140
170 255
11 17
13 20
5 7.5
20 30
7.5 11
26 39
12 18
711
1.00 1.50
130
0.7
-55 to +150
Outline Drawings (mm)
www.fujielectric.co.jp/fdt/scd
Super F AP-G Series
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
200407
VGS=-30V
Note *1
Note *2
Note *3
VDS 120V
Note *4
Tc=25°C
Ta=25°C
t=60sec. f=60Hz
=
<
Features
High speed switching Low on-resistance
No secondary breakdown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,IAS=11A,L=3.77mH,
VCC=48V,RG=50Ω
EAS limited by maximum channel temperature
and Avalanche current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
Note *4:IF -ID, -di/dt = 50A/µs,VCC BVDSS,Tch 150°C
=
<=
<=
<
=
<
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2
Characteristics
2SK3770-01MR FUJI POWER MOSFET
0 25 50 75 100 125 150
0
10
20
30
40
50
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
0123456
0
10
20
30
40
50
60
6.0V
7.0V
7.5V
20V
10V
8.0V
6.5V
VGS=5.5V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VG S):80 µs pulse test,VDS=25V,Tch=25 °C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f( ID ) :80 µs pulse test,VDS=25V,Tch=25°C
0 102030405060
0.04
0.08
0.12
0.16
0.20
0.24
7.5V
6.0V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
10V
20V
8.0V
7.0V
6.5V
VGS=5.5V
-50 -25 0 25 50 75 100 125 150
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
RDS(o n) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=13A,VGS=10V
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3
2SK3770-01MR FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C] 0 5 10 15 20 25 30 35 40
0
2
4
6
8
10
12
14
Vcc=60V
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=26A,Tch=25 °C
VGS [V]
100101102
101
102
103
C [pF ]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
10-1 100101102
100
101
102
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
IAS=11A
IAS=16A
IAS=26A
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. s tarting Tc h
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=26A
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4
2SK3770-01MR FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
Avalanche Current I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
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