Product Datasheet Search Results:

2N6341.pdf5 Pages, 396 KB, Original
2N6341
Advanced Semiconductor, Inc.
Silicon Transistor Selection Guide
2N6341.pdf1 Pages, 54 KB, Scan
2N6341
Api Electronics Group
25 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-3
2N6341.pdf1 Pages, 113 KB, Original
2N6341.pdf3 Pages, 134 KB, Original
2N6341
Boca Semiconductor
HIGH-POWER NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200
2N6341.pdf1 Pages, 74 KB, Original
2N6341.pdf1 Pages, 69 KB, Scan
2N6341
Silicon Transistor Corp.
Low Frequency Silicon Power Transistor

Product Details Search Results:

Apitech.com/2N6341
{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"150 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"30 MHz","Collector Current-Max (IC)":"25 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","N...
1233 Bytes - 07:52:52, 01 November 2024
Dla.mil/2N6341+JAN
{"t(s) Max. (s) Storage time.":"1.0u","V(CE)sat Max.(V)":"1.8","Absolute Max. Power Diss. (W)":"200","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"30","V(BR)CBO (V)":"180","I(C) Abs.(A) Collector Current":"25","h(FE) Max. Current gain.":"120","@V(CBO) (V) (Test Condition)":"150","I(CBO) Max. (A)":"10u","@Freq. (Hz) (Test Condition)":"100k","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"40M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"2.5","V(BR)CEO (V)":"150",...
1189 Bytes - 07:52:52, 01 November 2024
Dla.mil/2N6341+JANTX
{"t(s) Max. (s) Storage time.":"1.0u","V(CE)sat Max.(V)":"1.8","Absolute Max. Power Diss. (W)":"200","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"30","V(BR)CBO (V)":"180","I(C) Abs.(A) Collector Current":"25","h(FE) Max. Current gain.":"120","@V(CBO) (V) (Test Condition)":"150","I(CBO) Max. (A)":"10u","@Freq. (Hz) (Test Condition)":"100k","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"40M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"2.5","V(BR)CEO (V)":"150",...
1201 Bytes - 07:52:52, 01 November 2024
Dla.mil/2N6341+JANTXV
{"t(s) Max. (s) Storage time.":"1.0u","V(CE)sat Max.(V)":"1.8","Absolute Max. Power Diss. (W)":"200","@V(CB) (V) (Test Condition)":"10","h(FE) Min. Static Current Gain":"30","V(BR)CBO (V)":"180","I(C) Abs.(A) Collector Current":"25","h(FE) Max. Current gain.":"120","@V(CBO) (V) (Test Condition)":"150","I(CBO) Max. (A)":"10u","@Freq. (Hz) (Test Condition)":"100k","Package":"TO-3","f(T) Min. (Hz) Transition Freq":"40M","@V(CE) (V) (Test Condition)":"10","@I(B) (A) (Test Condition)":"2.5","V(BR)CEO (V)":"150",...
1206 Bytes - 07:52:52, 01 November 2024
Microsemi.com/2N6341
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-3, 2 PIN","Terminal Form":"PIN/PEG","Power Dissipation Ambient-Max":"200 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"12","Collector-emitter Voltage-Max":"150 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"25 A","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"ROUND","Configuration":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER...
1232 Bytes - 07:52:52, 01 November 2024
Microsemi.com/JAN2N6341
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"150 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Number of Elements":"...
1198 Bytes - 07:52:52, 01 November 2024
Microsemi.com/JANTX2N6341
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"25A","Transistor Type":"NPN","Frequency - Transition":"-","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.8V @ 2.5A, 25A","Series":"Military, MIL-PRF-19500/509","Package / Case":"TO-204AA, TO-3","Voltage - Collector Emitter Breakdown (Max)":"150V","Power - Max":"200W","Packaging":"Bulk","Datasheets":"2N6338, 2N6341","Current - Collector Cutoff (Max)":"10\u00b5A","Supplier Device Package":"TO-3 (TO-204AA)...
1496 Bytes - 07:52:52, 01 November 2024
Microsemi.com/JANTXV2N6341
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Transistor Polarity":"NPN","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"30","Collector-emitter Voltage-Max":"150 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"10 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"ROUND","Configuration":"SINGLE","Number of Terminals":"2","Number of Elements":"...
1215 Bytes - 07:52:52, 01 November 2024
Multicomp.com.au/2N6341
{"Collector Emitter Voltage V(br)ceo:":"150 V","Transistor Polarity:":"NPN","MSL:":"-","No. of Pins:":"2","DC Collector Current:":"25 A","Power Dissipation Pd:":"200 W","Transistor Case Style:":"TO-3","Operating Temperature Max:":"200 \u00b0C","DC Current Gain hFE:":"120","Operating Temperature Min:":"-65 \u00b0C","SVHC:":"To Be Advised","Transition Frequency Typ ft:":"40 MHz"}...
1393 Bytes - 07:52:52, 01 November 2024
N_a/2N6341
{"Category":"NPN Transistor, Transistor","Amps":"25A","MHz":">40 MHz","Volts":"180V"}...
517 Bytes - 07:52:52, 01 November 2024
Onsemi.com/2N6341
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"25A","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 10A, 2V","Transistor Type":"NPN","Product Photos":"TO-3 Pkg","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.8V @ 2.5A, 25A","Current - Collector Cutoff (Max)":"50\u00b5A","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"150V","Supplier Device Package":"TO-3","Packaging":"Tray","Datasheets":"2N6338,41","Power - Max":"2...
1525 Bytes - 07:52:52, 01 November 2024
Onsemi.com/2N6341G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"25A","Frequency - Transition":"40MHz","Transistor Type":"NPN","Product Photos":"TO-3 Pkg","Family":"Transistors (BJT) - Single","Vce Saturation (Max) @ Ib, Ic":"1.8V @ 2.5A, 25A","Series":"-","Package / Case":"TO-204AA, TO-3","Voltage - Collector Emitter Breakdown (Max)":"150V","Power - Max":"200W","Packaging":"Tray","Datasheets":"2N6338,41","Current - Collector Cutoff (Max)":"50\u00b5A","Supplier Device Package":"TO-3","Standar...
1644 Bytes - 07:52:52, 01 November 2024

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